Flight Model Performance of 640-GHz Superconductor–Insulator–Superconductor Mixers for JEM/SMILES Mission

Performances of 640-GHz Superconductor–Insulator–Superconductor (SIS) mixers developed for the Superconducting Submillimeter-Wave Limb-Emission Sounder (SMILES) mission are described. SMILES, launched in September 2009, is the first mission to observe atmosphere from space using superconducting mixers. Ground test performances of the SIS mixers show very flat gain and noise characteristics in their observation bands in compliance with the specifications required for SMILES.     

A compact thin-film-based all-pass device for the compensation of the in-band dispersion in FBG filters

Fiber Bragg grating (FBG)-based bandpass filters, while possessing close to ideal sharp rolloff characteristics, can suffer from a significant amount of in-band dispersion. Results concerning the compensation of the in-band dispersion of a typical 100-GHz FBG using two thin-film all-pass filters, each composed of two coupled-cavities packaged in a compact configuration, are presented. The total peak insertion loss of the compensation package is less than 2.5 dB.     

Development of a Millimeter-Wave Electron-Spin-Resonance Measurement System for Ultralow Temperatures and Its Application to Measurements of Copper Pyrazine Dinitrate

We have developed a millimeter-wave electron-spin-resonance (ESR) measurement system using a ³He-⁴He dilution refrigerator for the ultralow-temperature range below 1 K. The currently available frequency range is 125–130 GHz. This system is based on a Fabry-Pérot-type resonator (FPR) that is composed of two mirrors. The frequency can be changed by adjusting the distance between the mirrors using a piezoelectric actuator installed at the bottom of the resonator. A homodyne detection system with an InSb detector is built into the low-temperature section of the ³He-⁴He dilution refrigerator; this system provides high sensitivity. Using this system, we performed ESR measurements on a Heisenberg quantum-spin chain—copper pyrazine dinitrate, Cu(C₄H₄N₂)(NO₃)₂—over the temperature range from 6.6 down to 0.25 K. The ESR lines change continuously with decreasing temperature. Our results suggest that the ESR spectrum of copper pyrazine dinitrate may be useful as a temperature sensor for the very low-temperature range.     

SrCaO Protective Layer for High-Efficiency PDPs

The sustain pulse voltage of the panel for 66-kPa Ne + Xe (5%-30%) is 20%-40% lower with a Sr_0.62Ca_0.38O protective layer than with a MgO protective layer. At a normal sustain voltage of 160-200 V, the luminous efficiency of the panel with the Sr_0.62 Ca_0.38O protective layer for Xe (30%) is about twice as high as with the MgO protective layer for Xe (10%). The luminances of these panels are almost the same. This high efficiency at normal sustain pulse voltage and normal luminance is obtained through the combined use of the Sr_0.62Ca_0.38O protective layer and high Xe content. With regard to ion bombardment, the Sr_0.62Ca_0.38O film has a 4.5 times longer life than SrO film and nearly 80% of the life of MgO film. We also calculated the values of theoretical secondary electron emission yield gamma_imin of MgO, SrO, and CaO without energy bands in the band gap for rare gas ions and found that [ gamma_imin of MgO] les [gamma_imin of CaO] < [gamma_imin of SrO] except for the one case with He. The breakdown voltage decreases with higher gamma_imin values. As expected, the discharge voltage of the panel is much lower with the SrO protective layer than with the MgO protective layer. The discharge voltages of the panels with Sr_0.62Ca_0.38O and SrO protective layers are almost the same. These findings show that the life of the SrO protective layer can be made 4.5 times longer without any increase in the discharge voltage by adding CaO (40 at.%)     

Optical heterodyne receiver for selecting densely frequencydivision multiplexed signals

An optical heterodyne receiver that can select any channel out of 2.5 Gbit/s frequency division multiplexed (FDM) signals with spacing as narrow as 5 GHz has been developed. Sharp filtering characteristics of the heterodyne receiver at the intermediate frequency stage enable FDM signals with such narrow channel spacing to be demultiplexed     

