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101.
The characteristics of pulsation processes in dc plasmatrons with the cathode located in the channel center and the anode in the form of a cylindrical or a conical channel wall are investigated in plasmas of argon and nitrogen at atmospheric pressure. The fast Fourier transform of signals and their subsequent computer processing are used to obtain the dependences of the frequency of fluctuations of the arcing voltage on the working parameters of the plasmatron, namely, the electric arc current, the flow rate of plasma-forming gas, and the channel diameter. For plasmatrons with the self-adjusting length of the electric arc, analysis is performed of the mechanism of reclosing of the anode region of the arc, i.e., of the electric arc shunting associated with the stretching of the current filament by a flow of gas and with the electrodynamic interaction of different filament regions. A formula is derived which defines the dependence of the characteristic frequency of fluctuations of the arcing voltage on the external parameters of the problem, namely, the arc current, the flow rate of the working gas, and the characteristic channel diameter. It is demonstrated that the pattern of the dependence of the frequency of voltage fluctuations on the gas flow rate may vary with the values of the parameter of magnetohydrodynamic interaction. The formula generalizes the experimental results of numerous researchers obtained in a wide range of variation of the external parameters. 相似文献
102.
V. N. Petrov V. V. Grebenshikov B. D. Grachev A. S. Kamochkin M. K. Yarmarkin 《Technical Physics Letters》2004,30(2):157-160
A compact electron polarimeter employing the classical Mott scheme has been developed and tested. The device has an efficiency
of about 5.6×10−4, a maximum count rate of 5×105 cps, dimensions 15 cm (diameter) × 25 cm (length), and a working voltage of 40 kV. The polarimeter can operate for a long
time under arbitrary vacuum conditions without maintenance, exhibiting no changes in the main working characteristics, and
obeys all requirements to the electron spin polarization studies on the modern level. 相似文献
103.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
104.
ZhaoYahong ZhangZhongpei WuWeiling 《电子科学学刊(英文版)》2003,20(3):177-182
Adaptive modulation and power allocation is introduced into the multicarrier DSCDMA system to improve the system performance and bandwidth efficiency.First,the system design appropriate for adaptive modulation and power allocation is given,then the algorithm of adaptive modulation and power allocation is applied.Simulation results demonstrate great performance improvement compared with the fixed modulated one. 相似文献
105.
As an aid towards improving the treatment of exchange and correlation effects in electronic structure calculations, it is
desirable to have a clear picture of the errors introduced by currently popular approximate exchange-correlation functionals.
We have performed ab initio density functional theory and density functional perturbation theory calculations to investigate
the thermal properties of bulk Cu, using both the local density approximation (LDA) and the generalized gradient approximation
(GGA). Thermal effects are treated within the quasiharmonic approximation. We find that the LDA and GGA errors for anharmonic
quantities are an order of magnitude smaller than for harmonic quantities; we argue that this might be a general feature.
We also obtain much closer agreement with experiment than earlier, more approximate calculations. 相似文献
106.
Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of
semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons
of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr). 相似文献
107.
Starting from a microscopic Hamiltonian defined on a semi-infinite cubic lattice, and employing a mean-field approximation, the surface parameters relevant for wetting in confined ternary mixtures are derived. These are found in terms of the microscopic coupling constants, and yield a physical interpretation of their origins. In comparison with the standard expression for the surface free-energy density, several new terms arising from the derivation are identified. The influence of the surface parameters on a predicted unbinding transition in a mixture of oil, water, and amphiphile demonstrate that existing results are robust to the addition of the extra surface terms. 相似文献
108.
P. G. Muzykov Y. I. Khlebnikov S. V. Regula Y. Gao T. S. Sudarshan 《Journal of Electronic Materials》2003,32(6):505-510
To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement
techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable
graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique,
and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values
of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable
graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe
method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer
was also obtained and reported in this work. 相似文献
109.
The main objective of this present study was to evaluate, for a standard mortar, the drying effect on its mechanical behaviour. Numerous uniaxial compression tests were thus performed with loading-unloading cycles. They were carried out on different samples previously preserved under various conditions of conservation: preserved from desiccation, air drying and rapid drying at 60°C. The obtained results showed significant influences of these conditions on the material behaviour (increase in strength, decrease in Young's modulus and Poisson's ratio) and the necessity of taking into account the coupling effects between mechanical—poromechanical behaviours and drying. 相似文献
110.
A mechanism of soldering of an aluminum alloy die casting to a steel die is proposed. A soldering critical temperature is
postulated, at which iron begins to react with aluminum to form an aluminum-rich liquid phase and solid intermetallic compounds.
The liquid joins the die with the casting upon solidification. The critical temperature is determined by the elements in both
the casting alloy and the die material and is equal to the solidus temperature of the resulting alloy. The critical temperature
is used to predict the onset of die soldering, and the local liquid fraction is related to the soldering tendency. Experiments
have been carried out to validate the concept and to determine the critical temperature for die soldering in an iron-aluminum
system. Thermodynamic calculations are used to determine the critical temperature and soldering tendency for the cases of
pure aluminum and a 380 alloy in a steel mold. Factors affecting the soldering tendency are discussed, and methods for reducing
die soldering are suggested. 相似文献