Contention-conscious transaction ordering in multiprocessor DSP systems

This paper explores the problem of efficiently ordering interprocessor communication (IPC) operations in statically scheduled multiprocessors for iterative dataflow graphs. In most digital signal processing (DSP) applications, the throughput of the system is significantly affected by communication costs. By explicitly modeling these costs within an effective graph-theoretic analysis framework, we show that ordered transaction schedules can significantly outperform self-timed schedules even when synchronization costs are low. However, we also show that when communication latencies are nonnegligible, finding an optimal transaction order given a static schedule is an NP-complete problem, and that this intractability holds both under iterative and noniterative execution. We develop new heuristics for finding efficient transaction orders, and perform an extensive experimental comparison to gauge the performance of these heuristics.     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Development of a Continuous Segmented Flow Tubular Reactor and the “Scale‐out” Concept – In Search of Perfect Powders

The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.     

A universal matrix solver for integral-equation-based problems

A new method has been developed for compressing the matrices that occur in most integral-equation-based computer programs. This method is easy to interface with existing computer programs, and allows them to run significantly faster and with significantly less memory. This method applies not only to electromagnetic and acoustic computation, but also to most programs involving a Green's function or any integral equation with a kernel having some smoothness properties. Our numerical computations, running on a high-end personal computer, have achieved compression ratios of fifty times, and compressed inversion of the matrices fifty times faster than by previous methods. For larger problems, solved on high-performance computers, these ratios would improve to about one thousand to one for larger moment method problems.     

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.     

A simple impulsiveness correction factor for control of electromagnetic interference in dynamic wireless applications

The emerging software defined radio technologies will be an enabler for a new generation of dynamic wireless systems. It will also open up the possibility of allocating frequencies in a, more dynamic way than today. From an intersystem-interference point of view, this can cause unforeseen problems to occur due to the increased complexity in such applications. In such applications, a measure indicating whether or not a frequency band is possible to use from an electromagnetic interference point of view, must be found. A simple approach is to use the measured total average interference power within the receiver band. Since the interference impact on modern digital communication systems from an interference signal does not only depend on the power but also on the actual waveform of the interference signal, some kind of quality measure of the average-power approach would be convenient to use. In this paper, we introduce a simple quality measure of the average-power approach so that a rough adjustment for the interference-waveform properties can be done.     

Quadrature Mismatch Shaping for Digital-to-Analog Converters

Quadrature sigma-delta analog-to-digital converters require a feedback path for both the I and the Q parts of the complex feedback signal. If two separate multibit feedback digital-to-analog converters (DACs) are used, mismatch among the unit DAC elements leads to additional mismatch noise in the output spectrum as well as an I/Q imbalance. This paper proposes new quadrature bandpass (QBP) mismatch shaping techniques. In our approach, the I and Q DACs are merged into one complex DAC, which leads to near-perfect I/Q balance. To select the unit DAC elements of the complex multibit DAC, the well-known butterfly shuffler and tree structure are generalized towards a complex structure, and necessary constraints for their correct functioning are derived. Next, a very efficient first-order QBP shaper implementation is proposed. Finally, the newly presented complex structures are simulated to prove their effectiveness and are compared with each other with respect to performance