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1.  The hot deformation of corrosion-resistant steels of the ferritic, austenitic, and austenitic—ferritic classes in the 900–1100°C interval at rates sec–1 results in dynamic recrystallization.
2.  Various types of substructures are formed in the initial stages of plastic flow, depending on the deformation conditions and the type of crystal lattice of the steels, and, consequently, different mechanisms of dynamic recrystallization are realized.
3.  Substructure formation in the initial grains and gradual transformation of low- to high-angle boundaries are the mechanisms responsible for the formation of recrystallized grains in the ferritic steels over the entire temperature region investigated, and in the austenitic-class steel at high temperatures.
Institute of Problems of Metal Superplasticity, Ufa. Translated from Metallovedenie i Termicheskaya Obrabotka Metallov, No. 5, pp. 19–23, May, 1992.  相似文献   
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A method is proposed for determining the transparency of the potential barrier at the surface of the emitter in a thermionic-emission converter by means of measured arc voltage-current characteristics. That method can also be used to determine the barrier transparency for the collector by measuring the voltage-current characteristics when the current flows from the collector to the emitter. The method can be used to track the variation in the reflection coefficient from the plasma for the emission electrons. Kurchatov Institute Russian Scientific Center. Translated from Atomnaya énergiya, Vol. 86, No. 2, pp. 107–113, February, 1999.  相似文献   
108.
Superplastic behavior of a 7055 aluminum alloy   总被引:1,自引:0,他引:1  
It is shown that a high strength 7055 aluminum alloy with partially recrystallized initial structure exhibits superplastic behavior in the temperature interval 400–490 °C within a wide strain rate range from 8.3×10−5 to 3.3×10−2 s−1. Maximum total elongation of about 960% and strain rate sensitivity coefficient, m, of 0.6 were obtained at a temperature of 450 °C and a strain rate of 3.3×10−4 s−1.  相似文献   
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We report on fabrication and studies of composite heterostuctures consisting of an Al0.55Ga0.45N/Al0.8Ga0.2N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence of a substrate temperature varied between 320 and 700ºC on the size and density of the deposited Al nanoislands is evaluated. The effect of Al nanoislands on decay kinetics of the quantum well middle-ultraviolet photoluminescence has been investigated by time resolved photoluminescence. The samples with the maximum density of Al nanoislands of 108 cm–2 and lateral dimensions in the range of 100–500 nm demonstrated shortening of the photoluminescence lifetime, induced by interaction of the emitting quantum well and the plasmonic metal particles.

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