添加物对Fe_2O_3超微粒的稳定作用

粒子的尺寸直接关系着气敏元件性能的好坏．为了防止Ｆｅ２Ｏ３超微粒在气敏元件烧结过程中长大，我们在纯Ｆｅ２Ｏ３中掺入５ｍｏｌ％碱土金属离子，利用ＸＲＤ和ＴＥＭ系统研究了掺杂物对Ｆｅ２Ｏ３超微粒子的稳定作用，并对由掺杂引起的Ｆｅ２Ｏ３电学性质的变化作了初步探讨．     

Analysis of the drude model in metallic films

A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi(2) and TaSi(2), films have been studied.     

Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures

A pseudomorphic Al0.5Ga0.5As/In0.25Ga0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.     

Effect of carrier screening on ZnO-based resistive switching memory devices

The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10⁵ at an annealing temperature of 600 °C, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.

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介质薄膜的透射光谱测量及其光学参数的分析

介绍介质薄膜透射光谱的测量以及基于分析薄膜透射光谱的计算薄膜光学参数的方法。对制备在玻璃基板上的二氧化钛、二氧化硅和氧化锌薄膜进行了可见光谱区的透射比测量，并用包络线方法和最优化方法对这些透明薄膜的光学参数进行了计算和分析。着重讨论了最优化方法在分析薄膜光学参数中的应用及其误差分析。此外，还对包络线方法和最优化方法进行了比较。     

钙钛矿结构材料的制备方法研究

介绍了巨磁电阻效应的发展现状,主要研究了有关钙钛矿结构L1-yCyMnO3（L=a3＋,Pr3＋,Nd3＋等稀土离子;C=Ca2＋,Sr2＋,Ba2＋等二价碱土金属离子）体系的制备方法及其特点,并对各种方法制备的样品特性进行了比较。对材料研究目的的不同,需要不同特性的样品,本研究可以对制备方法的选择提供一个参考。     

Creation and control of high-dimensional multi-partite classically entangled light

Vector beams, non-separable in spatial mode and polarisation, have emerged as enabling tools in many diverse applications, from communication to imaging. This a...