Growth structure investigation of MgF2 and NdF3 films grown by molecular beam deposition on CaF2(111) substrates

The growth structure of MgF₂ and NdF₃ films grown on polished CaF₂(111) substrates deposited by molecular beam deposition has been investigated using transmission electron microscopy (TEM) of microfractographical and surface replications as well as cross-sectional TEM, atomic force microscopy, packing density, and absorption measurements. It has been shown that by taking advantage of ultrahigh vacuum environments and a special stratification property of MgF₂ and NdF₃ films, the preparation of nanocrystalline films of high packing density and low optical absorption is possible at a substrate temperature of 425 K.     

有自聚焦功能的付里叶计算全息

在制作付里叶计算全息过程中，加入适当的二次位相因子，使此种全息图在相干光照明下就可预定的位置上只再现一个像，省略了过去丙现此种计算全息图必要的付里叶透镜，并且使两个互为共轭像分离，从而拓宽了此种计算全息的应用领域，实验结果与理论分析相符。     

Statistical computer-aided design for microwave circuits

A useful methodology for microwave circuit design is presented. A statistical technique known as Design of Experiments is used in conjunction with computer-aided design (CAD) tools to obtain simple mathematical expressions for circuit responses. The response models can then be used to quantify response trade-offs, optimize designs, and minimize circuit variations. The use of this methodology puts the designer's intelligence back into design optimization while making “designing for circuit manufacturability” a more systematic and straightforward process. The method improves the design process, circuit performance, and manufacturability. Two design examples are presented in context to the new design methodology     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。     

The on-line texture analysis of steel strips

A new on-line texture-analyzing system and its application to nondestructive r value determination is discussed. In addition to providing a brief theoretical background and describing the instrumental set-up, the article presents off-line measurements with this equipment and demonstrates the high accuracy of the determined r-values. A special feature of the unit is the possibility to simultaneously measure the most important r values—r₀, r₄₅, r₉₀, and r_m.     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

Transition metal- chalcogen systems XI: the platinum- selenium phase diagram

The platinum-selenium phase diagram was investigated by differential thermal analysis, metallography, and X-ray powder diffraction methods. The two previously known intermediate phases, Pt₅Se₄ and PtSe₂, both melt congruently: Pt₅Se₄ at ∼1070 °C and PtSe₂ (under its own vapor pressure) at 1245 ± 10 °C. Pt₅Se₄ forms a eutectic with Pt at 1065 ± 2 °C and ∼42 at % Se and another one with PtSe₂ at 1067 ± 2 °C and somewhat below 45 at.% Se. On cooling, Pt and PtSe₂ form a metastable eutectic at 1037 ± 2 °C and ∼43 at % Se. Between PtSe₂ and Se, a degenerate eutectic was found at 221 °C, which also indicates negligible solubility of platinum in solid selenium.