High-Tg porous polyimide films with low dielectric constant derived from spiro-(adamantane-2,9′(2′,7′-diamino)-fluorene)

Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high-performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl-adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross-sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass-transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl-adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as-prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47313.     

Small‐Sized High‐Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet

This letter presents a small‐sized, high‐power single‐pole double‐throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow‐wave characteristic, the DGS is used for the quarter‐wave (°/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt‐connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt‐type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.     

Fenton氧化法去除酱油生产废水中焦糖色素的研究

着重考察了Fenton试剂对水中焦糖色素降解的影响因素.从试验中得出,这些影响因素包括pH、催化剂的投加方式、催化剂与氧化剂的化学计量数以及反应时间等.Fenton反应中,pH4的条件下处理效果最好,反应进行40min时去除率达到90%.     

Study on Hydrocracking of VGO Derived from Kazakhstan-Russian Mixed Crude

1 Introduction With the successful completion of the construction of the China-Kazakhstan oil pipeline the refinery at Dushanzi Pet- rochemical Company will process the Kazakhstan-Russian mixed crude at full steam starting 2007. The high sulfur, nitro- gen and heavy metals contents in the Kazakhstan-Russian mixed crude would have a serious impact on the secondary processing units of the Dushanzi refinery, in particular on the distillate hydrocracking unit, which mainly operates on vacuum g…     

新会计准则对会计准则质量的影响

年初,国家财政部发布了新的会计准则,这是中国会计准则建设史上的重大事件。新会计准则体现出会计准则质量的几个重要标准,提高了中国会计准则的质量。同时,分析新会计准则质量方面仍存在的一些不足。     

应用API 581对输气站场进行定量风险评价

目前专门针对输气站场的风险评价方法还不多，现有的手段也只是根据国家法律法规得出定性的评价结果，然后按照评价结果对照得出整改方案。为此，对输气站场的定量风险评价工作提出了一套新方法，得到了定量的和更加客观的风险排序，为管道站场的完整性管理工作提供了有力的支持；并以陕京输气管道榆林压气站为例，应用美国石油学会标准API 581（基于风险检测的基本源文件）对站内设施进行了风险评价，计算了站内设备和管线的失效后果、失效概率，得到了定量风险值，进而分析了风险值产生差异的原因。最后，针对我国输气管道风险评估工作提出了看法和建议。     

氢型丝光沸石催化剂催化α-蒎烯合成α-松油醇

在相转移助剂苄基三乙基氯化铵(BTEAC)存在下,以氢型丝光沸石(HM)为催化剂,原料α-蒎烯经开环、重排及水合反应一步法合成了α-松油醇。研究了各种因素对α-蒎烯转化率及α-松油醇收率的影响,采用5因素4水平L16(45)进行了正交实验,得出最佳的工艺条件:反应温度80℃,w(BTEAC)=15%,m(HM)∶m(α-蒎烯)=0.6,反应时间40h,m(乙酸乙酯)∶m(α-蒎烯)=0.9。在此条件下,α-蒎烯转化率为75.2%,α-松油醇收率为42.0%。用气相色谱-质谱联用仪对反应产物进行分析,共鉴定出14种化合物,主要成分为α-松油醇、α-蒎烯、柠檬烯、桉叶油素、异松油烯、龙脑等。实验得到的α-松油醇具有光学活性,旋光值[α]=+61°,同时香气纯正,可用于制作香料。     

TUD-DNS3脱硝助剂在催化裂化装置的工业应用

TUD-DNS3脱硝助剂在中韩（武汉）石油化工有限公司1号催化裂化装置上进行了工业应用。结果表明：针对两段再生工艺，当系统中助剂占总催化剂藏量的质量分数为2.6%时，烟气脱硫装置外排污水中的氨氮质量浓度由加剂前的100 mg/L下降至40 mg/L以内；助剂的加入降低了CO焚烧炉的炉膛温度，有利于烟气的合格排放，并对装置操作、产品分布及汽油、柴油产品质量无不良影响。     

一维长序DFT的协处理阵列结构设计与实现

文章针对一维长序DFT计算问题，分析其计算结构以及算法的并行性，提出一种阵列协处理结构．并分析这种协处理机结构上DFT计算的组织及具体实施算法步骤和方法，并对这种协处理阵列结构上运行的DFT进行复杂性分析。这对计算DFT专用集成协处理结构芯片开发，提高专用嵌套系统性能非常实用。     

Thermo-Sensitive Ba0.64Sr0.36TiO3 Thin Film Capacitors for Dielectric Type Uncooled Infrared Sensors

Ba_0.64Sr_0.36TiO₃ (BST) thin films are prepared on Pt/Ti/SiO₂/Si₃N₄/SiO₂/Si substrates by a sol-gel method. Thermo-sensitive BST thin film capacitors with a Metal-Ferroelectrics-Metal (M-F(BST)-M) structure are fabricated as the active elements of dielectric type uncooled infrared sensors. XRD are employed to analyze the crystallographic structures of the films. AFM observations reveal a smooth and dense surface of the films with an average grain size of about 35 nm. Rapid temperature annealing (RTA) process is a very efficient way to improve crystallization quality. The preferable annealing temperature is 800°C for 1 min. The butterfly shaped C-V curves of the capacitors indicate the films have a ferroelectric nature. The dielectric constant and dielectric loss of the films at 100 kHz are 450 and 0.038, respectively. At 25°C, where the thermo-sensitive capacitors work, the temperature coefficient of dielectric constant (TCD) is about 5.9 %/°C. These results indicate that the capacitors with sol-gel derived BST thin films are promising to develop dielectric type uncooled infrared sensors.