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21.
中国古陶艺制品造型,釉色,装饰等艺术符号都与每时期的阶段性精神和物质生活相联系,但在"现代艺术"文化认识领域中,往往从理论思维角度把陶艺实用目的的物质性排斥在文化范畴之外。艺术常常强调物质的观赏性,而陶艺的实用功能就是这种文化类型的主体,陶艺的文化性和功能性,具有实用和审美文化的高度叠合,永久地承载着实用功能和精神功能两大内容。  相似文献   
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23.
大门小品建筑属多项目综合性工程。本文作者从管理者的角度 ,通过对公司大门及附属工程施工质量控制的总结 ,说明了质量控制应贯穿于工程施工的全过程  相似文献   
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25.
简要介绍了鞍钢现有人造富矿生产能力,分析了鞍钢生产1600万t/a生铁所需要的炉料数量、品种和质量,并提出了解决炉料缺口的方法和措施。  相似文献   
26.
The SSC GEM silicon Central Tracker design incorporated 18-cm long single-sided AC-coupled silicon microstrip ladders. Compared to the 12-cm long ladders considered in the preliminary stages of the tracker design, the 18-cm long ladders have the advantage of reduced cost, channel count and overall power consumption, and led to a simplified tracker assembly. However, such long ships also present the challenge of maintaining satisfactory performance. The increased capacitance and series resistance contribute to lower signal-to-noise ratios, longer time walk, higher power consumption per channel and increased probability of crosstalk to neighboring channels. In this paper, an accurate method to calculate the geometric capacitance of the AC-coupled microstrips is presented and the calculated results are compared with measurements, SPICE simulations are performed to predict the noise, the extent of interstrip capacitive coupling and the dispersion of the detector signal due to the finite series resistance of the metal strips and the long length of the detector. The influence of the preamplifier current and the shaping time on the signal and noise levels is also presented. The study concludes that the 18-cm long ladders can successfully satisfy the performance goals of the GEM silicon Central Tracker  相似文献   
27.
Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities  相似文献   
28.
In this paper, we investigate the problem of determining the optimal bandwidth allocation for a Dynamic Bandwidth Allocation Scheme (DBAS). The objective is to minimize the total amount of bandwidth required to satisfy the Quality of Service (QoS) requirements of all traffic streams. It is shown that when the performance functions satisfy a certain number of conditions, there exists a unique optimal bandwidth allocation such that, for each traffic stream, either its QoS is just satisfied or its QoS is over-satisfied and it is allocated zero bandwidth. Such an allocation is said to be efficient. It is also shown that there exists a unique efficient allocation in the entire feasible region. An iterative algorithm is developed to compute the efficient allocation employing its special properties. Numerical examples are presented to demonstrate how the algorithm works. Future extensions of this work are also discussed.Partially supported by NSERC of Canada through grants OGP14020 and STRIN-200.  相似文献   
29.
The oxygen absorption process in highly aligned YBa2Cu3Ox samples in air and in pure oxygen was studied at several constant temperatures. The process can be expressed in two steps, a chemical reaction controlled step and a diffusion controlled step. The kinetic equations are as follows respectively:
(1 − at) ln(1 − at) + at = kDt

The activation energy was calculated using an Arrhenius equation. The technical conditions of heat treatment for oxygen absorption of highly aligned YBa2Cu3Ox crystals are discussed.  相似文献   

30.
A technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO2 film with a lower P-etch rate shows a dense structure. LPD SiO2 also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO 2 as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)  相似文献   
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