丙烷脱沥青装置技术改造

对玉门炼油化工总厂 0 .2 5Mt/a丙烷脱沥青装置的技术改造情况进行了较为详细的介绍 ,对改造前后的操作参数、产品质量和经济技术指标进行了对比。改造后加工能力提高到 0 .30Mt/a ,装置的操作弹性大大提高 ,产品质量优良 ,溶剂单耗由 16 .1kg/t降至 1.6 7kg/t,能耗由 2 4 49.3MJ/t降至 1172 .3MJ/t,年经济效率达 30 0 0× 10 4RMB $。     

Exploratory analysis of brain connectivity with ICA.

Covariance-based methods of exploration of functional connectivity of the brain from functional magnetic resonance imaging (fMRI) experiments, such as principal component analysis (PCA) and structural equation modeling (SEM), require a priori knowledge such as an anatomical model to infer functional connectivity. In this research, a hybrid method, combining independent component analysis (ICA) and SEM, which is capable of deriving functional connectivity in an exploratory manner without the need of a prior model is introduced. The spatial ICA (SICA) derives independent neural systems or sources involved in task-related brain activation, while an automated method based on the SEM finds the structure of the connectivity among the elements in independent neural systems. Unlike second-order approaches used in earlier studies, the task-related neural systems derived from the ICA provide brain connectivity in the complete statistical sense. The use and efficacy of this approach is illustrated on two fMRI datasets obtained from a visual task and a language reading task.     

电液比例阀在水轮机液压伺服系统中的应用

电液比例阀是阀内比例电磁铁根据输入的电压信号产生相应动作,使工作阀阀芯产生位移,阀口尺寸发生改变并以此完成与输入电压成比例的压力、流量输出的元件。由于电液比例阀具有形式种类多样,容易组成使用电气及计算机控制的各种电液系统,控制精度高,安装使用灵活以及抗污染能力     

盛钢桶铝锆碳滑板的研究与生产

通过研究,在盛钢桶用铝锆碳滑板的生产过程中,调整了ZrO2的加入量,添加了复合抗氧化剂,使滑板具用较高的强度和抗氧化性能,提高了滑板的使用寿命.     

离子注入半导体的快速热退火与SOI技术

自1977年以来,为了摸索离子注入半导体的新退火方法,各国学者进行了大量的研究工作。这种努力是从激光退火的研究开始的。激光与半导体材料相互作用的研究,已派生出若干很有生命力的应用项目,其中,快速热退火、SOI(Semiconductor on Insulator)技术等已显示了重要的应用前景,并正在走向实用化。     

Adiabatic shear bands on the titanium side in the titanium/mild steel explosive cladding interface: Experiments, numerical simulation, and microstructure evolution

The microstructure and microtexture in adiabatic shear bands (ASBs) on the titanium side in the titanium/mild steel explosive cladding interface are investigated by means of optical microscopy, scanning electron microscopy/electron backscattered diffraction (SEM/EBSD), and transmission electron microscopy (TEM). Highly elongated subgrains and fine equiaxed grains with low dislocation density are observed in the ASBs. Microtextures (25 deg, 75 deg, 0 deg), (70 deg, 45 deg, 0 deg), and (0 deg, 15 deg, 30 deg) formed within the ASBs suggest the occurrence of the recrystallization. The grain boundaries within ASBs are geometrically necessary boundaries (GNBs) with high angles. Finite element computations are performed to obtain the effective strain and temperature distributions within the ASBs under the measured boundary conditions. The rotation dynamic recrystallization (RDR) mechanism is employed to describe the kinetics of the nanograins’ formation and the recrystallized process within ASBs. During the deformation time (about 5 to 10 μs), the following processes take place: dislocations accumulate to form elongated cell structures, cell structures break up to form subgrains, and subgrains rotate and finally form recrystallized grains. The small grains within ASBs are formed during the deformation and do not undergo significant growth by grain boundary migration after deformation.     

广水市:一盘棋规划 "两线一片"推进

广水市位于湖北省东北部，地处大别山与桐柏山交汇处南麓，地跨长江、淮河两大流域，国土面积2647km^2,是湖北省38个山区县市之一。     

V. Yeast sequencing reports. Identification of a gene encoding a new Ypt/Rab-like monomeric G-protein in Saccharomyces cerevisiae

A Saccharomyces cerevisiae sequence cloned by serendipity was found to encode a protein that is a new member of the Ypt/Rab monomeric G-protein family. This sequence shows high homology to the yeast genes SEC4 and YPT1 and, like SEC4 and YPT1, is essential for viability. The sequence was localized to chromosome V based upon hybridization to pulse-field gel-separated yeast chromosomes. The sequence has been deposited in the GenBank data library under Accession Number L17070.     

Characterization of Al-doped n-type ZnSe prepared under a zinc-rich growth condition by low-pressure organometallic chemical vapor deposition

High conductivity n-type ZnSe with = 0.01 ωcm and n = 2.4 × 10¹⁸ cm⁻³ is obtained on (100) GaAs substrates by low pressure organometallic chemical vapor deposition. The 14 meV full width at half maximum of the 77 K photoluminescence near-band-edge emission shows a high quality of as-grown Al-doped ZnSe epilayers. With a suitable Al doping level, a strong photoluminescence intensity of near-band-edge emission is obtained. The behavior of near-band-edge emission and of self-activated emission related to the incorporation of aluminum are discussed in this paper.