Spectroscopic studies on the rare-earth vanadites

The nature of the V/1bO/1bV interaction of the perovskite type rare-earth vanadites were studied by spectroscopic methods. Infrared and ultraviolet analyses revealed that the V/1bO bond length became shorter and that the V/1bO bond strength increased, as a function of the atomic number of lanthanide elements in LnVO₃. Judging from the x-ray fluorescent spectra of oxygen-K_α, the energy level of O^2? (p_π) orbitals of the heavier rare-earth vanadites was lower than that of the lighter rare-earth vanadites.     

Electrical properties of ferromagnetic Gd3−xS4 near its Curie temperature

Nonstoichiometric $\text{Gd}{}_{\mathrm{<mtext>3?</mtext><mtext>x</mtext>}}\text{S}{}_4\text{(0 <}\text{x}\text{<}\text{1}\text{3}\text{)}$, which exhibits a metallic behavior, was obtained by heating an insulating Gd₂S₃ at various temperatures under a vacuum. Electrical and magnetic properties of the samples obtained have been investigated from 4.2 K to 300 K. A maximum in resistivity was observed in the curve of resistivity vs. temperature. The temperature T_P, at which the maximum emerged, was very close to the Curie temperature T_C for the sample. An increase in resistivity at T_P, Δ_?, is proportional to ?_P exp ($\text{E}\text{k}{}_{\mathrm{B}}\text{T}{}_{\mathrm{P}}$), where ?_P is the resistivity obtained by the extrapolation from the linear portion to T_P in the ? vs. T curve. Using the relationship obtained, a model based on the formation of magnetic polaron was proposed for this system.     

Microassembly of semiconductor three-dimensional photonic crystals

Electronic devices and their highly integrated components formed from semiconductor crystals contain complex three-dimensional (3D) arrangements of elements and wiring. Photonic crystals, being analogous to semiconductor crystals, are expected to require a 3D structure to form successful optoelectronic devices. Here, we report a novel fabrication technology for a semiconductor 3D photonic crystal by uniting integrated circuit processing technology with micromanipulation. Four- to twenty-layered (five periods) crystals, including one with a controlled defect, for infrared wavelengths of 3-4.5 microm, were integrated at predetermined positions on a chip (structural error <50 nm). Numerical calculations revealed that a transmission peak observed at the upper frequency edge of the bandgap originated from the excitation of a resonant guided mode in the defective layers. Despite their importance, detailed discussions on the defective modes of 3D photonic crystals for such short wavelengths have not been reported before. This technology offers great potential for the production of optical wavelength photonic crystal devices.     

Synthesis of the Bi-2222 Compounds of Bi–Sr–Ln(Zr)–Cu–O (Ln = Sm,Eu, Gd,and Dy)

Bi-based superconducting compounds with the 2222 structure has been already synthesized in the Bi₂Sr₂- (Ln_1−x Ce _x )₂Cu₂O_10+y (Ln = Sm, Eu, and Gd) systems. One of the characteristics of these compounds is the existence of the fluorite-like (Ln_1−x Ce _x )₂O₂ block between two CuO₅ pyramids in the crystal structure. The tetravalent ions of Ce⁴⁺ are reported to be necessary to stabilize the 2222 structure. Recently, we have discovered that the Bi-2222 phase could be composed in the Bi₂Sr₂(Ln_2−x Zr _x )Cu₂O _z (Ln = Sm, Eu, Gd, and Dy) systems, where Zr⁴⁺ is used as a new tetravalent ion stabilizing the 2222 structure in stead of Ce⁴⁺. In the new system, nearly single 2222 phase samples have been obtained at the nominal composition of x=0.5 (Ln = Sm, Eu, and Gd) and in the range of 0.1≤x≤0.3 (Ln = Dy). Among them, the sample with Ln = Gd has the smallest resistivity at 273 K. But it is a semiconductor, and the conduction process at low temperatures is assumed to be followed by a two-dimensional VRH. The experimental results for the Gd samples with a partial substitution of Pb for Bi in the Bi₂Sr₂(Gd_2−x Zr _x )Cu₂O _z system are also reported.     

Delay-time=code division multi-access in frequency-selective channel

A new hybrid multi-access technique, called delay-time/code division multi-access (DT/CDMA), is proposed. Multiplexing is accomplished in both the delay-time domain and code domain. Delay-time division multiplexing is achieved by assigning different cyclic time delays to the same spreading sequence. At a receiver, frequency-domain equalisation, despreading, and demultiplexing are performed simultaneously in the frequency domain. The bit error rate performance when using the proposed DT/CDMA in a frequency-selective Rayleigh fading channel is evaluated by computer simulation.     

