A Gunn-Diode Active Leaky-Wave Frequency Scanning Antenna

A frequency tunable active leaky-wave scanning antenna using Gunn-diode voltage control oscillator (VCO) as source is developed. The frequency tuning controlled by changing either the varactor diode dc bias or the Gunn diode dc bias is demonstrated. The measured scanning angle of active antenna is close to 15 degree as the Gunn VCO frequency tuned from 12.58GHz to 12.98GHz. To excite the first higher order mode of the microstrip leaky-wave antenna is fed asymmetrically. The dominant mode excitation has been successfully suppressed by adding a sequence of covered wire in the middle line of the microstrip leaky wave antenna. This is a prototype of frequency scanning antenna using two terminal device, which can be easily scaled up to millimeter wave frequency region.     

A 2.4-GHz CMOS transceiver for Bluetooth

A fully integrated CMOS transceiver tuned to 2.4 GHz consumes 46 mA in receive mode and 47 mA in transmit mode from a 2.7-V supply. It includes all the receive and transmit building blocks, such as frequency synthesizer, voltage-controlled oscillator (VCO), power amplifier, and demodulator. The receiver uses a low-IF architecture for higher level of integration and lower power consumption. It achieves a sensitivity of -82 dBm at 0.1% BER, and a third-order input intercept point (IIP3) of -7 dBm. The direct-conversion transmitter delivers a GFSK modulated spectrum at a nominal output power of 4 dBm. The on-chip voltage controlled oscillator has a close-in phase-noise of -120 dBc/Hz at 3-MHz offset     

Ambient‐Stable,Annealing‐Free,and Ambipolar Organic Field‐Effect Transistors Based on Solution‐Processable Poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene) without Long Alkyl Side Chains

An ambipolar conjugated polymer CF₃‐PBTV, poly(2,2′‐bis(trifluoromethyl)biphenyl‐alt‐2,5‐divinylthiophene), consisting of thienylenevinylene as the donor and trifluoromethyl‐substituted biphenyl as the acceptor has been successfully synthesized. CF₃‐PBTV shows solution‐processability without electrically insulating long alkyl side chains. Grazing incidence X‐ray diffraction results suggest a nearly equal population of flat‐on and end‐on domains in CF₃‐PBTV thin film. The excellent ambipolarity of CF₃‐PBTV is demonstrated by well‐equivalent charge mobilities of 0.065 and 0.078 cm² V^?1 s^?1 for p‐ and n‐channel, respectively. The organic field‐effect transistors (OFET) also shows very high on/off ratio (≈10⁷) which is attributed to the relatively large bandgap and low‐lying highest occupied molecular orbital (HOMO) of CF₃‐PBTV. The OFET performance barely changes after the device is stored in ambient conditions for 90 days. The ambient‐stability is attributed to the enhanced oxidative stability from its low‐lying HOMO and the better moisture resistance from its fluorine contents. The performance of CF₃‐PBTV based OFET is annealing independent. It is noteworthy that the solution‐processable, ambipolar, and thienylenevinylene‐containing conjugated polymer without any long alkyl side chains is reported for the first time. And to the best of our knowledge, it is the first ambient‐stable, annealing‐free OFET with well‐equivalent ambipolarity.     

Searching General Sufficient‐and‐Necessary Conditions for Ultrafast Hydrogen‐Evolving Electrocatalysis

The development of cost‐effective and high‐performance electrocatalysts for the hydrogen evolution reaction (HER) is one critical step toward successful transition into a sustainable green energy era. Different from previous design strategies based on single parameter, here the necessary and sufficient conditions are proposed to develop bulk non‐noble metal oxides which are generally considered inactive toward HER in alkaline solutions: i) multiple active sites for different reaction intermediates and ii) a short reaction path created by ordered distribution and appropriate numbers of these active sites. Computational studies predict that a synergistic interplay between the ordered oxygen vacancies (at pyramidal high‐spin Co³⁺ sites) and the O 2p ligand holes (OLH; at metallic octahedral intermediate‐spin Co⁴⁺ sites) in RBaCo₂O_5.5+δ (δ = 1/4; R = lanthanides) can produce a near‐ideal HER reaction path to adsorb H₂O and release H₂, respectively. Experimentally, the as‐synthesized (Gd_0.5La_0.5)BaCo₂O_5.75 outperforms the state‐of‐the‐art Pt/C catalyst in many aspects. The proof‐of‐concept results reveal that the simultaneous possession of ordered oxygen vacancies and an appropriate number of OLH can realize a near‐optimal synergistic catalytic effect, which is pivotal for rational design of oxygen‐containing materials.     

