Photomultiplication in Disordered Unipolar Organic Materials

Photomultiplication in conventional inorganic semiconductors has been known and used for decades, the underlying mechanism being multiplication by impact ionization triggered by hot carriers. Since neither carrier heating by an electric field nor avalanche multiplication are possible in strongly disordered organic solids, charge multiplication seems to be highly unlikely in these materials. However, here the photomultiplication observed in the bulk of a unipolar disordered organic semiconductor is reported. The proportion of extracted carriers to incident photons is experimentally determined to be in excess of 3000 % in a single‐layer device of the air‐stable, n‐type organic semiconductor F₁₆CuPc (Pc: phthalocyanine). This effect is explained in terms of exciton quenching by localized charges, the subsequent promotion of these detrapped charges to the high‐mobility energy band of the density‐of‐states (DOS) distribution, and subsequent slow equilibration within this broad intrinsic DOS. Such a mechanism allows multiple replenishment of the optically released charge by mobile carriers injected from an Ohmic electrode. Also shown is photomultiplication in double‐layer devices composed of layers of donor and acceptor small‐molecule materials. This result implies that, apart from exciton dissociation at a donor/acceptor interface, exciton energy transfer to trapped carriers is a complementary photoconductivity process in organic solar cells. This new insight paves the way to cheap, highly efficient organic photodetectors on flexible substrates for numerous applications.     

薄膜晶体硅太阳能电池的潜力

如果效率和成本目标能够实现，薄膜晶体硅太阳能电池有潜力替代目前在光伏市场上占主导地位的多晶硅太阳能电池。     

Overview of solar cell technologies and results on high efficiency multicrystalline silicon substrates

Fabrication technologies for multicrystalline silicon (mc-Si) solar cells have advanced in recent years with efficiencies of mc-Si cells exceeding 18%. Intense efforts have been made at laboratory level to improve process technology, growth methods, and material improvement techniques to deliver better devices at lower cost. Deeper understanding of the physics and optics of the device led to improved device design. This provided a fruitful feedback to the industrial sector. Both screenprinting and buried-contact technologies yield cells of high performance. An increasingly large amount of research activity is also focussed on the fabrication of thin solar cells on cheap substrates such as glass, ceramic, or low quality silicon. Success of these efforts is expected to lead to high efficiency devices at much lower costs. Efforts are also being put on low thermal budget processing of solar cells based on rapid thermal annealing.     

Porous silicon as an intermediate layer for thin-film solar cell

The potential of porous silicon (PS) with dual porosity structure as an intermediate layer for ultra-thin film solar cells is described. It is shown that a double-layered PS with a porosity of % allows to grow epitaxial Si film at medium temperature (725°–800°C) and at the same time serves as a gettering/diffusion barrier for impurities from potentially contaminated low-cost substrate. A 3.5 μm thin-film cell with reasonable efficiency is realized using such a PS intermediate layer.     

Fabrication of textured alumina by orienting template particles during electrophoretic deposition

(0 0 1)-Textured α-alumina has been processed by electrophoretic deposition (EPD) and templated grain growth. The mechanism of platelet template orientation during EPD was examined with respect to the impact of the electric field force, gravity and hydrodynamic force in two different deposition cells with vertically or horizontally positioned deposition electrodes. A sharp (0 0 1) ‘fibre texture’ was obtained after templated grain growth during sintering of a deposit formed from a stirred 5 vol% platelet containing suspension in a vertical deposition cell. The texture was characterized by means of the Lotgering factor, texture index and electron backscattering diffraction (EBSD).     

含氧化锆的氧化物系统计算相图研究与进展

氧化锆是一种重要的高性能陶瓷材料，由于其优良的力学和电学性能。在结构陶瓷和功能陶瓷两个都有着广泛的应用前景，本文在简述计算相图发展和原理的基础上，综述了近年来对含氧化锆系统计算相图的研究，总结了一些重要体系的研究结果，提出计算相图方法将对该系统材料的组分设计起重大的促进作用。     

Discovery of an Acyclic Nucleoside Phosphonate that Inhibits Mycobacterium tuberculosis ThyX Based on the Binding Mode of a 5‐Alkynyl Substrate Analogue

