A new assessment of quality of life (QOL) for cancer patients

A new assessment of quality of life (QOL) was made for cancer patients. The QOL assessment consists of 12 items: pain; nausea; constipation; general fatigue; sleep; eating; activity; a daily life pattern; conversation; treatment acceptability; satisfaction at the present status and family exhaustion. Ranges of scores are one (best) to five (worst). For visual expression of QOL, the author made an original method called "QOL diagram", drawn with a circle which has 12 diverging lines marked five points indicating the score for each item. QOL changes after cancer pain control with either oral or intravenous morphine were examined in 22 adult cancer patients by the QOL assessment. Laxatives and anti-nausea drugs were mostly prescribed at the same time in order to avoid side effects of morphine. QOL was evaluated and recorded by the author through an individual interview with each patient. It was observed that the psychological factors were improved along with pain relief. Although items such as general fatigue, nausea, constipation, sleep and eating did not change considerably at first, they improved well with time in the oral morphine group. On the other hand, there was no marked time-dependent change in the intravenous morphine group. Items such as activity, a daily life pattern and conversation were rather negative than positive. These items seem to be more important to improve QOL of the cancer patients, in particular, whose general status is relatively good. In conclusion, the QOL diagram helped us to follow subtle changes of status and needs of cancer patients. And it enables us to easily assess risks and benefits of the treatment plans including palliative care and home supportive programs. It is designed for both patients and medical staffs to use easily and repeatedly. However, the further evaluation and refinement will be needed to verify validity and reliability of the QOL diagram before a routine clinical application.     

Mode-Hop-Free, Optical Frequency Tunable 40-GHz Mode-Locked Fiber Laser

We have successfully achieved a mode-hop-free, optical frequency tunable 3-ps 40-GHz mode-locked fiber laser by installing an optical etalon in a 6.8-m laser cavity. The laser frequency was continuously tuned over 1 GHz without mode hopping by tuning the etalon peak frequency. The oscillation wavelength was also tuned over 1535-1560 nm by tuning an optical bandpass filter installed in the laser cavity.     

Multiwalled carbon nanotube AFM probes for surface characterization of micro/nanostructures

A multiwalled carbon nanotube (MWNT) probe was used as a scanning probe in an atomic force microscope (AFM) to obtain surface height maps of micro/nano structures. The surface height maps acquired by the MWNT probe are compared with those by a conventional silicon probe on the four samples: silicon ruler, polymer microchannels, silicon nanomembrane and nanocomposite metal particle (MP) tapes. The results of the silicon ruler, microchannels and membrane samples show that the surface height maps by the MWNT probe have a better resolution than those by a conventional silicon tip due to the sharper tip with the larger aspect ratio of the MWNT. A MWNT probe is especially useful to observe surface height maps of the structures that have larger aspect ratio.Financial support for this work was provided by the National Science Foundation (contract no. ECS-0301056). The authors are grateful to Prof. Derek Hansford and Nick Ferrell of the Micro MD laboratory for providing the samples and fruitful discussions, and Imation Corporation for the samples provided. Work by C.V.N. was supported by a NASA contract to ELORET Corporation.     

Diffusion and sorption for carbon dioxide in Kapton at extremely low pressure

Pressure-dependent solubility and diffusion coefficients for carbon dioxide in glassy polymers have been well described using the “dual sorption and transport model.” However, the plastisization effect by high-pressure carbon dioxide seems to promote the pressure dependence of the sorption and transport coefficients. To avoid the relaxation process by the plastization which is superimposed on the diffusion process, the diffusion and sorption of carbon dioxide were measured at extremely low pressure (below 1 cmHg). Linear isotherms observed for CO₂ sorption into Kapton were interpreted in terms of the dual model equation at extremely low pressure. From the permeation curve of the Kapton/CO₂ system, the diffusion and permeation coefficients were obtained according to the usual manner, and both coefficients were independent of pressure. Sorption and transport parameters were obtained from sorption isotherms and average values of the permeation coefficients. The parameters thus obtained were substituted in an approximated dual sorption and transport equations at extremely low pressure and the pressure independence of the diffusion and permeation coefficients were sufficiently reproduced. It is a good technique to experiment at such extremely low pressure when the validity of the dual model is evaluated. © 1998 John Wiley & Sons, Inc. J Appl Polym Sci 69: 1013–1017, 1998     

Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO/sub 2/ stack gate dielectrics

