High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated to study the feasibility of higher performance operation. Nitrogen concentration in gate oxynitride was optimized to reduce gate current I/sub g/ and to prevent boron penetration in the pFET. The thermal budget in the middle of the line (MOL) process was reduced enough to realize shallower junction depth in the S/D extension regions and to suppress gate poly-Si depletion. Finally, the current drives of 676 /spl mu/A//spl mu/m in nFET and 272 /spl mu/A//spl mu/m in pFET at V/sub dd/=0.85 V (at I/sub off/=100 nA//spl mu/m) were achieved and they are the best values for 35 nm gate length CMOS reported to date.     

Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Low-temperature (290°C) area-selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of an ultra-shallow sidewall (50 nm) GaAs tunnel junction. Fabricated tunnel junctions have shown a record peak current density up to 35,000 A/cm². It is shown that the tunnel junction characteristics are strongly dependent on the sidewall orientation and the AsH₃ surface treatment conditions just prior to regrowth. The effects of AsH₃ surface treatment are discussed in view of the control of surface stoichiometry.     

基于整体退火遗传算法的低功耗极性转换

针对n变量逻辑函数在不同极性下所对应REED-MULLER(RM)电路功耗和面积不问的特点,对信号几率传递算法、多输入XOR/AND(异或/与)门的低功耗分解算法和多成份极性转换算法进行了深入研究,成功地将整体退火遗传算法(whole annealing genetic algorithm,WAGA)应用于RM电路最佳极件的搜索.通过对8个MCNC Benchmark测试表明,算法搜索到的最佳极性,其所对应RM电路的SYNOPSYS综合结果,与极性0时相比,功耗、面积和最大延时的平均节省分别达到了77.2%,62.4%和9.2%.     

DNA Computing Boosted by a Cationic Copolymer

The huge information storage capability of DNA and its ability to self‐assemble can be harnessed to enable massively parallel computing in a small space. DNA‐based logic gates are designed that rely on DNA strand displacement reactions; however, computation is slow due to time‐consuming DNA reassembly processes and prone to failure as DNA is susceptible to degradation by nucleases and under certain solution conditions. Here, it is shown that the presence of a cationic copolymer boosts the speed of DNA logic gate operations that involve multiple and parallel strand displacement reactions. Two kinds of DNA molecular operations, one based on a translator gate and one on a seesaw gate, are successfully enhanced by the copolymer without tuning of computing conditions or DNA sequences. The copolymer markedly reduces operation times from hours to minutes. Moreover, the copolymer enhances nuclease resistance.     

5V转换成-10V的简单电路

典型开关式电容器充电泵不需要电感器，因此容易设计．且能将正电压加倍及将正电压转换成一个等效负电压。但在某些应用中．只有正电源可用．且电源系统必须产生一个幅度比正电源电压幅度更大的负电压。图1所示电路可将其输入电压反相的同时将所得负电压加倍。     

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

The tunnel injection transit time (TUNNETT) diodes with p⁺p⁺n⁺n⁻n⁺ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p⁺n⁺) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth.     

Properties of Bi-doped PbTe layers grown by liquid phase epitaxy under controlled Te vapor pressure

Effects of Bi doping in PbTe liquid-phase epitaxial layers grown by the temperature difference method under controlled vapor pressure (TDM-CVP) are investigated. For Bi concentrations in the solution, x_Bi, lower than 0.2 at.%, an excess deep-donor level (activation energy E_d≈0.03–0.04 eV) appears, and Hall mobility is low. In contrast, for x_Bi>0.2 at.%, Hall mobility becomes very high, while carrier concentration is in the range of 10¹⁷ cm⁻³. Inductive coupled plasma (ICP) emission analysis shows that, for x_Bi=1 at.%, Bi concentration in the epitaxial layer is as high as N_Bi=2.3–2.7 × 10¹⁹ cm⁻³. These results indicate that Bi behaves not only as a donor but also as an acceptor, and the nearest neighbor or very near donor-acceptor (D-A) pairs are formed, so that strong self-compensation of Bi takes place. Carrier concentration for highly Bi-doped layers shows a minimum at a Te vapor pressure of 2.2 × 10⁻⁵ torr for growth temperature 470°C, which is coincident with that of the undoped PbTe.     

Microfluidic Spinning of Cell‐Responsive Grooved Microfibers

Engineering living tissues that simulate their natural counterparts is a dynamic area of research. Among the various models of biological tissues being developed, fiber‐shaped cellular architectures, which can be used as artificial blood vessels or muscle fibers, have drawn particular attention. However, the fabrication of continuous microfiber substrates for culturing cells is still limited to a restricted number of polymers (e.g., alginate) having easy processability but poor cell–material interaction properties. Moreover, the typical smooth surface of a synthetic fiber does not replicate the micro‐ and nanofeatures observed in vivo, which guide and regulate cell behavior. In this study, a method to fabricate photocrosslinkable cell‐responsive methacrylamide‐modified gelatin (GelMA) fibers with exquisite microstructured surfaces by using a microfluidic device is developed. These hydrogel fibers with microgrooved surfaces efficiently promote cell encapsulation and adhesion. GelMA fibers significantly promote the viability of cells encapsulated in/or grown on the fibers compared with similar grooved alginate fibers used as controls. Importantly, the grooves engraved on the GelMA fibers induce cell alignment. Furthermore, the GelMA fibers exhibit excellent processability and could be wound into various shapes. These microstructured GelMA fibers have great potential as templates for the creation of fiber‐shaped tissues or tissue microstructures.     

Approximate Graphic Method for Solving Fermi Level and Majority Carrier Density of Semiconductors with Multiple Donors and Multiple Acceptors

In this work we present a generic approximate graphic method for determining the equilibrium Fermi level and majority carrier density of a semiconductor with multiple donors and multiple acceptors compensating each other. Simple and easy-to-follow procedures of the graphic method are described. By graphically plotting two wrapping step functions facing each other, one for the positive hole-acceptor and one for the negative electron-acceptor, we have the crossing point that renders the Fermi level and majority carrier density. Using the graphic method, new equations are derived, such as the carrier compensation proportional to NA/ND, not the widely quoted NA – ND. Visual insight is offered to view not only the result of graphic determination of Fermi level and majority carrier density, but also the dominant and critical pair of donors and acceptors in compensation. The graphic method presented in the work will help guide the design, adjustment, and improvement of the multiply doped semiconductors. Comparison of this approximate graphic method with previous work on compensation, and with some experimental results is made. Future work in the field is proposed.