Nanoscale Crystallization in the Amorphous Alloy Fe79P14.2Si4.4Mn2.2V0.2 upon Pulsed Photon Annealing

The effect of pulsed photon annealing with energy densities from 1.4 to 42 J/cm² for various lengths of time on the structure of the amorphous alloy Fe₇₉P_14.2Si_4.4Mn_2.2V_0.2 was studied by x-ray diffraction, differential scanning calorimetry, and transmission electron microscopy. The results demonstrate that short-term irradiation with low energy densities leads to surface relaxation of the amorphous alloy, increases the strength of the surface layer, and reduces the internal-friction peak. Longer term photon annealing leads to crystallization of the alloy throughout the sample thickness.     

Examining pre-adoption interest in online innovations: an exploratory study of e-service personalization in the public sector

In order to better understand why public organizations develop interest in online innovations, this paper develops a revised model of technological innovation with an emphasis on socio-technical factors associated with electronic service delivery. This model focuses on three primary dimensions of online innovation: perceived need, technical capacity, and risk mitigation. It is hypothesized that these three dimensions will have the greatest influence on the development of pre-adoption interest in a new online innovation. This model is then used to examine a single online innovation, personalization of online government information and services. Data from a survey of local governments is used to test the theory. A regression model was estimated from the survey data. Results suggest that perceived need, financial costs, and the ability to mitigate the risks associated with privacy issues each influence the level of interest in personalized online services. The results suggest that public organizations must find reliable means of determining external demand for online innovations, as well as reducing the risks associated with each specific type of online innovation prior to adoption.     

Reliability assessment of polysilicon MEMS structures under mechanical fatigue loading

This paper examines the current status and methodologies of study of material and system reliability in Microelectromechanical Systems (MEMS). This includes: a review of the current literature in the area of MEMS regarding failure analysis experimental investigations; testing methods and philosophies for material characterization and possible mechanistic analytical solutions for estimating material properties. The paper proposes a reliability framework that encompasses all the available information. This statistical platform will enable the MEMS design engineer to distill all the available information in the literature into a stand-alone semi-empirical material reliability model, and a holistic system-level model for a complete system.     

Thermodynamics of Chemical Interactions in the CdTe–ZnTe–O2–C System during Melt Growth of Cd1 – x Zn x Te Crystals

Thermodynamic analysis is used to identify the possible chemical reactions of CdTe and ZnTe with the container material and gaseous atmosphere during Bridgman growth. Thermodynamic parameters of carbide and oxycarbide formation in the growth system are evaluated. The calculation results are consistent with the well-known fact that oxygen-containing impurities can be removed from the growth charge by calcination in hydrogen. Moreover, as shown in experiment, the removal of oxygen from the charge ensures a substantial decrease in the carbon content of the crystals.     

Binary sequences with low aperiodic autocorrelation for synchronization purposes

An evolutionary algorithm is used to find three sets of binary sequences of length 49-100 suitable for the synchronization of digital communication systems. Optimization of the sets are done by taking into consideration the type of preamble used in data frames and the phase-lock mechanism of the communication system. The preamble is assumed to be either a pseudonoise (PN) sequence or a sequence of 1s. There may or may not be phase ambiguity in detection. With this categorization, the first set of binary sequences is optimized with respect to aperiodic autocorrelation which corresponds to the random (PN) preamble without phase ambiguity case. The second and third sets are optimized with respect to a modified aperiodic autocorrelation for different figures of merit corresponding to the predetermined preamble (sequence of 1s) with and without phase ambiguity cases.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Verification structures for transmission line pulse measurements

Test structures intended for performance verification of transmission line pulse (TLP) systems have been designed and tested. They consist of simple resistors in either copper or silicide clad polysilicon. The copper structures proved unsuitable due to excess heating and melting of any reasonable geometry. The silicide clad polysilicon proved more successful. A simple model of resistive heating accounts for observed nonlinearity in the structures under high current stress. The availability of a verification structure on wafer ensures the proper performance of the full measurement system, including contact to the wafer and the pad structure, ensuring valid TLP measurements.