Influence of heat treatment on indium-tin-oxide anodes and copper phthalocyanine hole injection layers in organic light-emitting diodes

Modifications of indium-tin-oxide (ITO) and copper phthalocyanine (CuPc) layers by heat treatment aimed at lowering driving voltage in organic light-emitting diodes (OLEDs) are examined. Significant changes were observed in the surface morphology and carrier injection properties of ITO and CuPc layers after annealing at T = 250 °C for 0-60 min in a glove box. In the case of ITO annealing, although the ITO work function gradually decreased and the surface of the ITO layer became smoother than that of an unannealed ITO layer, we observed an appreciable decrease in the driving voltage with an increase in annealing time. In the case of CuPc annealing, on the other hand, we observed deterioration of the OLED's characteristics. All devices demonstrated an increase in driving voltage due to the pronounced crystallization of the CuPc layer.     

Formation of high-purity organic thin films by gas flow deposition and the effect of impurities on device characteristics

A gas flow deposition (GFD) system was developed to manufacture large-scale organic light-emitting diodes (OLEDs). A N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (α-NPD) thin film with a high purity of 99.97% was obtained using the GFD system. The film properties such as morphology, and electrical and optical characteristics were almost the same as those of films made by conventional vacuum thermal evaporation.     

Highly photostable distributed-feedback polymer waveguide blue laser using spirobifluorene derivatives

In this study, we synthesized the new spirobifluorene derivatives; hexylbiphenyl-spirobifluorene (HBP-Spiro) and triphenylamine-spirobifluorene (TPA-Spiro) and demonstrated the operation of a distributed-feedback polymer waveguide blue laser. In addition, we investigated the optical and lasing properties of spirobifluorene derivatives including photostability. The experimental slope efficiency and the energy threshold of a HBP-Spiro-doped waveguide laser were 3.6% and 1.9 μJ, respectively. An operation lifetime of 27,000 shots was obtained for a pump-pulse duration of 1.2 ns and energy of 3.0 μJ at a wavelength of 355 nm.     

Valence Band Structure of ZnO (1010) Surface by Cluster Calculation

Discrete variational (DV) Xα cluster method has been employed in calculating electronic structures of ZnO. Electronic structures of the bulk and the non-polar surface model clusters are calculated with inclusion of electrostatic potentials in the bulk and near the surface, and the electronic origins of experimental spectra and chemical bonds at the surface are examined in detail. The valence band structure constructed by Zn-3d and O-2p bands is much influenced by electrostatic potentials in ZnO. It is found that the reduction of an electrostatic potential near the surface gives rise to the difference of the valence band structures between in the bulk and at the surface. The calculated density of states at the non-polar surface of ZnO, where the Zn-3d and O-2p bands are more widely separated than in the bulk, is in good agreement with the experimental UPS. In addition, a Zn-O bond at the surface is found to show stronger covalency than that in the bulk, as a result of the change of the valence band structure due to the effect of the electrostatic potential.     

Clinical experience of trabeculotomy for the surgical treatment of aniridic glaucoma

OBJECTIVE: The purpose of this study is to determine the efficacy of initial trabeculotomy in the patient with aniridic glaucoma. DESIGN: Clinical charts were reviewed. PARTICIPANTS: Twenty-nine eyes of 16 patients with aniridia were studied. INTERVENTION: Glaucoma surgery was performed. As an initial procedure, trabeculotomy was performed in 12 eyes, other surgery was performed in 17 eyes (trabeculectomy, 5; goniotomy, 5; other, 7). MAIN OUTCOME MEASURES: Success was defined as an intraocular pressure (IOP) of 21 mmHg or lower, and no further surgery was performed. RESULTS: Ten (83%) of 12 eyes obtained IOP control after first (6 eyes) or second (4 eyes) trabeculotomy with a mean follow-up period of 9.5 years. Five eyes maintained visual acuity of 20/40 to 20/200. No serious complications were found after trabeculotomy. Three (18%) of 17 eyes were controlled with the first glaucoma surgery other than trabeculotomy (goniotomy, trabeculectomy, trabeculectomy combined with trabeculotomy, and Molteno implant). Good IOP control was obtained in 8 (47%) of 17 eyes after several surgeries with a mean follow-up period of 10.4 years. Four of 17 eyes became phthisical. CONCLUSION: This study suggests that trabeculotomy is the preferred initial operation for uncontrolled glaucoma with aniridia.