Visual Cryptography Based on an Interferometric Encryption Technique

This paper presents a new method for a visual cryptography scheme that uses phase masks and an interferometer. To encrypt a binary image, we divided it into an arbitrary number of slides and encrypted them using an XOR process with a random key or keys. The phase mask for each encrypted image was fabricated under the proposed phase‐assignment rule. For decryption, phase masks were placed on any path of the Mach‐Zehnder interferometer. Through optical experiments, we confirmed that a secret binary image that was sliced could be recovered by the proposed method.     

Routing Protocol for Heterogeneous Hierarchical Wireless Multimedia Sensor Networks

Recently, wireless multimedia sensor networks (WMSNs) have emerged as one of the most important technologies, driven by the development of powerful multimedia device such as CMOS. WMSNs require several factors such as resource constraints, specific QoS, high bandwidth and so on. In this paper, we propose a hierarchical heterogeneous network model based routing protocol for WMSNs. In our proposal, proposed network model is classified into monitoring class, delivery class and aggregation class. Also we define two kinds of the routing path in order to ensure bandwidth and QoS. In simulation results, we illustrate the performance of our proposal.     

A novel hybrid silica wide-band amplifier covering S+C+L bands with 105-nm bandwidth

We report a novel hybrid optical amplifier covering S+C+L bands with 105-nm total bandwidth using a silica fiber. The principle of amplification is based on the stimulated radiative transition of Er-ions for C-band and on the stimulated Raman scattering for S- and L-band, respectively. In this letter, we analyze the amplification characteristics for two types of active fiber mediums through numerical simulation. One is a silica fiber configured with Er-doped cladding and Ge-doped core and the other is a medium consisting of Er-doped fiber and dispersion-compensating fiber. By optimizing parameters such as fiber length and pump power, we newly achieve wide-band amplification with 105-nm bandwidth showing a flat gain characteristic over the entire S+C+L bands.     

Suppression of Ge–O and Ge–N bonding at Ge–HfO2 and Ge–TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO₂ and TiO₂, on plasma-nitrided Ge(1 0 0) substrates, and Si(1 0 0) substrates with ultra-thin (0.8 nm) plasma-nitrided Si suboxide, SiO_x, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K₁ and N K₁ edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.     

Growth of tin whiskers for lead-free plated leadframe packages in high humid environments and during thermal cycling

Growth behavior of tin whiskers from pure tin and tin–bismuth plated leadframe (LF) packages for elevated temperature and high humidity storages and during thermal cycling was observed. In the storage at 60 °C/93% relative humidity (RH) and 85 °C/85%RH the galvanic corrosion occurred at the outer lead toes and shoulders where the base LF material is exposed, forming tin oxide layers of SnO₂. The corroded layers spread inside the film and formed whiskers around the corroded islands. Many whiskers were observed to grow from grain boundaries for the Fe–42Ni alloy (alloy42) LF packages. It was confirmed that the corrosion tends to occur on the side surfaces of outer leads adjacent to the mold flash. The contribution of ionic contaminants in epoxy mold compound (EMC) to the corrosion was not identified. During thermal cycling between −65 °C and +150 °C whiskers grew out of as-deposited grains for pure tin-plated alloy42 LF packages and they grew linearly with an increase of number of cycle. Growth mechanisms of the whiskers from grain boundaries and as-deposited grains were discussed from the deformation mechanism map for tin and mathematical calculation with a steady-state diffusion model.     

Development and Simulation of Sulfur‐doped Graphene Supported Platinum with Exemplary Stability and Activity Towards Oxygen Reduction

