五步创造有效的规划

<正> 对一个团队和组织来说,创造一个有效的规划是最具挑战性的任务之一。规划在这里不是指几个简单的句子,而是一种对未来状态的彻底的清晰认识,它包括对价值观、步骤、结构、技术、工作角色和环境的明确认识。但问题是:需要采取什么样的步骤才能为自己的组织创造一个有效和可行的规划呢?本文介绍的模块提供了一些基本的步骤,它们能大大提高创造一个有效的规划的可能性。     

News: White House panel creating database of endocrine disrupter-related research

Science.     

Global Interoperability Using Semantics, Standards, Science and Technology (GIST)

“Global Interoperability Using Semantics, Standards, Science and Technology” is a concept that is predicated on the assumption that the semantic integration, frameworks and standards that support information exchange, and advances in science and technology can enable information-systems interoperability for many diverse users. This paper recommends technologies and approaches for enabling interoperability across a wide spectrum of political, geographical, and organizational levels, e.g. coalition, federal, state, tribal, regional, non government, and private. These recommendations represent steps toward the goal of the Semantic Web, where computers understand information on web sites through knowledge representations, agents, and ontologies.     

选择正确的DC/DC转换器拓扑

基于电子设备的处理器系统设计人员经常在选择最佳电源架构时遇到困难。有时最佳的解决方案是插入式电源,而有时采用分立的元件组成的电源才是最佳解决方案。选择插入式电源解决方案相对来说比较直接,但对于缺乏电源设计经验的数字设计人员来说,设计一个分立电源解决方案可能会使他望而却步。大多 DC/DC 电源控制 IC 供应商均可提供有助于电路设计的详细辅助材料。但是,在开始电源设计之前,设计人员必须选择正确的拓扑。本文将介绍以下方法,来帮助为某些用于MCU、DSP及基于FPGA 的电子产品的最常用结构选择正确的电源拓扑。线性调节…     

工业标准Mezzanine模块

典型的CompactPCI系统和VME系统的I/O扩展是通过使用各种规格的板卡来实现,如选用CompactPCI或VME类型的板卡来实现这一简单功能显得大材小用且得不偿失,简单的I/O功能需要一种更低成本和更小规格尺寸板卡的标准。这种对Mezzanine标准的需求被业界所认可,2001年夏,IEEE颁布了P1386和P1386.1标准。这些标准又进一步被PICMG和VITA提升来满足电信和高吞吐量的需求。尽管这些中介承载模块是针对CompactPCI和VME设计,但是它们可被用在任何规格板卡上,前提是提供标准的机械、电气、信号要求。PMC标准是两个IEEE标准的集合,IE…     

纤巧型便携式设计中的多媒体信号路径

引言 把语音服务、高分辨率相机模块、MP3或PMP播放器功能整合在单个移动电话设计中,已成为未来中高端电话市场的发展趋势。除了超高的功率（〉700mW）立体声音频功能外,视频输出功能也出现在手机应用中,其输出仍主要是CVBS格式,而某些电话甚至提供S视频或模拟RGB输出。     

Probing stress effects in HfO2 gate stacks with time dependent measurements

Effects of constant voltage stress (CVS) on gate stacks consisting of an ALD HfO₂ dielectric with various interfacial layers were studied with time dependent sensing measurements: DC I–V, pulse I–V, and charge pumping (CP) at different frequencies. The process of injected electron trapping/de-trapping on pre-existing defects in the bulk of the high-κ film was found to constitute the major contribution to the time dependence of the threshold voltage (V_t) shift during stress. The trap generation observed with the low frequency CP measurements is suggested to occur within the interfacial oxide layer or the interfacial layer/high-κ interface, with only a minor effect on V_t.