Speed limit of all-optical gate switches using cascaded second-order nonlinear effect in quasi-phase-matched LiNbO/sub 3/ devices

In all-optical gate switches that employ the cascaded second-order nonlinear effect in quasi-phase-matched (QPM) LiNbO/sub 3/ devices, walkoff between the fundamental and second harmonic pulses is very large. The authors experimentally show that crosstalk of the switch induced by such walkoff limits the switching speed, but that the switching speed can significantly be enhanced by walkoff compensation. Using a 20-mm-long QPM LiNbO/sub 3/ waveguide device, the authors switch one of twin pulses separated by 6.25 ps without crosstalk, showing the possibility of switching a 160-Gb/s signal.     

Application of focused ion beam techniques and transmission electron microscopy to thin-film transistor failure analysis

The locations of process-induced defects in hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs), which are used as elements of active-matrix liquid crystal displays, were investigated by combining focused ion beam techniques with cross-sectional transmission electron microscopy (X-TEM). The FIB technique is applied to TFT failure analysis problems, which require considerable localised etching without inducing mechanical stress or damage at fragile failure locations. We demonstrate the manner in which these techniques are used to characterise TFT defects such as pinholes and portions of the multilayer damaged by mechanical stress. A dramatic improvement brought about by the FIB technique is the increase in temporal efficiency of sample preparations. X-TEM observations also lead to identification of the fault and analysis of its cause, which in turn lead to a marked yield improvement.     

A 10 Gb/s optical heterodyne detection experiment using a 23 GHzbandwidth balanced receiver

A balanced receiver for multigigabit-per-second coherent optical transmission systems is described. A balanced optical receiver with a frequency bandwidth of 23 GHz is achieved by connecting an InGaAs twin-p-i-n photodiode to a 0.5-30.0 GHz GaAs monolithic distributed amplifier fabricated with a soldier bump flip-chip interconnection technique. An experiment which demonstrated that this receiver has the potential for use in 10-Gb/s optical CPFSK (continuous-phase frequency shift keying) heterodyne detection systems was conducted     

Newly structured expandable 52-Mbit/s, 48-channel time-division switching LSI with 2.4 Gbit/s throughput

An expandable Si bipolar 2.4 Gbit/s throughput, 52 Mbit/s 48-channel time-division switching LSI system is described. A high-throughput of 2.4 Gbit/s and a power-dissipation of 5.3 W are achieved by adopting a low-voltage swing four-serial-gated differential bipolar circuit design and super self-aligned process (SST-1A) logic-in-memory LSI technology. This LSI is applicable to the digital video time-division switching and digital crossconnect systems of future B-ISDN.<>     

Thermoelectric Properties of Multifilled Skutterudites with La as the Main Filler

Bulk multifilled n- and p-type skutterudites with La as the main filler were fabricated using the spark plasma sintering (SPS) method. The thermoelectric properties and thermal stability of these skutterudites were investigated. It was found that the interactions among the filling atoms also play a vital role in reducing the lattice thermal conductivity of the multifilled skutterudites. ZT = 0.76 for p-type La_0.8Ba_0.01Ga_0.1Ti_0.1Fe₃CoSb₁₂ and ZT = 1.0 for n-type La_0.3Ca_0.1Al_0.1Ga_0.1In_0.2Co_3.75Fe_0.25Sb₁₂ skutterudites have been achieved. Furthermore, the differential scanning calorimetry (DSC) results show that there is no skutterudite phase decomposition till 750°C for the La_0.8Ba_0.01Ga_0.1Ti_0.1Fe₃CoSb₁₂ sample. The thermal stability of the La_0.8Ba_0.01Ga_0.1Ti_0.1Fe₃CoSb₁₂ skutterudite is greatly improved. Using the developed multifilled skutterudites, the fabricated module with size of 50 mm × 50 mm × 7.6 mm possesses maximum output power of 32 W under the condition of hot/cold sides = 600°C/50°C.