Sulfur‐doped graphene (SG) is prepared by a thermal shock/quench anneal process and investigated as a unique Pt nanoparticle support (Pt/SG) for the oxygen reduction reaction (ORR). Particularly, SG is found to induce highly favorable catalyst‐support interactions, resulting in excellent half‐cell based ORR activity of 139 mA mg_Pt ^?1 at 0.9 V vs RHE, significant improvements over commercial Pt/C (121 mA mg_Pt ^?1) and Pt‐graphene (Pt/G, 101 mA mg_Pt ^?1). Pt/SG also demonstrates unprecedented stability, maintaining 87% of its electrochemically active surface area following accelerated degradation testing. Furthermore, a majority of ORR activity is maintained, providing 108 mA mg_Pt ^?1, a remarkable 171% improvement over Pt/C (39.8 mA mg_Pt ^?1) and an 89% improvement over Pt/G (57.0 mA mg_Pt ^?1). Computational simulations highlight that the interactions between Pt and graphene are enhanced significantly by sulfur doping, leading to a tethering effect that can explain the outstanding electrochemical stability. Furthermore, sulfur dopants result in a downshift of the platinum d‐band center, explaining the excellent ORR activity and rendering SG as a new and highly promising class of catalyst supports for electrochemical energy technologies such as fuel cells.     

Equalization digital on-channel repeater in the single frequency networks

Digital On-Channel Repeater (DOCR) can be used for Single Frequency Networks (SFN's). It is much simple and low cost compared to Distributed Transmitter which needs Studio to Transmitter Link (STL). However, traditional DOCR has one of those defects such as a power limit, a long time system processing delay or a poor output signal quality. In order to overcome all of those defects, we introduce Equalization DOCR (EDOCR) which regenerates the original 8-VSB output signal with relatively short time system processing delay. Lab. and Field test results show that the EDOCR can eliminate the loop-back signal up to 5.5 dB with 5.5 /spl mu/s system processing delay. By using EDOCR, we can save spectrum resources and extend coverage areas.     

Parallel optical transmitter module using angled fibers and a V-grooved silicon optical bench for VCSEL array

We propose an advanced structure of optical subassembly (OSA) for packaging of the vertical-cavity surface-emitting laser (VCSEL) array, using (111) facet mirror of the V-groove ends formed in a silicon optical bench (SiOB) and angled fiber apertures. The feature of our OSA can provide a low optical crosstalk between neighboring channels, a low feedback reflection, and a large misalignment tolerance along the V-groove. We describe the optimized design of fiber angle, VCSEL position, and fiber position. The fabricated OSA structure consists of 12 channels of angled fiber array, 54.7/spl deg/ V-grooves, Au-coated mirrors on (111) end facet of the V-grooves, and flip-chip-bonded VCSEL array on a SiOB. In this structure, the beam emitted from the VCSEL is deflected at the 54.7/spl deg/ mirror of (111) end facet and propagated into the angled fiber. The angled fiber array was polished by 57/spl deg/. Fabricated OSAs showed a coupling efficiency of 30%-50% that is 25 times larger than that obtained from an OSA with a vertically flat fiber array. Our OSA showed large misalignment tolerance of about 90 /spl mu/m along the longitudinal direction in the V-groove. We fabricated a parallel optical transmitter module using the OSA and demonstrated 12 channels /spl times/2.5 Gb/s data transmission with a clear eye diagram.     

Highly Customizable All Solution–Processed Polymer Light Emitting Diodes with Inkjet Printed Ag and Transfer Printed Conductive Polymer Electrodes

Inkjet and transfer printing processes are combined to easily form patterned poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films as top anodes of all solution–processed inverted polymer light emitting diodes (PLEDs) on rigid glass and flexible plastic substrates. An adhesive PEDOT:PSS ink is formulated and fully customizable patterns are obtained using the inkjet printing process. In order to transfer the patterned PEDOT:PSS films, adhesion properties at interfaces during multistep transfer printing processes are carefully adjusted. The transferred PEDOT:PSS film on the plastic substrates shows not only a sheet resistance of 260.6 Ω/□ and a transmittance of 92.1% at 550 nm wavelength but also excellent mechanical flexibility. The PLEDs with spin‐coated functional layers sandwiched between the transferred PEDOT:PSS top anodes and inkjet‐printed Ag bottom cathodes are fabricated. The fabricated PLEDs on the plastic substrates show a high current efficiency of 10.4 cd A^?1 and high mechanical stability. It is noted that because both Ag and PEDOT:PSS electrodes can be patterned with a high degree of freedom via the inkjet printing process, highly customizable PLEDs with various pattern sizes and shapes are demonstrated on the glass and plastic substrates. Finally, with all solution process, a 5 × 7 passive matrix PLED array is demonstrated.