Facile Fabrication and Superparamagnetism of Silica‐Shielded Magnetite Nanoparticles on Carbon Nitride Nanotubes

Using conventional methods to synthesize magnetic nanoparticles (NPs) with uniform size is a challenging task. Moreover, the degradation of magnetic NPs is an obstacle to practical applications. The fabrication of silica‐shielded magnetite NPs on carbon nitride nanotubes (CNNTs) provides a possible route to overcome these problems. While the nitrogen atoms of CNNTs provide selective nucleation sites for NPs of a particular size, the silica layer protects the NPs from oxidation. The morphology and crystal structure of NP–CNNT hybrid material is investigated by transmission electron microscopy (TEM) and X‐ray diffraction. In addition, the atomic nature of the N atoms in the NP–CNNT system is studied by near‐edge X‐ray absorption fine structure spectroscopy (nitrogen K‐edge) and calculations of the partial density of states based on first principles. The structure of the silica‐shielded NP–CNNT system is analyzed by TEM and energy dispersive X‐ray spectroscopy mapping, and their magnetism is measured by vibrating sample and superconducting quantum interference device magnetometers. The silica shielding helps maintain the superparamagnetism of the NPs; without the silica layer, the magnetic properties of NP–CNNT materials significantly degrade over time.     

Restorable Type Conversion of Carbon Nanotube Transistor Using Pyrolytically Controlled Antioxidizing Photosynthesis Coenzyme

Here, a pyrolytically controlled antioxidizing photosynthesis coenzyme, β‐Nicotinamide adenine dinucleotide, reduced dipotassium salt (NADH) for a stable n‐type dopant for carbon nanotube (CNT) transistors is proposed. A strong electron transfer from NADH, mainly nicotinamide, to CNTs takes place during pyrolysis so that not only the type conversion from p‐type to n‐type is realized with 100% of reproducibility but also the on/off ratio of the transistor is significantly improved by increasing on‐current and/or decreasing off‐current. The device was stable up to a few months with negligible current changes under ambient conditions. The n‐type characteristics were completely recovered to an initial doping level after reheat treatment of the device.     

Controlled Growth of ZnO Nanowires and Their Optical Properties

This article surveys recent developments in the rational synthesis of single‐crystalline zinc oxide nanowires and their unique optical properties. The growth of ZnO nanowires was carried out in a simple chemical vapor transport and condensation (CVTC) system. Based on our fundamental understanding of the vapor–liquid–solid (VLS) nanowire growth mechanism, different levels of growth controls (including positional, orientational, diameter, and density control) have been achieved. Power‐dependent emission has been examined and lasing action was observed in these ZnO nanowires when the excitation intensity exceeds a threshold (∼40 kW cm^–2). These short‐wavelength nanolasers operate at room temperature and the areal density of these nanolasers on substrate readily reaches 1 × 10¹⁰ cm^–2. The observation of lasing action in these nanowire arrays without any fabricated mirrors indicates these single‐crystalline, well‐facetted nanowires can function as self‐contained optical resonance cavities. This argument is further supported by our recent near‐field scanning optical microscopy (NSOM) studies on single nanowires.     

Covalent 0D–2D Heterostructuring of Co9S8–MoS2 for Enhanced Hydrogen Evolution in All pH Electrolytes

Ultrasmall Co₉S₈ nanoparticles are introduced on the basal plane of MoS₂ to fabricate a covalent 0D–2D heterostructure that enhances the hydrogen evolution reaction (HER) activity of electrochemical water splitting. In the heterostructure, separate phases of Co₉S₈ and MoS₂ are formed, but they are connected by Co–S–Mo type covalent bonds. The charge redistribution from Co to Mo occurring at the interface enhances the electron‐doped characteristics of MoS₂ to generate electron‐rich Mo atoms. Besides, reductive annealing during the synthesis forms S defects that activates adjacent Mo atoms for further enhanced HER activity as elucidated by the density functional theory (DFT) calculation. Eventually, the covalent Co₉S₈–MoS₂ heterostructure shows amplified HER activity as well as stability in all pH electrolytes. The synergistic effect is pronounced when the heterostructure is coupled with a porous Ni foam (NF) support to form Co₉S₈–MoS₂/NF that displays superior performance to those of the state‐of‐the‐art non‐noble metal electrocatalysts, and even outperforms a commercial Pt/C catalyst in a practically meaningful, high current density region in alkaline (>170 mA cm^?2) and neutral (>60 mA cm^?2) media. The high HER performance and stability of Co₉S₈–MoS₂ heterostructure make it a promising pH universal alternative to expensive Pt‐based electrocatalysts for practical water electrolyzers.     

Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top‐Contact‐Structured Organic Transistors

Controlling the interfacial properties between the electrode and active layer in organic field‐effect transistors (OFETs) can significantly affect their contact properties, resulting in improvements in device performance. However, it is difficult to apply to top‐contact‐structured OFETs (one of the most useful device structures) because of serious damage to the organic active layer by exposing solvent. Here, a spontaneously controlled approach is explored for optimizing the interface between the top‐contacted source/drain electrode and the polymer active layer to improve the contact resistance (R_C). To achieve this goal, a small amount of interface‐functionalizing species is blended with the p‐type polymer semiconductor and functionalized at the interface region at once through a thermal process. The R_C values dramatically decrease after introduction of the interfacial functionalization to 15.9 kΩ cm, compared to the 113.4 kΩ cm for the pristine case. In addition, the average field‐effect mobilities of the OFET devices increase more than three times, to a maximum value of 0.25 cm² V^?1 s^?1 compared to the pristine case (0.041 cm² V^?1 s^?1), and the threshold voltages also converge to zero. This study overcomes all the shortcomings observed in the existing results related to controlling the interface of top‐contact OFETs by solving the discomfort of the interface optimization process.     

Bandwidth Adaptation Algorithms for Adaptive Multimedia Services in Mobile Cellular Networks

The fluctuation of available link bandwidth in mobilecellular networks motivates the study of adaptive multimediaservices, where the bandwidth of an ongoing multimedia call can bedynamically adjusted. We analyze the diverse objectives of theadaptive multimedia framework and propose two bandwidth adaptationalgorithms (BAAs) that can satisfy these objectives. The firstalgorithm, BAA-RA, takes into consideration revenue and``anti-adaptation' where anti-adaptation means that a user feelsuncomfortable whenever the bandwidth of the user's call ischanged. This algorithm achieves near-optimal total revenue withmuch less complexity compared to an optimal BAA. The secondalgorithm, BAA-RF, considers revenue and fairness, and aims at themaximum revenue generation while satisfying the fairnessconstraint defined herein. Comprehensive simulation experimentsshow that the difference of the total revenue of BAA-RA and thatof an optimal BAA is negligible. Also, numerical results revealthat there is a conflicting relationship between anti-adaptationand fairness.     

Novel zero-voltage and zero-current-switching (ZVZCS) full-bridge PWM converter using coupled output inductor

A novel zero-voltage and zero-current-switching (ZVZCS) full-bridge pulse-width-modulated (PWM) converter is proposed to improve the previously proposed ZVZCS full-bridge PWM converters. By employing a simple auxiliary circuit with neither lossy components nor active switches, soft-switching of the primary switches is achieved. The proposed converter has many advantages such as simple auxiliary circuit, high efficiency, low voltage stress of the rectifier diode and self-adjustment of the circulating current, which make the proposed converter attractive for the high voltage and high power applications. The principles of operation and design considerations are presented and verified on the 4 kW experimental converter operating at 80 kHz.     

Transition probabilities of coded BPSK signals for hard-decisiondecoding with k-bit CSI in Nakagami-m fading channels

We evaluate a closed form expression of the transition probabilities used for calculating metric values and pairwise error probabilities of convolutional codes, equipped with coherent BPSK signals, for hard-decision decoding with k-bit channel state information (CSI) in slow varying frequency nonselective Nakagami-m fading channels. It is noted that 1-bit CSI is sufficient to take advantage of channel information under deep fadings