一种应用于二次布局的有效划分方法

提出了一种基于二次布局的结合MFFC结群和hMETIS划分的算法.实验表明:这种方法能得到很好的布局结果,但是运行消耗的时间比较长.为了缩短划分在二次布局中运行的时间,提出了一种改进的结群算法IMFFC,用它在二次布局中做划分.与前者相比较,这种方法虽然布局质量稍差,但速度更快.     

掺Yb相移光纤光栅形成过程的分析

研究了用二次曝光法制作掺Yb相移光纤光栅的实验过程 ,并对相移光纤光栅制作过程中出现次峰的情况进行了理论分析。合理地解释了该现象     

甲基丙烯酸三氟乙酰氧乙酯的聚合

对甲基丙烯酸三氟乙酰氧乙酯(TFAOEMA)的阴离子聚合及原予转移自由基聚合进行了研究。常用的阴离于引发剂如丁基锂、1，1-二苯基已基锂等很难引发TFAOEMA的阴离子聚合，而碱性较弱的引发剂如三乙基铝却容易引发，且产率较高。以氯化亚铜、五甲基二乙基三胺、溴代丙酸乙酯为引发体系的TFAOEMA的本体原子转移自由基聚合符合活性聚合特征。但在四氢呋喃为溶剂的原子转移自由基聚合中却存在活性中心失活现象。以末端含卤素的聚甲基丙烯酸甲酯为大分子引发剂，引发TFAOEMA的原子转移自由基聚合，得到了含氟双嵌段聚合物。     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

五氧化二钽薄膜的制备及其I-U特性

本文利用脉冲直流反应磁控溅射的方法制备了五氧化二钽 (Ta2 O5)薄膜 ,俄歇电子能谱仪测试了薄膜的成分含量 ,椭偏仪测试了Ta2 O5薄膜的厚度和折射率 ,XRD分析了薄膜的晶体结构 ,并且分别研究了氧气含量、基底温度等成膜工艺对薄膜的影响。研究结果表明薄膜的成分主要是由氧气含量决定的。利用金属 绝缘体 (介质膜 ) 金属 (MIM)结构初步对Ta2 O5薄膜进行了电学性能的测试 :皮安电流电压源测试了薄膜的I U特性 ,制备出的薄膜折射率在 2 1～ 2 2 ,MIM的I U特性曲线显示了较好的对称性和低的漏电流密度     

深亚微米集成电路的快速时域仿真技术

随着深亚微米集成电路技术的发展，集成电路的规模越来越大，工作频率越来越高，并正朝着系统集成的方向发展，因而在模拟速度，模拟精度和可模拟的电路规模等各个方面对电路仿真技术提出了新的要求。近年来，各种新的电路仿真方法和仿真系统用相继脱颖百出，并将取代那些传统的，已经无法适应深亚微米技术发展的电路仿真器。     

北京火车站抗震鉴定与加固技术

北京火车站是首都重要的标志性建筑之一 ,195 9年建成 ,当时按 7度设防考虑 ,存在着许多不符合抗震要求的问题 ,一些设施也明显不能满足现代使用功能要求。北京火车站抗震加固与改造设计项目组 ,运用多种先进的加固手段 ,在保持原建筑外貌不变的前提下 ,实现了抗震能力和改善使用功能的协调 ,取得了大型公共建筑加固改造的新经验     

钇铁石榴石薄膜材料的光吸收谱及Bi,Al掺入对谱的影响研究

采用单离子晶场跃迁模型，拟合出钇铁石榴石（ＹＩＧ）薄膜材料的光吸收谱，与实验谱吻合得较好。从实验和理论上分析了（ＢＩＡＩ）ＹＩＧ 薄膜材料的光吸收谱，结果表明，Ａｌ３＋离子的作用如同稀释剂一样，减小了光吸收，Ｂｉ３＋离子由于其强的自旋轨道耦合作用，增大了跃迁振子强度和跃迁线宽，从而增大了光吸收损耗，在此基础上所作的（ＢｉＡｌ）ＹＩＧ的理论谱与实验谱符合得较好。     

微电量测量中信号的拾取和放大

本文介绍了静电计级运算放大器在工业微电量测量中的应用,并且给出了实际的电路结构和相关的噪声解决办法。     

A clinical study in the treatment of acute bacterial infections with fleroxacin

The purpose of this clinical trial is to evaluate the efficacy and safety of fleroxacin and to compare with those of lomefloxacin. A randomized controlled study was carried out to treat sixty patients with urinary tract and respiratory tract bacterial infections, thirty in each group with one of the two drugs, and fifty cases were treated with fleroxacin in an open trial. Altogether there were one hundred and ten cases. Both fleroxacin and lomefloxacin were given orally, the dosage was 200 mg every 12 hours or 400 mg every 24 hours for 7-14 days. The clinical efficacy rate was 93.3%; the culturing rate in the fleroxacin group was 83.3%; the bacterial clearance rate was 92.3%, the incidence of adverse reactions was 9.4%, while in the lomefloxacin group they were 90.0%, 80.0%, 87.5% and 6.7% respectively, with no statistically significant difference between the two groups (P > 0.05). In the open and randomized trials, fleroxacin cured eighty cases of bacterial infections, the overall clinical efficacy rate was 90.0%, the culturing rate in the flero-xacin group was 83.8%, the bacterial clearance rate was 88.2% and the incidence of adverse reactions was 9.6%. It is shown that fleroxacin is an antibiotic of broad-spectrum, high efficacy and safety.