Giant Piezoresistive Effects in Single Grain Boundaries of Semiconducting Barium Titanate Ceramics*

Extremely large piezoresistive effects with a gage factor (elastoresistance) of > 1 × 10⁶ in single grain boundaries of thin ceramic bars of semiconducting barium titanate have been observed at room temperature. Thin barium titanate ceramic bars with a diameter in the range of 10 to 20 μm were prepared to consist of single grains joined together in series. Large piezoresistive effects were observed for some of the single grain boundaries in the present samples under compressive stresses, but no distinct piezoresistance was observed in the grain bulk. A giant piezoresistive effect with a gage factor of 3 × 10⁷ was observed for a single grain boundary which exhibited a saw-tooth type PTCR (positive temperature coefficient of resistivity) characteristic with a significantly large bias dependence of it. This demonstrates that the piezoresistive phenomenon may be interpreted in terms of the change of the potential barrier height due to the change of ferroelectric domain morphologies in the vicinity of grain boundaries under mechanical and electric stresses.     

Stratum Corneum Lipid Structure Investigated by EPR Spin-Probe Method: Application of Terpenes

Electron paramagnetic resonance (EPR) in conjunction with a slow-tumbling simulation was utilized for defining stratum corneum (SC) lipid structure. SC from the back of hairless mouse (HOS:HR-1) was stripped consecutively from one to three or four times using a glass plate coated with a cyanoacrylate resin. Aliphatic spin probes, 5-doxylstearic acid (5-DSA) and 3β-doxyl-5α-cholestane (CHL), were used to evaluate the SC ordering. EPR spectrum of 5-DSA incorporated in the SC demonstrated a characteristic peak for the first strip. A slow-tumbling simulation for 5-DSA showed clear differences in EPR intensities as well as ordering values (S ₀) of the SC for control and terpenes treated SC. The α-terpineol enhanced the permeation of the single chain 5-DSA about three times more than that of the control. However, EPR spectra of CHL in the SC did not show a clear difference for each strip, except for the signal intensity. The results imply that CHL permeates into SC lipid differently from 5-DSA. The enhancement of the 5-DSA is more significant than that of CHL. Therefore, the present results can be useful for various drug administrations via the skin.     

Parallel phase-shifting digital holography with adaptive function using phase-mode spatial light modulator

Parallel phase-shifting digital holography using a phase-mode spatial light modulator (SLM) is proposed. The phase-mode SLM implements spatial distribution of phase retardation required in the parallel phase-shifting digital holography. This SLM can also compensate dynamically the phase distortion caused by optical elements such as beam splitters, lenses, and air fluctuation. Experimental demonstration using a static object is presented.     

Crystal Growth and Electrical Properties of Pb((Zn1/3Nb2/3)0.91Ti0.09)O3 Single Crystals Produced by Solution Bridgman Method

Piezoelectric Pb((Zn_1/3Nb_2/3)_0.91Ti_0.09)O₃ (PZNT 91/9) single crystals 40 mm in diameter were successfully grown from solution by the Bridgman method with a PbO flux. The crystals were grown in a platinum crucible heated to 1130°C. Growth rate was 0.35 mm/h. The obtained crystals were ~40 mm in diameter 20 mm in length and were a rust-brown color. The Curie temperature, T _C, ranged from 175° to 185°C, and the dielectric constant before poling at room temperature was 2000-8900 within a wafer. After electrical poling, specimens had electromechanical coupling coefficients in rectangular bar mode, k _33´, of 79%-88%, which were larger than for PZT ceramics ( k _33´ < 70%). These PZNT 91/9 single crystals grown by the Bridgman process satisfy the requirements for array-type transducers used in echocardiographic equipment. Results confirm that the Bridgman method is useful for mass-producing large crystals of PZNT 91/9.     

