Suppressing Lithium Dendrite Growth by Metallic Coating on a Separator

Lithium (Li) metal is one of the most promising candidates for the anode in high‐energy‐density batteries. However, Li dendrite growth induces a significant safety concerns in these batteries. Here, a multifunctional separator through coating a thin electronic conductive film on one side of the conventional polymer separator facing the Li anode is proposed for the purpose of Li dendrite suppression and cycling stability improvement. The ultrathin Cu film on one side of the polyethylene support serves as an additional conducting agent to facilitate electrochemical stripping/deposition of Li metal with less accumulation of electrically isolated or “dead” Li. Furthermore, its electrically conductive nature guides the backside plating of Li metal and modulates the Li deposition morphology via dendrite merging. In addition, metallic Cu film coating can also improve thermal stability of the separator and enhance the safety of the batteries. Due to its unique beneficial features, this separator enables stable cycling of Li metal anode with enhanced Coulombic efficiency during extended cycles in Li metal batteries and increases the lifetime of Li metal anode by preventing short‐circuit failures even under extensive Li metal deposition.     

Power factor correction converter using delay control

A low cost universal input voltage single-controller power factor correction converter for a 200 W power supply is proposed. It consists of the PFC part followed by a DC-DC converter as in a conventional two-stage scheme. However a single PWM controller is used as in a single-stage PFC scheme. The switch in the PFC part is synchronized with the switch in the DC-DC converter and has a fixed frequency. Employing an adaptive delay scheme, the PPC switch is controlled to limit the capacitor voltage within a desired range for optimum efficiency and to reduce input current harmonic distortion. The design procedures of the delay scheme, the feedback loop, and experimented results are presented to verify the performance     

Memory Access Optimized Implementation of Cyclic and Quasi-Cyclic LDPC Codes on a GPGPU

Software based decoding of low-density parity-check (LDPC) codes frequently takes very long time, thus the general purpose graphics processing units (GPGPUs) that support massively parallel processing can be very useful for speeding up the simulation. In LDPC decoding, the parity-check matrix H needs to be accessed at every node updating process, and the size of the matrix is often larger than that of GPU on-chip memory especially when the code length is long or the weight is high. In this work, the parity-check matrix of cyclic or quasi-cyclic (QC) LDPC codes is greatly compressed by exploiting the periodic property of the matrix. Also, vacant elements are eliminated from the sparse message arrays to utilize the coalesced access of global memory supported by GPGPUs. Regular projective geometry (PG) and irregular QC LDPC codes are used for sum-product algorithm based decoding with the GTX-285 NVIDIA graphics processing unit (GPU), and considerable speed-up results are obtained.     

Switched‐Capacitor Variable Gain Amplifier with Operational Amplifier Preset Technique

We present a novel operational amplifier preset technique for a switched‐capacitor circuit to reduce the acquisition time by improving the slewing. The acquisition time of a variable gain amplifier (VGA) using the proposed technique is reduced by 30% compared with a conventional one; therefore, the power consumption of the VGA is decreased. For additional power reduction, a programmable capacitor array scheme is used in the VGA. In the 0.13 μm CMOS process, the VGA, which consists of three‐stages, occupies 0.33 mm² and dissipates 19.2 mW at 60 MHz with a supply voltage of 1.2 V. The gain range is 36.03 dB, which is controlled by a 10‐bit control word with a gain error of ±0.68 LSB.     

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top‐Gate In‐Ga‐Zn‐Oxide Thin‐Film Transistors

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top‐gate In‐Ga‐Zn‐oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below 200°C, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as Si₃N₄ and Al₂O₃, the electrical properties are analyzed. After post‐annealing at 200°C for 1 hour in an O₂ ambient, the sub‐threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative‐bias stress tests on TFTs with a Si3N4 IDL, the degradation sources are closely related to unstable bond states, such as Si‐based broken bonds and hydrogen‐based bonds. From constant‐current stress tests of Id = 3 µA, an IGZO‐TFT with heat‐treated Si₃N₄ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge‐injection and electron‐trapping behavior.     

Soluble pentacene thin-film transistor using a high solvent and heat resistive polymeric dielectric with low-temperature processability and its long-term stability

Solution processable organic thin-film transistors (OTFTs) were fabricated using 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) and low-temperature processable polyimide gate dielectric. The TIPS-pentacene OTFT with the dielectric was found to have a field-effect mobility of 0.15 cm²/Vs, which is comparable to that of OTFT with an inorganic dielectric. The OTFTs with the polyimide dielectric did not show any significant performance degradation as time passed. A field-effect mobility of the OTFTs in 60 days was found to be almost identical to that of pristine OTFT. The combination of TIPS-pentacene and our polyimide gate dielectric can be one of the potential candidates for the fabrication of stable OTFTs for large-area flexible electronics.     

