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11.
旋转场移相器具有移相精度高(均方根误差可小于1°)和温度稳定性好等特点,通过改进射频传输结构,可大大提高他的功率容量。利用旋转场移相器的互易特性和铁氧体圆极化器的非互易特性,设计出高功率双工旋转场移相器。其双工特性可将收/发信号分开,实现移相器和环行器的双重功能,用于天线的收发通道等场合时,可省去一个高功率环行器,结构紧凑。分析了双工旋转场移相器的工作原理,阐述了高功率应用下的设计方法,推导出了管状铁氧体的相移量计算公式,按此方法设计了实用的器件,并给出了试验数据。 相似文献
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Christine Di Massimo Paul A. Lant Aidan Saunders Gary A. Montague Ming T. Tham A. Julian Morris 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》1992,53(3):265-277
The last decade has seen the development of a number of approaches for estimating those variables which are difficult to measure on-line in industrial process situations. Whilst a range of techniques is available, a common element is the use of process knowledge in the form of a system model. In the case of bioprocess systems, although a large range of models has been presented in the literature, their use in estimation schemes on an industrial scale has been limited. A number of reasons can be identified for their low level of utilisation. Of particular significance is the uncertainty which exists in quantifying system performance and the process-model mismatch which inevitably results. The level of ‘pre-defined model’ uncertainty, together with the knowledge gained during the course of the fermentation, serves to dictate estimator structure. The paper considers a range of estimation strategies and contrasts, through industrial applications, their performance characteristics and utility. 相似文献
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BaTiO3 multilayer capacitors with a nominal capacitance of 3.5nF have been carefully measured using the thermally stimulated current (TSC) technique. When a 300V polarization voltage is applied at room temperature, a new TSC peak appeared in defective sample A after it has been immersed in water. No new peak was found in good-quality sample B after a similar treatment. The accelerated life test shows that sample A hasa much shorter life than sample B in terms of insulation resistance. 相似文献
14.
The effects of α‐form and β‐form nuclei on polymorphic morphology of poly(butylene adipate) (PBA) upon recrystallization from the molten state up to various Tmax values were examined by differential scanning calorimetry (DSC), wide‐angle X‐ray diffraction (WAXD) and polarized light microscopy (PLM). In this study, PBA with complex melting and polymorphism behaviour was used as a model for examining different types and extents of residual nuclei. As the PBA initially containing the sole α‐crystal was brought to a molten state of various Tmax, the extents of trace α‐form crystal nuclei varied and were dependent on Tmax. Furthermore, it did not matter whether, initially, the PBA contained α‐ or β‐form crystals (or both) because only a single type of α‐nuclei could be left upon treatment to the molten liquid state at Tmax. Therefore, only the α‐crystal in PBA had ‘memory capacity’ in the molten liquid state while the β‐crystal did not. This was so because the latter had been completely transformed into the solid state prior to being heated into a liquid. PBA crystallized before α‐nuclei could be packed into α‐crystal, regardless of the crystallization temperature (Tc). For recrystallization from molten PBA without any nuclei, the crystalline polymorphism was correspondingly influenced by Tc. Copyright © 2005 Society of Chemical Industry 相似文献
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地方热电联产企业发展对策的探讨 总被引:2,自引:2,他引:0
介绍了泰州热电企业的运行情况,分析了各热电厂在技术改造、扩大热用户和强化内部考核管理方面的措施,探讨了地方热电企业应采取的对策和发展思路。 相似文献
17.
Kow Ming Chang Yuan Hung Chung Gin Ming Lin 《Electron Device Letters, IEEE》2002,23(5):255-257
Studies the anomalous variations of the OFF-state leakage current (IOFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous IOFF can be attributed to (1) IOFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) IOFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/LCH) 相似文献
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