Characterization of germanium implanted Si1−xGex layer

Characterization of a Si_1−xGe_x layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise to larger resistance. Optimization of the device structure and fabrication process is discussed.     

Studies on age-hardenable aluminium alloys by atom-probe field-ion microscope

Field-ion microscopy connected with the successive field-evaporation technique and the atom-probe analysis has been applied to studying precipitation processes, especially the early stage of precipitation, in age-hardenable aluminium alloys, such as Al-Cu, Al-Ag and Al-Sc alloys. In Al-Cu alloys, coexistence of the single-layer G.P.(1) zones and the multilayer G.P.(1) zones has been confirmed and the difference between G.P.(1) zones and G.P.(2) zones has been clearly recognized. In Al-Ag alloys, the octahedral shape of η-G.P. zones has been confirmed. In Al-Sc alloys, it has been found that the equilibrium Al₃Sc phase particles precipitate homogeneously from the beginning without any preprecipitation stage and coherency between the precipitate and the matrix is maintained even in an alloy aged at relatively higher temperature for prolonged periods of time.     

A quantitative evaluation of time-independent and time-dependent deformations of lead-free and lead-containing solder alloys

A method to separate plasticity and creep is discussed for a quantitative evaluation of the plastic, transient creep, and steady-state creep deformations of solder alloys. The method of separation employs an elasto-plastic-creep constitutive model comprised of the sum of the plastic, transient creep, and steady-state creep deformations. The plastic deformation is expressed by the Ramberg-Osgood law, the steady-state creep deformation by Garofalo’s creep law, and the transient creep deformation by a model proposed here. A method to estimate the material constants in the elasto-plastic-creep constitutive model is also proposed. The method of separation of the various deformations is applied to the deformation of the lead-free solder alloy Sn/3Ag/0.5Cu and the lead-containing solder alloy Sn/37Pb to compare the differences in the plastic, transient creep, and steady-state creep deformations. The method of separation provides a powerful tool to select the optimum lead-free solder alloys for solder joints of electronic devices.     

A control method for the matrix converter based on virtual AC/DC/AC conversion using carrier comparison method

This paper proposes a novel control method based on the virtual AC/DC/AC conversion for the matrix converter. The virtual AC/DC/AC conversion method is a very simple strategy to control the input current and the output voltage for the matrix converter. There are two new topics proposed in this paper. First, this paper proposes the minimum switching loss modulation on the virtual rectifier. In our proposed modulation, only two arms switching in the virtual rectifier using DC link current control by the virtual inverter can obtain clean sinusoidal input current. Second, a novel lean controlled carrier modulation on the virtual inverter is proposed. The leans of the triangle carrier are controlled by the duty ratio of the rectifier side pulse. The lean controlled carrier reduces harmonic distortion of the input current by avoiding interference between the rectifier control and the inverter control. These new proposals are confirmed by simulation and experimental results. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 152(3): 65–73, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20144     

Synthesis of KTiOPO4 (KTP) Thin Films Using Metallo-organics

Crack-free and highly transparent KTiOPO₄ (KTP) thin films were synthesized by the sol-gel method using a homogeneous precursor solution prepared from ("BuO)₂-P(O)(OH), Ti(OEt)₄, and KOEt in EtOH. Precipitated powders from the solution crystallized directly to KTP above 550°C. Polycrystalline KTP thin films were obtained at 600°C on various substrates. On NdAlO₃(100) substrates, KTP films with (101) and (240) preferred orientations were formed at 600°C. KTP films on glass substrates showed a refractive index of 1.75 and an absorption edge of 350 nm. KTP films exhibited the second harmonic generation of the 532 nm light on irradiaton with 1064 nm light.     

