随机分布反馈光纤激光器研究进展

随机分布反馈光纤激光器(RDFFL)是近几年才发展起来的一种新型光纤激光器。它在结构上区别于传统激光器,即无反射镜,激光的反馈通过光纤中随机分布的背向瑞利散射效应实现,因此是一种随机激光器。RDFFL通过光纤中的分布式拉曼散射效应获得增益,可实现稳定的、空间不相干的连续激光输出,被认为是一种重要的新光源,可用于非线性光学、光通信和传感等领域。对RDFFL的研究进展进行了综述,阐明了其工作原理,从理论上分析了其工作特性,并分析了其应用与发展前景。     

CO2激光辐照酵母菌的生物学效应

本研究应用不同剂量CO2激光辐照处理蔗蜜糖精工业性生产用酿酒酵母菌,旨在探讨CO2激光对酿酒酵母菌的生物学效应。结果表明,CO2激光对酵母菌细胞生长及生理代谢等方面具有刺激效应;CO2激光对酵母菌具有诱变作用,并已筛选出3株遗传变异菌株。     

ULSI低介电常数材料制备中的CVD技术

综述了制备ULSI低介电常数材料的各种CVD技术。详细介绍了PCVD技术淀积含氟氧化硅薄膜、含氟无定型碳膜与聚酰亚胺类薄膜的工艺,简要介绍了APCVD技术淀积聚对二甲苯类有机薄膜及RTCVD技术淀积SiOF薄膜的工艺。     

Bi_2O_3对自燃烧法合成NiZnCu铁氧体的显微结构与性能的影响

以金属硝酸盐和柠檬酸为原料 ,应用溶胶 -凝胶法与自燃烧结合的方法制备了 Ni Zn Cu铁氧体微细粉。文章主要讨论了溶胶 -凝胶与自燃烧法结合制备 Ni Zn Cu铁氧体粉末的新方法 ,对 Bi2 O3掺杂的低温烧结 Ni Zn Cu铁氧体从烧结性质、结构与相组成、显微形貌、磁性质方面进行了研究 ,在此基础上分析了 Bi对材料形成过程和磁化机制的影响 ,并解释了掺杂量对材料磁性能的综合作用     

微波电路的仿真和设计

仿真软件越来越广泛地应用于微波电路设计中。介绍了微波电路与系统仿真软件Serenade8.5的功能和应用,并以微波低通滤波器的仿直和设计为例说明了它的使用。以巴特沃斯原型滤波器为基础,首先分析了它的特性,然后对其进行优化,得到满足设计目标的低通滤波器。     

用矩阵元表示的空间自相关函数的传输特性

根据自相关函数的定义 ,从Fresnel衍射理论入手 ,运用Collins公式 ,推导得到了任意波面的空间自相关函数的传输公式 ,并针对几种特殊的光学系统进行了分析。     

Sub-50 nm P-channel FinFET

High-performance PMOSFETs with sub-50-nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI MOSFET features: 1) a transistor channel which is formed on the vertical surfaces of an ultrathin Si fin and controlled by gate electrodes formed on both sides of the fin; 2) two gates which are self-aligned to each other and to the source/drain (S/D) regions; 3) raised S/D regions; and 4) a short (50 nm) Si fin to maintain quasi-planar topology for ease of fabrication. The 45-nm gate-length p-channel FinFET showed an I_dsat of 820 μA/μm at V_ds=V_gs=1.2 V and T _ox=2.5 mm. Devices showed good performance down to a gate-length of 18 nm. Excellent short-channel behavior was observed. The fin thickness (corresponding to twice the body thickness) is found to be critical for suppressing the short-channel effects. Simulations indicate that the FinFET structure can work down to 10 nm gate length. Thus, the FinFET is a very promising structure for scaling CMOS beyond 50 nm     

Performance of high-concentrationEr3+-Yb3+-codoped phosphate fiber amplifiers

Performance of high-concentration Er³⁺-Yb³⁺-codoped phosphate fiber amplifiers in a copumping configuration is presented. Gain, noise figure, and output signal saturation power of fiber amplifiers with different lengths are reported. From a 3.6-cm-long fiber, 18-dB internal gain, i.e., 5 dB/cm, for small signal input at 1535 nm, was achieved. To the best of our knowledge, this is the highest gain per unit length for erbium-doped fiber amplifiers ever reported     

Small-signal frequency response of long-wavelength vertical-cavitylasers

The small-signal frequency response of long-wavelength vertical-cavity lasers (LW-VCLs) is of interest in determining the ultimate bandwidth of these devices for use in terrestrial networks. This letter analyses two distinct device structures of double wafer-bonded vertical-cavity lasers operating at 1.5 μm and compares their high-speed performance. We demonstrate the highest modulation bandwidth and the highest modulation current efficiency of an electrically pumped LW-VCL of 7 and 4.1 GHz/√mA, respectively