Experimental determination of electron and hole mobilities in MOSaccumulation layers

This letter presents for the first time, the experimentally determined majority carrier mobilities in the accumulation layer of a MOSFET for both p-type and n-type channel doping for a wide range of doping concentrations. The measured carrier mobility is observed to follow a universal behavior at high transverse fields, similar to that observed for minority carriers in MOS inversion layers. At the higher doping levels, the effective mobility for majority carriers at low to moderate transverse fields is found to be very close to the bulk mobility. This is believed to be due to carrier screening of the ionized impurity scattering which dominates at the higher doping concentrations     

A time-frequency analysis method for radar scattering

A time-frequency analysis method to study electromagnetic scattering is presented and demonstrated using canonical objects. The time-frequency analysis method utilizes the Bargmann transform to formulate the signal representation in phase space. The use of the Bargmann transform leads to an attractive parametric signal representation in terms of complex polynomials, and elliptical filters can be constructed to crop or extract selected areas of the phase plane. The signal representation and filtering operations are demonstrated using scattering responses from spheres and thin wires, and the prominent scattering features are identified and extracted     

Calculation of secondary cable losses and ampacity in the presenceof harmonics

A simplified procedure for computing ohmic losses in secondary distribution cable systems by extending the Neher-McGrath model for 60 Hz losses is presented. Specifically, simplified formulae for evaluating ohmic losses due to harmonics are given. These results are subsequently used to compute the cable ampacity or the derating factor due to harmonics. The overall method is simple to follow and can be performed with a calculator. A typical example is given     

Modal convection and its effect on the stability of EDM wires

Recently, it has been shown that EDM wires undergo thermal buckling at low axial transport speeds and a series of transport instabilities at high axial transport speeds. Hence, only intermediate speeds ensure the straight wire configuration, which is needed for high-accuracy cutting. These conclusions are based on the assumption that the convective heat transfer coefficient remains piecewise constant along the length of the wire. However, a recent study on convection from a vibrating, flexible body shows that the convection coefficient becomes modal. The present study re-examines the wire stability problem with this modal effect in mind. It is shown that at low axial transport speeds, the straight wire configuration may be stable. Its stability hinges on vibration—large amplitude motion implies increased convection and increased stability from thermal buckling. At high transport speeds, the system still undergoes the reported transport instabilities. This work shows that the well-defined intermediate speed range is not so well-defined in the presence of wire vibrations.     

Theoretical comparison of SiC PiN and Schottky diodes based on power dissipation considerations

In order to select the optimal device for a particular application, designers must carefully analyze the tradeoffs between competing devices. Recent progress in SiC power rectifiers has resulted in the demonstration of high-voltage PiN and Schottky barrier diodes (SBDs). With both technologies maturing, power electronics engineers will soon face the task of selecting between these two devices. Until recently, the choice was simple, since silicon SBDs are only available for relatively low voltage applications. The choice is not as clear when considering SiC diodes, and guidelines for determining the proper application of each are needed. The purpose of this paper is to provide such guidelines, based on an analysis of the most significant tradeoffs involved.     

Convergence

Convergence is the idea of merging the duties and responsibilities of physical security with that of digital security to make them part of a common reporting structure--to employ tools and techniques that are parallel if not collinear.     

Direct synthesis and characterization of the Fe3+ analogue of Naβ″-alumina

A new isomorphic analogue of-alumina, a potassium-free Na-ferrite (Na₂O · 5 (Al_0.10Fe_1.90)O₃, referred to as Na-ferrite), has been synthesized and is characterized using X-ray powder and single crystal diffraction, wet chemical analysis, and transmission electron microscopy (TEM). In addition, Na-aluminate-gallate-ferrate phases were also successfully synthesized, but were not characterized in detail. Na-ferrite grew in a slowly cooling melt or partial melt from 1250° C in air using Na₂CO₃ and Fe₃O₄ (magnetite) as starting materials. The compound was also synthesized using-Fe₂O₃ instead of Fe₃O₄ under the same conditions, but its abundance was much less and-Fe₂O₃ and NaFeO₂ were the dominant phases. The new material (cell dimensionsa = 0.5955,c = 3.5623 nm) is reversibly hygroscopic, andc increases 2% after hydration. TEM images dearly show the 1.19 nm lattice spacing corresponding to the ionic conduction planes, and these planes are observed to be both straight and curled. The origin of the curled lattice planes, the existence of which is also evident in the single crystal precession photographs, is not clear, although we believe it may involve a structural misfit between the ferric oxide spineI block and soda layer.