Performance of multiwavelength simultaneous monitoring circuitemploying arrayed-waveguide grating

This paper proposes a novel multiwavelength simultaneous monitoring (MSM) circuit that uses the wavelength crossover properties of an arrayed-waveguide grating (AWG). The MSM circuit consists of an AWG, a stabilized semiconductor laser as a reference light, and logarithmic amplifiers. The AWG chip is a simple planar-lightwave-circuit chip. It functions as multiple optical filters, and make it possible to monitor multiple wavelengths simultaneously. The MSM circuit, locked to the reference wavelength produced by a semiconductor laser stabilized to the 1547.49 mn ¹³C₂ H₂ absorption line, achieved 10 MHz resolution and 30 MHz stability for 24 h in the stable polarization state. Measurement accuracy of better than 1.1 GHz can be realized even if the state of polarization of the input light fluctuates at random. Multiwavelength simultaneous monitoring is successfully demonstrated using tunable lasers     

Diffusion of vanadium,chromium, and manganese in copper

The diffusion coefficients of vanadium, chromium and manaanese in copper have been determined by the residual activity method with radioactive tracers V⁴⁸, Cr⁵¹ and Mn⁵⁴ in the temperature ranges between 955 and 1342 K, between 999 and 1338 K and between 971 and 1253 K, respectively. The temperature dependence of the diffusion coefficients is expressed by the following Arrhenius equations along with the probable errors:D _V/Cu = (2.48 _-0.44 ^+0.53 ) x 10⁻⁴ exp [-(215 ± 2) kJ mol⁻¹/RT] m² per s,D _Cr/Cu = (0.337 _-0.090 ^+0.124 ) x 10⁻⁴ exp [-(195 ± 3) kJ mol⁻¹/RT] m² per s,D _Mn/Cu = (1.02 _-0.18 ^+0.22 ) x 10⁻⁴ exp [-(200 ± 2) kJ mol⁻¹/RT] m² per s. Anomalous penetration profiles for the diffusion of Cr⁵¹ and Mn⁵⁴ in the present results suggest that experimental results onD _Cr/Cu andD _Mn/Cu in the past have been influenced by oxidation and evaporation of the chemically active radiotracers during annealing for diffusion. formerly Graduate Student, Tohoku University     

Liquid-Solid mass transfer in a slurry bubble column and a gas-liquid-solid three-phase fluidized bed

Mass transfer coefficients between particles and liquids in a slurry bubble column and a three-phase fluidized bed containing small size particles were obtained with two mass transfer systems: (1) K⁺ –Na⁺ ion-exchange in cation-exchange resin bead beds, including anion-exchange resin beads as inert particles; (2) zinc dissolution by HCl in zinc-plated glass bead beds, and in beds of non-plated glass beads. Operating parameters were gas velocity, liquid velocity, particle diameter, and particle concentration. The dependence of mass transfer coefficients on these parameters is discussed from the viewpoint of the energy supplied into the systems. Correlations of the experimental data using dimensionless groups are compared to previous correlations.     

Rheo-optical studies on the deformation mechanism of semicrystalline polymers. VIII. Dynamic x-ray diffraction of a high-density polyethylene film having row-structure of C-axis orientation

Dynamic x-ray diffraction is employed to scrutinize the structural origin of the α mechanical dispersion of a highdensity polyethylene having preferentially oriented rownucleated cylindritic texture around the machine direction (MD). Results indicate that the α₁ dispersion is associated with two kinds of orientation processes of crystallites: (1) the orientation process involving the rotation of crystallites around the crystal b-axis (lamellar axis) dominates in the MD specimen; (2) the other process accompanying the rotation of crystallites or lamellar segments around their crystal a-axis dominates in the TD (transverse direction) specimen. The complex apparent crystal lattice compliances show no frequency dependence in the real component and no appreciable value in the imaginary component, indicating that the α₁ process is definitely associated with the intercrystalline process, but not relavent to the intracrystal process. However, at elevated temperatures, the complex lattice compliances exhibit a remarkable frequency dependence, suggesting that the α₂ dispersion concomitant to intracrystalline nature takes place in this time scale. The α₂ dispersion was found to be more pronounced upon stretching along the lamellar axis (TD) than normal to it (MD).