P/sup +/-poly-Si gate MOS transistors with atomic-layer-deposited Si-nitride/SiO/sub 2/ stack gate dielectrics (EOT=2.50 nm) have been fabricated. Similar to the reference samples with SiO/sub 2/ gate dielectrics (T/sub ox/=2.45 nm), clear saturation characteristics of drain current are obtained for the samples with stack gate dielectrics. Identical hole-effective mobility is obtained for the samples with the SiO/sub 2/ and the stack gate dielectrics. The maximum value of hole-effective mobility is the same (54 cm/sup 2//Vs) both for the stack and the SiO/sub 2/ samples. Hot carrier-induced mobility degradation in transistors with the stack gate dielectrics was found to be identical to that in transistors with the SiO/sub 2/ gate dielectrics. In addition to the suppression of boron penetration, better TDDB characteristics, and soft breakdown free phenomena for the stack dielectrics (reported previously), the almost equal effective mobility (with respect to that of SiO/sub 2/ dielectrics) has ensured the proposed stack gate dielectrics to be very promising for sub-100-nm technology generations.     

Local damage to reinforced concrete structures caused by impact of aircraft engine missiles Part 2. Evaluation of test results

Three sets of impact tests, small-, intermediate-, and full-scale tests, have been executed to determine local damage to reinforced concrete structures caused by the impact of aircraft engine missiles. The results of the test program showed that (1) the use of the similarity law is appropriate, (2) suitable empirical formulas exist for predicting the local damage caused by rigid missiles, (3) reduction factors may be used for evaluating the reduction in local damage due to the deformability of the engines, (4) the reinforcement ratio has no effect on local damage, and (5) the test results could be adequately predicted using nonlinear response analysis.     

Automated bias control (ABC) circuit for high-performance VLSIs

A biasing scheme for sensing circuits, namely an automated bias control (ABC) circuit, for high-performance VLSIs is described. The ABC circuit can automatically gear the output level of sensing circuits to the input threshold voltage of the succeeding CMOS converters. The sensing performance can be accelerated with the ABC circuit either by reducing the excessive signal level margin between the sensing circuits and the CMOS converters or by reducing extra stages of signal amplification. Since feedback control of the ABC circuit ensures correct DC biasing even under large process deviations and circuit condition changes, a wider operation margin can also be obtained. Three successful applications of the ABC circuit are reported: a sense amplifier, an address transition detector (ATD), and an ECL-CMOS input buffer. A 64-kb BiCMOS SRAM employing the proposed sense amplifier and the ATD has been fabricated with a 0.8-μm 9-GHz BiCMOS technology. The SRAM has an address access time of 4.5 ns     

Intersubband absorption saturation in InGaAs-AlAs-AlAsSb coupled quantum wells

This paper gives saturation (switching) energy (I/sub S/) estimates in an all-optic switch material based on absorption saturation in InGaAs-AlAs-AlAsSb coupled-double quantum wells (cDQWs). A model based on density matrix theory for a 4-level system is used to simulate the pulsed excitation conditions of the experiment in the communication wavelength region. The theoretical estimates are compared with experimentally determined values. A comparison of the I/sub S/ in two different cDQWs (one with an indium composition in the well of about 53% and without an AlAs stopping layer at the well-barrier interface and another with 72% indium and an AlAs stopping layer) clearly shows that the samples with high indium content are of a better quality compared to those with lattice-matched indium composition (53%). An order-of-magnitude reduction in the I/sub S/ in an all-optic switch based on cDQWs with high indium content is reported.     

Evaluation of grouting in tunnel lining using impact-echo

The shield tunneling method is commonly used for tunnel excavation. After the excavation, curved reinforced concrete members are used to support the surrounding ground/rock and seal the tunnel. Grouting is performed to provide adhesion between the concrete members and the ground. The assessment of the grouting quality by pull-out tests and core sampling is destructive, time-consuming and expensive. In the present case, impact-echo was applied as a means of non-destructive and time-effective evaluation. Excitation was conducted by an impact hammer on the surface of several concrete plates and the reflection was acquired by a low frequency accelerometer. Combined use of time domain characteristics, spectral content and wavelet transform reveal the effectiveness of grouting and indicate that impact echo is valuable for quick and reliable assessment of grouting in such cases.     

Integration of interdigital-gated plasma wave device for proximity communication system application

Interdigital-gated AlGaAs/GaAs high-electron-mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room temperature should produce negative conductance characteristics when the carrier drift velocity slightly exceeds the phase velocity of EM waves. S-parameter reflection measurements were carried out at room temperature for a frequency range from 1 to 20 GHz and a drastic change in conductance was observed at 5 and 10 GHz with the increase of drain–source voltage. Large conductance change over 1000 mS/mm was obtained and it showed a peak at a certain frequency. The peak position could be controlled by changing the pitch size of the interdigital gates. These characteristics can be used for high-frequency applications such as high-speed switching devices although a feature size of our interdigital-gated HEMT device is much larger than conventional HEMT device.