Effects of structural parameters on water film properties of transpiring wall reactor

Corrosion and salt deposition problems severely restrict the industrialization of supercritical water oxidation. Transpiring wall reactor can effectively weaken these two problems by a protective water film. In this work, methanol was selected as organic matter, and the influences of vital structural parameters on water film properties and organic matter removal were studied via numerical simulation. The results indicate that higher than 99% of methanol conversion could be obtained and hardly affected by transpiration water layer, transpiring wall porosity and inner diameter. Increasing layer and porosity reduced reactor center temperature, but inner diameter's influence was lower relatively. Water film temperature reduced but coverage rate raised as layer, porosity, and inner diameter increased. Notably, the whole reactor was in supercritical state and coverage rate was only approximately 85% in the case of one layer. Increasing reactor length affected slightly the volume of the upper supercritical zone but enlarged the subcritical zone.     

Numerical Investigation of the Capture of Polydisperse Particles by Charged Droplets

The capture of particles by charged droplets was simulated by considering the electrostatic interactions of droplet-droplet and droplet-particle. The results indicate that the electrostatic repulsion between droplets leads to a dynamic accumulation mode of particles. However, the droplet spacing has an insignificant effect on the capture efficiency when the electrostatic deposition predominates. The increase of droplet charge remarkably improves the capture efficiency, in which the capture of fine particles accounts for the largest proportion. Compared to the droplet charge, the droplet size shows a limited improvement in the capture efficiency. Reducing the droplet velocity prolongs the capture time instead of enhancing the capture capacity per unit time, thereby improving capture efficiency.     

Disturbance Observer-based Adaptive Fault-tolerant Dynamic Surface Control of Nonlinear System with Asymmetric Input Saturation

International Journal of Control, Automation and Systems - In this paper, a composite fault-tolerant control problem is studied for a class of uncertain nonlinear system with asymmetric input...     

Mesoporous Co–Mn Spinel Oxides as Efficient Catalysts for Low Temperature Propane Oxidation

Catalysis Letters - A series of mesoporous cobalt–manganese catalysts were successfully synthesized by sol–gel method as efficient catalysts for the propane oxidation. A significant...     

Crystallographic characteristics and microwave dielectric properties of Ni-modified MgTa2O6 ceramics

Ni²⁺ modified MgTa₂O₆ ceramics with a trirutile phase and space group P4₂/mnm were obtained. The correlations between crystallographic characteristics and microwave dielectric performance of MgTa₂O₆ ceramics were systematically studied based on the chemistry bond theory (PVL theory) for the first time. The results indicate that the introduction of Ni²⁺ causes a change in polarizability and the Mg–O bond ionicity, which contributes to the variation of dielectric constant. Moreover, the lattice energy, and packing fraction, full width at half maximum of the Raman peak of Ta–O bond, as the quantitative characterization of crystallographic parameters, regulate the dielectric loss of MgTa₂O₆ ceramics in GHz frequency band. In addition, the study of sintering behavior shows that the densification and micromorphology are the crucial factors affecting the microwave dielectric performance. Typically, Ni²⁺ doping on the A-site of MgTa₂O₆ can effectively promote the Q × f values to 173,000 GHz (at 7.43 GHz), which ensures its applicability in 5G communication technology.     

聚氨酯分散剂在液体靛蓝制备中的应用

采用异佛尔酮二异氰酸酯(IPDI)、聚乙二醇200、400、600、800(PEG200、PEG400、PEG600、PEG800)、2,2-二羟甲基丙酸(DMPA)、1-苯基-1,2-乙二醇、中和剂三乙胺(TEA)、甲乙酮肟等为原料,制备了一种阴离子聚氨酯分散剂.通过FTIR、GPC、TG表征了分散剂的结构与性能.利用自制的分散剂采用研磨法制备了液体靛蓝分散液,以液体靛蓝分散液粒径、离心稳定性、储存稳定性为指标,探讨了分散剂链长、用量对分散液性能的影响.结果表明,研磨1 h后,以PEG400为软段合成的聚氨酯分散剂用量为染料质量的60％时制备的液体靛蓝粒径为277.1 nm,1000 r/min离心稳定性达到93.98％,3000 r/min离心稳定性为51.13％,常温放置7 d后粒径变化在20 nm以内,染色后织物的颜色深度(K/S)为10左右,约是粉状靛蓝染色K/S的2倍,染色织物的颜色性能并未改变,SEM显示分散体颗粒大小分布均匀,与分散剂甲基萘磺酸钠的甲醛缩合物(MF)和木质素85A相比,其分散体系稳定性差别不大.     

Investigation of crystal characteristics,Raman spectra,and microwave dielectric properties of Mg1-xZnxTa2O6 ceramics

Mg_(1-x)Zn_xTa₂O₆ (x = 0.00?0.08) dielectric ceramics were synthesized via the traditional solid-state reaction method. We used XRD and Rietveld refinement to demonstrate that a pure Mg_(1-x)Zn_xTa₂O₆ phase with trirutile structure was formed. Zn²⁺ substitution helped to decrease the Raman full width at half width of the A_1g mode at 703 cm^?1, which resulted in an increase in the order and rigidity of the TaO₆ octahedron, this in turn contributed to improving the Q×f values. Additionally, the introduction of Zn²⁺ significantly promoted grain growth and increased the dense, and the molecular polarizability, these factors lead to a higher permittivity. Moreover, enhanced Ta-O bond energy resulted in a more stable TaO₆ octahedron in the Mg_(1?x)Zn_xTa₂O₆ system, which contributed to enhanced τ_f values via substitution of Zn²⁺ doped on the A-site. Correspondingly, the microwave dielectric properties were significantly improved for 0.04-doped samples, obtaining: ε_r = 27, Q × f = 185,000 GHz (at 7.47 GHz), τ_f =32 ppm/°C.     

Structural,optical and electrical properties of indium doped Cu2ZnSn(S,Se)4 thin films synthesized by the DC and RF reactive magnetron cosputtering

Element doping into the Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber is an effective method to optimize the performance of thin film solar cells. In this study, the Cu₂In_xZn_1-xSn(S,Se)₄ (CIZTSSe) precursor film was deposited by magnetron cosputtering technique using indium (In) and quaternary Cu₂ZnSnS₄ (CZTS) as targets. Meanwhile, the In content was controlled using the direct current (DC) power on In target (P_In). A single kesterite CIZTSSe alloy was formed by successfully doping a small number of In³⁺ into the main lattice of CZTSSe. The partial Zn²⁺ cations were substituted by In³⁺ ions, resulting in improving properties of CZTSSe films. Morphological analysis showed that large grain CIZTSSe films could be obtained by doping In. The well-distributed, smooth, and dense film was obtained when the P_In was 30 W. The band gap of CIZTSSe could be continuously adjusted from 1.27 to 1.05 eV as P_In increased from 0 to 40 W. In addition, the CIZTSSe alloy thin film at P_In = 30 W exhibited the best p-type conductivity with Hall mobility of 6.87 cm²V^?1s^?1, which is a potential material as the absorption layer of high-performance solar cells.