Ultrathin Highly Luminescent Two‐Monolayer Colloidal CdSe Nanoplatelets

Surface effects in atomically flat colloidal CdSe nanoplatelets (NLPs) are significantly and increasingly important with their thickness being reduced to subnanometer level, generating strong surface related deep trap photoluminescence emission alongside the bandedge emission. Herein, colloidal synthesis of highly luminescent two‐monolayer (2ML) CdSe NPLs and a systematic investigation of carrier dynamics in these NPLs exhibiting broad photoluminescence emission covering the visible region with quantum yields reaching 90% in solution and 85% in a polymer matrix is shown. The astonishingly efficient Stokes‐shifted broadband photoluminescence (PL) emission with a lifetime of ≈100 ns and the extremely short PL lifetime of around 0.16 ns at the bandedge signify the participation of radiative midgap surface centers in the recombination process associated with the underpassivated Se sites. Also, a proof‐of‐concept hybrid LED employing 2ML CdSe NPLs is developed as color converters, which exhibits luminous efficacy reaching 300 lm W_opt^?1. The intrinsic absorption of the 2ML CdSe NPLs (≈2.15 × 10⁶ cm^?1) reported in this study is significantly larger than that of CdSe quantum dots (≈2.8 × 10⁵ cm^?1) at their first exciton signifying the presence of giant oscillator strength and hence making them favorable candidates for next‐generation light‐emitting and light‐harvesting applications.     

Bandwidth enhancement of transimpedance amplifier by acapacitive-peaking design

Using a capacitive-peaking (C-peaking) technique to increase the bandwidth of a transimpedance amplifier has been proposed. An analytical model for determining the peaking capacitance in the Butterworth-type transimpedance amplifier design has been derived. Based on this approach, we can design a larger bandwidth of a transimpedance amplifier. The low-frequency transimpedance gain in our fabricated amplifier is 0,95 kΩ, and the 3 dB bandwidth of the transimpedance amplifier is enhanced from 1.1 to 2.3 GHz without sacrificing its low-frequency gain by this C-peaking technique     

Wireless broadband communications: some research activities inSingapore

Almost a decade ago, Singapore started crafting and implementing its IT2000 master plan to transform the city-state into an information-technology-based intelligent island. Since 1997, the main infrastructure of a high-speed ATM-based backbone network, called SingaporeONE, has been in place along with a host of commercial and governmental application service sites providing a plethora of online services. Because of its small size and extensive wired infrastructure, broadband access to homes and offices is currently provided via ADSL and cable modems. There is, however, interest in the use of wireless broadband communication technologies to access SingaporeONE, motivated primarily by its lower cost and faster deployment. In this article we describe some of our R&D activities motivated by the above interest to provide wireless broadband access to SingaporeONE. Specifically, we describe our study of LMDS, and the design and development of a wireless ATM LAN     

Conception of Stretchable Resistive Memory Devices Based on Nanostructure‐Controlled Carbohydrate‐block‐Polyisoprene Block Copolymers

It is discovered that the memory‐type behaviors of novel carbohydrate‐block ‐polyisoprene (MH‐b ‐PI) block copolymers‐based devices, including write‐once‐read‐many‐times, Flash, and dynamic‐random‐access‐memory, can be easily controlled by the self‐assembly nanostructures (vertical cylinder, horizontal cylinder, and order‐packed sphere), in which the MH and PI blocks, respectively, provide the charge‐trapping and stretchable function. With increasing the flexible PI block length, the stretchability of the designed copolymers can be significantly improved up to 100% without forming cracks. Thus, intrinsically stretchable resistive memory devices (polydimethylsiloxane(PDMS)/carbon nanotubes(CNTs)/MH‐b ‐PI thin film/Al) using the MH‐b ‐PI thin film as an active layer is successfully fabricated and that using the MH‐b ‐PI_12.6k under 100% strain exhibits an excellent ON/OFF current ratio of over 10⁶ (reading at ?1 V) with stable V _set around ?2 V. Furthermore, the endurance characteristics can be maintained over 500 cycles upon 40% strain. This work establishes and represents a novel avenue for the design of green carbohydrate‐derived and stretchable memory materials.     

非挥发性记忆体Read Disturb测试方法的研究

DDF是一种高容量的NAND Flash。以DDF产品为例,研究和讨论了它的Read Disturb测试方法。受测试时间的限制,只能选择局部的存储区间进行DDF的Read Disturb测试。这样局部区间的测试结果是否能够代表整个芯片的性能,设计了一套实验,对这个课题进行了研究和讨论。依据非挥发性记忆体产品的特性,主要以阈值电压的分布为参考来评价DDF芯片性能的一致性和性能恶化趋势的一致度。最后的实验结果证明了这种测试方法的正确性和合理性。这种分析方法也可以用于其他非挥发性记忆体产品的其他可靠性测试项目的评估。     

Utilization of self-injection Fabry–Perot laser diode for long-reach WDM-PON

In this investigation we propose and demonstrate a wavelength widely tunable laser source employing a self-injected Fabry–Perot laser diode (FP-LD) for long-reach wavelength-division-multiplexed passive optical network (WDM-PON). By using a tunable bandpass filter and an optical circulator inside the gain cavity, a stable and single-longitudinal-mode (SLM) laser output is achieved. Besides, the proposed laser sources are directly modulated at 2.5 Gb/s for both downlink and uplink transmissions of 85 km single mode fiber (SMF) in PON without dispersion compensation.