1.04 GBd low EMI digital video interface system using small swingserial link technique

In a high-resolution flat panel system, a conventional interface that directly connects a liquid crystal display (LCD) controller to a flat panel cannot overcome the problems of excess EMI (electromagnetic interference) and power caused by full-swing transmission signals in parallel lines. This paper presents a high-speed digital video interface system implemented with a low-cost standard CMOS (complimentary metal-oxide-semiconductor) technology that can mitigate EMI and power problems in high-resolution flat panel display systems. The combined architecture of the high-speed, small number of parallel lines and low-voltage swing serial interface can support resolutions from VGA (640×480 pixels) up to XGA (1024×768 pixels) with significant power improvement and drastic EMI reduction. To support high-speed, low-voltage swing signaling and overcome channel-to-channel skew problems, a robust data recovery system is required. The proposed digital phase-locked loop enables robust skew-insensitive data recovery of up to 1.04 GBd     

Phacoemulsification with a bevel-down phaco tip: phaco-drill

We present a technique for in situ lens nucleus emulsification using low phaco power and high vacuum, a continuous curvilinear capsulorhexis, and hydrodelineation. Emulsification is done with the phaco tip slanted down 30 or 45 degrees. Cutting and aspiration do not cause an undesirable energy loss. This technique can be combined with the nuclear chopping or divide and conquer methods because of its ability to drill and hold the nucleus. Posterior capsular rupture is prevented because the separated epinucleus acts as a barrier between the nucleus and the cortex. The low power used minimizes the energy transfer to the corneal endothelium. This technique is particularly useful in eyes with brunescent cataract.     

Interfacial reactions in the squeeze-cast (SAFFIL+C)/SAE 329 Al composite

Interfacial reactions in the squeeze-cast SAE 329 Al alloy reinforced with SAFFIL and carbon fibers were investigated using scanning and transmission electron microscopy and secondary ion mass spectroscopy. The SiO₂ layer added as a binder for the preform of SAFFIL fiber appeared to prevent excessive reaction between the fiber and the molten Al alloy during casting. In the as-cast composite, the reaction between the SiO₂ layer and the Al alloy is considered to produce MgO crystals in the vicinity of SAFFIL fiber. With subsequent heat treatment of the composite to the T6 condition, small crystals of MgO and MgAl₂O₄ were found to form at the surface of SAFFIL fiber as a result of interfacial reaction between the SiO₂ layer and the Al alloy. Even at the T6 condition, significant reactions between the Al alloy and SAFFIL fiber itself were not observed, indicating the effective role of the binder layer in suppressing the degradation of SAFFIL fiber by reaction with the Al alloy.     

HEURISTIC APPROACHES FOR LOADING PROBLEMS IN FLEXIBLE MANUFACTURING SYSTEMS

Flexible manufacturing systems (FMSs) are able to process a wide variety of operations, but the specific mix of operations that can be performed at any point in time depends upon the combination of tools loaded onto the machines. The machines have tool magazines with finite capacities. We consider the problem of assigning operations and their associated tools to machines (or groups of machines) to maximize the throughput for a specified steady-state mix of orders. Since this objective is difficult to deal with directly, we use an intermediate objective of meeting workload targets for each machine group as closely as possible. A certain form of this intermediate objective has been shown to correlate highly with the original objective.

Since it is computationally intractable to find optimal solutions for problems with more than 20 operations, fast heuristic algorithms are developed. These algorithms are adapted from multi-dimensional bin-packing algorithms. Computational results are reported.     

Spatial retardation of carrier heating in scaled 0.1-μmn-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V_d considerably less than the Si/SiO₂ injection barrier height φ_b. Simulation of both devices reveal that 1) although qV_d<φ_b, carriers can obtain energies greater than φ_b, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates     

A time-domain approach to transmission network equivalents viaProny analysis for electromagnetic transients analysis

This paper presents a method of obtaining transmission network equivalents from the network's response to a pulse excitation signal. The proposed method is based on modal decomposition representation for the large-scale interconnected system. In this framework we use Prony analysis to identify the network function of the system and to decompose the large system into a parallel combination of simple first-order systems. As a result the network function of the transmission network can be identified easily, and a Thevenin-type of discrete-time filter model can be generated. It can reproduce the driving-point impedance characteristic of the network. Furthermore, the proposed model can be implemented into the EMTP in a direct manner. The simulation results with the full system representation and the developed equivalent system showed a good agreement     

Effect of the pressure drop rate on cell nucleation in continuous processing of microcellular polymers

Microllular plastics are cellular polymers characterized by cell densities greater than 10⁹ cells/cm³ and cells smaller than 10 μm. One of the critical steps in the continuous production of microcellular plastics is the promotion of high cell nucleation rates in a flowing polymer matrix. These high nucleation rates can be achieved by first forming a polymer/gas solution followed by rapidly decreasing the solubility of gas in the polymer. Since, in the processing range of interest, the gas solubility in the polymer decreases as the pressure decreases, a rapid pressure drop element, consisting of a nozzle, has been employed as a continuous microcellular nucleation device. In this paper, the effects of the pressure drop rate on the nucleation of cells and the cell density are discussed. The experimental results indicate that both the magnitude and the cell density are discussed. The experimental results indicate that both the magnitude and the rate of pressure drop play a strong role in microcellular processing. The pressure phenomenon affects the thermodynamic instability induced in the polymer/gas solution and the competition between cell nucleation and growth.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.