核孔膜生产线膜微孔制备工艺实验研究

本文介绍核孔膜生产线,重点描述了膜微孔制备工艺的实验研究。对于PC和PES膜,已得到32种工况下的扩孔公式,其形式为D=A+Bt,其中D——孔径,t——扩孔时间,A,B为特定工艺参数下的常数值.通过实验。得到了膜孔密度N与300~#核反应堆功率P、热柱辐照位置L的经验公式,即N=6.97×10~5×10~3×101~(1.18L).在本生产线上可生产最大幅面为3 140mm×240mm,孔径为0.04～10 μm的多系列多规格的核孔膜产品。     

9．5－32mm波段大气衰减随仰角变化的实验研究

在实测和分析３２、１４．６、１２．５和９．５ｍｍ波段大气衰减的基础上，研究了大气衰减随仰角变化的规律；讨论了仰角为３～９０°时计算大气衰减的简化计算公式；给出了大气等效高度与地面水汽密度的关系式，对大气衰减和等效高度的实测值与理论值进行了比较和分析．     

薄膜微型电源

介绍了新型的薄膜微型电源的工作原理、结构及制造工艺。     

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD’s) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm². Fiz. Tekh. Poluprovodn. 32, 1482–1486 (December 1998)     

氧化锌压敏陶瓷烧结致密化过程的研究

本文研究了氧化锌压敏陶瓷的致密化过程，结果发现只有当烧结温度升高到一定值时，试样中的ＺｎＯ粉粒产生聚集，致密化过程才开始．致密化是瓷体获得稳定电性能的基础．低熔点添加剂Ｂ２Ｏ３可以降低致密化的起始温度，而致密化过程中的等温烧结对ＺｎＯ压敏陶瓷的最大密度几乎没有影响．     

Influence of the intensity of gg irradiation on the photoluminescence of GaAs:Te

The influence of gg irradiation (⁶⁰Co) of various intensities (P _γ≈1.7−7.5kGR/h) on the photoluminescence of GaAs:Te single crystals [n ₀=(1.2–2.3×10¹⁸ cm⁻³] is investigated. Together with the known photoluminescence impurity bands (hν _max≈1.2 eV and/or hν _max≈1.35 eV) and edge band (hν _max≈1.51 eV), new bands are also observed in the spectra at hν _max≈1.3 eV and hν _max≈1.48 eV. The observed effects are attributed to radiation-stimulated ordering of the donor impurity and deep impurity centers. Fiz. Tekh. Poluprovodn. 32, 38–39 (January 1998)     

Accumulation of hydrogen and its influence on the microstructure and mechanical properties of Kh18N10T steel

By the methods of thermal-desorption spectrometry and nuclear reactions, we study the processes of trapping, thermal desorption, and evolution of the profiles of distribution of deuterium ionically implanted with an energy of 12 keV into Kh18N10T steel at room temperature. The evolution of the microstructure of steel under the conditions of irradiation of samples with D₂⁺ ions up to doses of 1 · 10¹⁸ D/m²−2 · 10²² D/m² is studied by the method of electron microscopy. The regularities of changes in the mechanical properties of steel after irradiation are determined. __________ Translated from Fizyko-Khimichna Mekhanika Materialiv, Vol. 43, No. 5, pp. 117–121, September–October, 2007.     

High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities

The effect of phosphorus impurities on the electronic structure of silicon single crystals and SiO₂: Si nanocomposites is studied. The SiO₂: Si structures with phosphorus impurities that are annealed over 2 h at a temperature of 1000°C exhibit an increase in the photoluminescence peak related to Si nanocrystals. The experimentally determined densities of states in the valence and conduction bands of SiO₂: Si composites are in good agreement with the local electronic structure in the vicinity of silicon impurities that is calculated within the approximation of linear muffin-tin orbitals.