Addition of Aliskiren to Angiotensin Receptor Blocker Improves Ambulatory Blood Pressure Profile and Cardiorenal Function Better than Addition of Benazepril in Chronic Kidney Disease

An altered ambulatory blood pressure (BP) and heart rate (HR) profile is related to chronic kidney disease (CKD) and cardiorenal syndrome. In this study, we examined the effects of aliskiren, when added to angiotensin II type 1 receptor blockers, on ambulatory BP and cardiorenal function in CKD. Thirty-six hypertensive CKD patients were randomly assigned to the aliskiren add-on group (n = 18) or the benazepril add-on group (n = 18). Ambulatory BP and cardiorenal function parameters were measured at baseline and 24 weeks after treatment. Compared with the benazepril group, nighttime systolic BP variability in the aliskiren group was lower after treatment. Albuminuria was decreased in the aliskiren group, but not in the benazepril group. In addition, left ventricular mass index (LVMI) was significantly lower in the aliskiren group than in the benazepril group after treatment. In the aliskiren group, multivariate linear regression analysis showed an association between changes in albuminuria and changes in nighttime systolic BP. Furthermore, there were associations between changes in LVMI and changes in daytime HR variability, as well as between changes in LVMI and changes in plasma aldosterone concentration. These results suggest that aliskiren add-on therapy may be beneficial for suppression of renal deterioration and pathological cardiac remodeling through an improvement that is effected in ambulatory BP and HR profiles.     

Damageless Cu chemical mechanical polishing for porous SiOC/Cu interconnects

Both chemical and mechanical damages to porous SiOC film should be minimized in the Cu-CMP (chemical mechanical polishing) process for the 32-45 nm node Cu interconnect process. This paper first discusses chemical damage that occurs during direct CMP on a porous SiOC film. We found that the k-value increase after direct CMP was caused by the surfactants added to the cleaning chemicals to suppress watermark generation on the hydrophobic SiOC film surface. The surfactants assisted water molecule diffusion into the pores by improving the wettability of the film surface. N₂ annealing after direct CMP removed moisture inside the pores and restored the k-value increase. Second, the paper discusses low-pressure electro-CMP (e-CMP) technology that we developed to reduce mechanical stress on the porous SiOC film. A high removal rate and good planarization performance were obtained by optimizing the cathode area of the electro-cell and carbon material of the e-CMP pad.     

Liquid source chemical vapor deposition of high-dielectric-constant (Ba,Sr)TiO3 films

High-dielectric-constant (Ba, Sr)TiO₃ [BST] films were deposited by the liquid source chemical vapor deposition (CVD) method. The system consisted of a single-wafer, low-pressure thermal CVD reactor, a vaporizer for liquid source materials, and a shower-type gas nozzle head, giving stable BST film deposition on a 6-in. diam. substrate with uniform thickness and uniform chemical composition ratio. The source materials employed were Ba(DPM)₂, Sr(DPM)₂, and TiO(DPM)₂ dissolved in tetrahydrofuran (THF), resulting in conformal step coverage of BST films at lowered substrate temperatures, where DPM denotes dipivaloylmethanate. Moreover, the two-step deposition technique was developed to restart protrusions formed on BST film surfaces at low temperatures, where the BST films consisted of a buffer layer and a main layer; the buffer layer was a layer about 60 Å thick of CVD-BST film annealed in N₂. Thus, the two-step CVD deposition of BST films on Pt and Ru electrodes achieved an equivalent SiO₂ thickness of t_eq ∼ 0.5 nm, a leakage current of J_L ∼ 1.0 × 10⁻⁸ A/cm² (at +1.1 V), and a dielectric loss of tan δ ∼ 0.01 at a total film thickness of 250 Å, along with conformal coverage of 80% for a trench with an aspect ratio of 0.65. Then, for BST films deposited on patterned electrodes 0.24 μm wide, 0.60 μm deep, and 0.15 μm high (each spaced by 0.14 μm), the capacitance was demonstrated to be increased without significant deterioration of the leakage current: the capacitance was increased in comparison with that for films on flat electrodes, by a factor corresponding to the increase in surface area due to sidewalls of storage-node-like pattern features. This capacitance increase reflects the most characteristic advantage of CVD, an excellent step coverage on microscopic pattern features. These electrical properties satisfy the specifications for capacitors for Gb-scale dynamic random access memories (DRAMs), giving a storage capacitance of more than 25 fF/cell for a stacked capacitor having a storage node 0.2 to 0.3 μm high. © 1998 Scripta Technica, Electr Eng Jpn, 125(1): 47–54, 1998