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91.
92.
Polyaryloxydiphenylsilanes were prepared from phosphorus‐containing diols and diphenydichlorolsilane through solution polymerization. With a stoichiometric imbalance in feed monomers, the resulting polymers exhibited moderate melting points and good processing properties. The polymers prepared showed initial decomposition temperatures above 340 °C, excellent thermal stability, high char yields at 850 °C and very high limited oxygen index values of 56–59. The polymers' char yields and their (P + Si) contents showed linear relationships. © 2003 Society of Chemical Industry 相似文献
93.
94.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
95.
Bong Keun Kim Wan Kyun Chung 《Industrial Electronics, IEEE Transactions on》2003,50(6):1207-1216
Disturbance-observer (DOB)-based controller design is one of the most popular methods in the field of motion control. In this paper, the generalized disturbance compensation framework, named the robust internal-loop compensator (RIC) is introduced and an advanced design method of a DOB is proposed based on the RIC. The mixed sensitivity optimization problem, which is the main issue of DOB design, is also solved through the parametrization of the DOB in the RIC framework. Differently from conventional methods, the Q-filter is separated from the mixed sensitivity optimization problem and a systematic design law for the DOB is proposed. This guarantees the robustness and optimality of the DOB and enables the design for unstable plants. 相似文献
96.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
97.
三江盆地西部藻类地层学特征 总被引:3,自引:1,他引:2
本文依据三江盆地西部4口井的藻类分布特征,自下而上划分9个组合,并对各组合的时代及沉积环境进行了探讨。 相似文献
98.
共焦显微术和多光子显微术因其可以对厚的生物样品实现光学断层成像,因而在生物医学等领域具有广泛的应用前景,本文详细综述了共焦显微术和多光子显微术在成像原理及特性等方面的差别,在此基础上,讨论了每种显微术各自的优点、局限性及应用前景。 相似文献
99.
100.
The objective is to have uniformly distributed tangential stresses on the transition profile of a stepped bar subjected to tensile and torsional loading using an axisymmetric boundary element formulation. The transition curve is represented by the Langragian interpolation polynomial with progressive degrees to avoid shape distortion during the optimization procedure. The calculated result is compared with that obtained by fluid dynamics given in the literature. It is seen that the transition curve obtained in this paper is reasonable. 相似文献