The urgent need for new antibiotics poses a challenge to target un(der)exploited vital cellular processes. Thymidylate biosynthesis is one such process due to its crucial role in DNA replication and repair. Thymidylate synthases (TS) catalyze a crucial step in the biosynthesis of thymidine 5‐triphosphate (TTP), an elementary building block required for DNA synthesis and repair. To date, TS inhibitors have only been successfully applied in anticancer therapy due to their lack of specificity for antimicrobial versus human enzymes. However, the discovery of a new family of TS enzymes (ThyX) in a range of pathogenic bacteria that is structurally and biochemically different from the “classic” TS (ThyA) has opened the possibility to develop selective ThyX inhibitors as potent antimicrobial drugs. Here, the interaction of the known inhibitor 5‐(3‐octanamidoprop‐1yn‐1yl)‐2′‐deoxyuridine‐5′‐monophosphate ( 1 ) with Mycobacterium tuberculosis ThyX enzyme is explored using molecular modeling starting from published crystal structures, with further confirmation through NMR experiments. While the deoxyuridylate (dUMP) moiety of compound 1 occupies the cavity of the natural substrate in ThyX, the rest of the ligand (the “5‐alkynyl tail”) extends to the outside of the enzyme between two of its four subunits. The hydrophobic pocket that accommodates the alkyl part of the tail is formed by displacement of Tyr 44.C, Tyr 108.A and Lys 165.A. Changes to the resonance of the Lys 165 NH₃ group upon ligand binding were monitored in a titration experiment by 2D HISQC NMR. Guided by the results of the modeling and NMR studies, and inspired by the success of acyclic antiviral nucleosides, compounds where a 5‐alkynyl uracyl moiety is coupled to an acyclic nucleoside phosphonate (ANP) were synthesized and evaluated. Of the compounds evaluated, sodium (6‐(5‐(3‐octanamidoprop‐1‐yn‐1‐yl)‐2,4‐dioxo‐3,4‐dihydropyrimidin‐1(2H)‐yl)hexyl)phosphonate ( 3 e ) exhibited 43 % of inhibitory effect on ThyX at 50 μM . While only modest activity was achieved, this is the first example of an ANP inhibiting ThyX, and these results can be used to further guide structural modifications to this class to develop more potent compounds with potential application as antibacterial agents acting through a novel mechanism of action.     

液相包覆制备Ce-TZP陶瓷的力学性能与稳定行为

采用XRD、SEM、TEM等分析手段对由液相包覆工艺制备的Ce—TZP陶瓷的微结构进行了研究，并和共沉淀粉体制备的Ce—TZP陶瓷进行了对比分析．力学性能表明，同共沉淀粉体制备的Ce—TZP陶瓷相比，由液相包覆工艺制备的Ce—TZP陶瓷虽硬度下降，但断裂韧性改善；液相添加少量Al2O3硬度随之增加、断裂韧性显著提高．电镜分析表明，液相包覆工艺制备的Ce—TZP陶瓷晶粒尺寸分布宽化，一部分晶粒尺寸较大但CeO2含量低、易发生马氏体相转变晶粒的存在是断裂韧性改善的主要原因．陶瓷体中单斜相大晶粒与四方相之间的残余应力、添加少量Al2O3在晶界上易形成薄的非晶包裹层，是增加可相变四方相数量，提高断裂韧性的其它机制。     

Large‐area epitaxial silicon solar cells based on industrial screen‐printing processes

Thin‐film epitaxial silicon solar cells are an attractive future alternative for bulk silicon solar cells incorporating many of the process advantages of the latter, but on a potentially cheap substrate. Several challenges have to be tackled before this potential can be successfully exploited on a large scale. This paper describes the points of interest and how IMEC aims to solve them. It presents a new step forward towards our final objective: the development of an industrial cell process based on screen‐printing for > 15% efficient epitaxial silicon solar cells on a low‐cost substrate. Included in the discussion are the substrates onto which the epitaxial deposition is done and how work is progressing in several research institutes and universities on the topic of a high‐throughput epitaxial reactor. The industrial screen‐printing process sequence developed at IMEC for these epitaxial silicon solar cells is presented, with emphasis on plasma texturing and improvement of the quality of the epitaxial layer. Efficiencies between 12 and 13% are presented for large‐area (98 cm²) epitaxial layers on highly doped UMG‐Si, off‐spec and reclaim material. Finally, the need for an internal reflection scheme is explained. A realistically achievable internal reflection at the epi/substrate interface of 70% will result in a calculated increase of 3 mA/cm² in short‐circuit current. An interfacial stack of porous silicon layers (Bragg reflectors) is chosen as a promising candidate and the challenges facing its incorporation between the epitaxial layer and the substrate are presented. Experimental work on this topic is reported and concentrates on the extraction of the internal reflection at the epi/substrate interface from reflectance measurements. Initial results show an internal reflectance between 30 and 60% with a four‐layer porous silicon stack. Resistance measurements for majority carrier flow through these porous silicon stacks are also included and show that no resistance increase is measurable for stacks up to four layers. Copyright © 2005 John Wiley & Sons, Ltd.