An improved technique and experimental results for the extractionof electron and hole mobilities in MOS accumulation layers

For the first time, experimental results are presented for electron and hole mobilities in the electron and hole accumulation layers of a MOSFET for a wide range of doping concentrations. Also presented is an improved methodology that has been developed in order to enable more accurate extraction of the accumulation layer mobility. The measured accumulation layer mobility for both electrons and holes is observed to follow a universal behavior at high transverse electric fields, similar to that observed for minority carriers in MOS inversion layers. At low to moderate transverse fields, the effective carrier mobility values are greater than the bulk mobility values for the highest doping levels. This is due to screening by accumulated carriers of the ionized impurity scattering by accumulated carriers, which dominates at higher doping concentrations. For lower doping levels, surface phonon scattering is dominant at low to moderate transverse fields so that the carrier mobility is below the bulk mobility value     

Digital CMOS IC's in 6H-SiC operating on a 5-V power supply

A CMOS technology in 6H-SiC utilizing an implanted p-well process is developed. The p-wells are fabricated by implanting boron ions into an n-type epilayer. PMOS devices are fabricated on an n-type epilayer while the NMOS devices are fabricated on implanted p-wells using a thermally grown gate oxide. The resulting NMOS devices have a threshold voltage of 3.3 V while the PMOS devices have a threshold voltage of -4.2 V at room temperature. The effective channel mobility is around 20 cm ²/Vs for the NMOS devices and around 7.5 cm²/Vs for the PMOS devices. Several digital circuits, such as inverters, NAND's, NOR's, and 11-stage ring oscillators are fabricated using these devices and exhibited stable operation at temperatures ranging from room temperature to 300°C. These digital circuits are the first CMOS circuits in 6H-SiC to operate with a 5-V power supply for temperatures ranging from room temperature up to 300°C     

Physical modeling of temperature dependences of SOI CMOS devicesand circuits including self-heating

To simulate and examine temperature and self-heating effects in Silicon-On-Insulator (SOI) devices and circuits, a physical temperature-dependence model is implemented into the SOISPICE fully depleted (FD) and nonfully depleted (NFD) SOI MOSFET models. Due to the physical nature of the device models, the temperature-dependence modeling, which enables a device self-heating option as well, is straightforward and requires no new parameters. The modeling is verified by DC and transient measurements of scaled test devices, and in the process physical insight on floating-body effects in temperature is attained. The utility of the modeling is exemplified with a study of the temperature and self-heating effects in an SOI CMOS NAND ring oscillator. SOISPICE transient simulations of the circuit, with floating and tied bodies, reveal how speed and power depend on ambient temperature, and they predict no significant dynamic self-heating, irrespective of the ambient temperature     

Filter matrix estimation in automated DNA sequencing

In four-color fluorescence-based automated DNA sequencing, a 4×4 filter matrix parameterizes the relationship between the dye-intensity signals of interest and the data collected by an optical imaging system. The filter matrix is important because the estimated DNA sequence is based on the dye intensities that can only be recovered via inversion of the matrix. Here, the authors present a calibration method for the estimation of the columns of this matrix, using data generated through a special experiment in which DNA samples are labeled with only one fluorescent dye at a time. Simulations and applications of the method to real data are provided, with promising results     

Robust channel estimation for OFDM systems with rapid dispersivefading channels

Orthogonal frequency-division multiplexing (OFDM) modulation is a promising technique for achieving the high bit rates required for a wireless multimedia service. Without channel estimation and tracking, OFDM systems have to use differential phase-shift keying (DPSK), which has a 3-dB signal-to-noise ratio (SNR) loss compared with coherent phase-shift keying (PSK). To improve the performance of OFDM systems by using coherent PSK, we investigate robust channel estimation for OFDM systems. We derive a minimum mean-square-error (MMSE) channel estimator, which makes full use of the time- and frequency-domain correlations of the frequency response of time-varying dispersive fading channels. Since the channel statistics are usually unknown, we also analyze the mismatch of the estimator-to-channel statistics and propose a robust channel estimator that is insensitive to the channel statistics. The robust channel estimator can significantly improve the performance of OFDM systems in a rapid dispersive fading channel     

Wavelet-based feature extraction from oceanographic images

Features in satellite images of the oceans often have weak edges. These images also have a significant amount of noise, which is either due to the clouds or atmospheric humidity. The presence of noise compounds the problems associated with the detection of features, as the use of any traditional noise removal technique will also result in the removal of weak edges. Recently, there have been rapid advances in image processing as a result of the development of the mathematical theory of wavelet transforms. This theory led to multifrequency channel decomposition of images, which further led to the evolution of important algorithms for the reconstruction of images at various resolutions from the decompositions. The possibility of analyzing images at various resolutions can be useful not only in the suppression of noise, but also in the detection of fine features and their classification. This paper presents a new computational scheme based on multiresolution decomposition for extracting the features of interest from the oceanographic images by suppressing the noise. The multiresolution analysis from the median presented by Starck-Murtagh-Bijaoui (1994) is used for the noise suppression     

Quality measurement and use of pre-processing in image compression

Traditional quality measures for image coding, such as the peak signal-to-noise ratio, assume that the preservation of the original image is the desired goal. However, pre-processing images prior to encoding, designed to remove noise or unimportant detail, can improve the overall performance of an image coder. Objective image quality metrics obtained from the difference between the original and coded images cannot properly assess this improved performance. This paper proposes a new methodology for quality metrics that differentially weighs the changes in the image due to pre-processing and encoding. These new quality measures establish the value of pre-processing for image coding and quantitatively determine the performance improvement that can be thus achieved by JPEG and wavelet coders.     

Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN

The annealing conditions and contact resistivities of Ta/Al ohmic contacts to n-type GaN are reported for the first time. The high temperature stability and mechanical integrity of Ti/Al and Ta/Al contacts have been investigated. Ta/Al (35 nm/115 nm) contacts to n-type GaN became ohmic after annealing for 3 min at 500°C or for 15 s at 600°C. A minimum contact resistivity of 5×10⁻⁶Ω cm² was measured after contacts were repatterned with an Al layer to reduce the effect of a high metal sheet resistance. Ti/Al and Ta/Al contacts encapsulated under vacuum in quartz tubes showed a significant increase in contact resistivity after aging for five days at 600°C. Cross section transmission electron microscopy micrographs and electrical measurements of aged samples indicate that the increased contact resistivity is primarily the result of degradation of the metal layers. Minimal reactions at the metal/GaN interface of aged samples were observed.     

Plasma chemistries for dry etching of NiFe and NiFeCo

Plasma chemistries based on chlorine, bromine, or iodine have been investigated for inductively coupled plasma etching of NiFe and NiFeCo. There is clear evidence of a chemically enhanced etch mechanism with both Cl₂- and I₂- based mixtures, with no enhancement present for Br₂ chemistries. Etch yields are typically low (≤0.25), emphasizing the need for high ion fluxes in order to achieve practical material removal rates.     

Modular implementation of efficient self-checking checkers for the Berger code

A technique for designing efficient checkers for conventional Berger code is proposed in this paper. The check bits are derived by partitioning the information bits into two blocks, and then using an addition array to sum the number of 1's in each block. The check bit generator circuit uses a specially designed 4-input 1's counter. Two other types of 1's counters having 2 and 3 inputs are also used to realize checkers for variable length information bits. Several variations of 2-bit adder circuits are used to add the number of 1's. The check bit generator circuit uses gates with fan-in of less than or equal to 4 to simplify implementation in CMOS. The technique achieves significant improvement in gate count as well as speed over existing approaches.