Broadcasting System Compliant with MPEG‐2/4 IPMPX

In this paper, we present an intellectual property management and protection (IPMP) system in a broadcasting environment to provide mechanisms for copyright and contents protection that are compliant with the MPEG‐2 and MPEG‐4 IPMP Extension (IPMPX) specifications. The technology for processing IPMP related information was exploited, and a terminal model has been successfully designed and implemented. In addition, interoperability, which is the main objective of MPEG‐2/4 IPMPX, has been addressed in detail. The experimental results show that the implemented system performs the IPMP process well, meeting the requirements of a broadcasting environment.     

Unraveling the Significance of Li+/e−/O2 Phase Boundaries with a 3D-Patterned Cu Electrode for Li–O2 Batteries

The reaction kinetics at a triple-phase boundary (TPB) involving Li⁺, e⁻, and O₂ dominate their electrochemical performances in Li–O₂ batteries. Early studies on catalytic activities at Li⁺/e⁻/O₂ interfaces have enabled great progress in energy efficiency; however, localized TPBs within the cathode hamper innovations in battery performance toward commercialization. Here, the effects of homogenized TPBs on the reaction kinetics in air cathodes with structurally designed pore networks in terms of pore size, interconnectivity, and orderliness are explored. The diffusion fluxes of reactants are visualized by modeling, and the simulated map reveals evenly distributed reaction areas within the periodic open structure. The 3D air cathode provides highly active, homogeneous TPBs over a real electrode scale, thus simultaneously achieving large discharge capacity, unprecedented energy efficiency, and long cyclability via mechanical/electrochemical stress relaxation. Homogeneous TPBs by cathode structural engineering provide a new strategy for improving the reaction kinetics beyond controlling the intrinsic properties of the materials.     

Ag Nanowire Reinforced Highly Stretchable Conductive Fibers for Wearable Electronics

Stretchable conductive fibers have received significant attention due to their possibility of being utilized in wearable and foldable electronics. Here, highly stretchable conductive fiber composed of silver nanowires (AgNWs) and silver nanoparticles (AgNPs) embedded in a styrene–butadiene–styrene (SBS) elastomeric matrix is fabricated. An AgNW‐embedded SBS fiber is fabricated by a simple wet spinning method. Then, the AgNPs are formed on both the surface and inner region of the AgNW‐embedded fiber via repeated cycles of silver precursor absorption and reduction processes. The AgNW‐embedded conductive fiber exhibits superior initial electrical conductivity (σ₀ = 2450 S cm^?1) and elongation at break (900% strain) due to the high weight percentage of the conductive fillers and the use of a highly stretchable SBS elastomer matrix. During the stretching, the embedded AgNWs act as conducting bridges between AgNPs, resulting in the preservation of electrical conductivity under high strain (the rate of conductivity degradation, σ/σ₀ = 4.4% at 100% strain). The AgNW‐embedded conductive fibers show the strain‐sensing behavior with a broad range of applied tensile strain. The AgNW reinforced highly stretchable conductive fibers can be embedded into a smart glove for detecting sign language by integrating five composite fibers in the glove, which can successfully perceive human motions.     

Room‐Temperature Metallic Fusion‐Induced Layer‐by‐Layer Assembly for Highly Flexible Electrode Applications

To fabricate flexible electrodes, conventional silver (Ag) nanomaterials have been deposited onto flexible substrates, but the formed electrodes display limited electrical conductivity due to residual bulky organic ligands, and thus postsintering processes are required to improve the electrical conductivity. Herein, an entirely different approach is introduced to produce highly flexible electrodes with bulk metal–like electrical conductivity: the room‐temperature metallic fusion of multilayered silver nanoparticles (NPs). Synthesized tetraoctylammonium thiosulfate (TOAS)‐stabilized Ag NPs are deposited onto flexible substrates by layer‐by‐layer assembly involving a perfect ligand‐exchange reaction between bulky TOAS ligands and small tris(2‐aminoethyl)amine linkers. The introduced small linkers substantially reduce the separation distance between neighboring Ag NPs. This shortened interparticle distance, combined with the low cohesive energy of Ag NPs, strongly induces metallic fusion between the close‐packed Ag NPs at room temperature without additional treatments, resulting in a high electrical conductivity of ≈1.60 × 10⁵ S cm^?1 (bulk Ag: ≈6.30 × 10⁵ S cm^?1). Furthermore, depositing the TOAS–Ag NPs onto cellulose papers through this approach can convert the insulating substrates into highly flexible and conductive papers that can be used as 3D current collectors for energy‐storage devices.