Skeletal Isomerization and Inter—molecular Hydrogen Transfer Reactions in Catalytic Cracking

Bimolecular hydrogen transfer and skeletal isomerization the important secondary reac-tions among catalytic cracking reactions,which affect product yield distribution and product quality,Catalyst properties and operating parameters have great impact on bimolecular hydrogen transfer and skeletal isomerization reactions .Bimolecular hydrogen transfer activity and skeletal isomrization activity of USY-containing catalysts are higher thn that of ZSM-5-containing catalyst.Coke deposition on the active sites of catalyst may suppress bimolecular hydrogen transfer activity and skeletal isomer-ization activity of catlys in different degrees.Short raction time causes a decrease of hydrogen trans-fer reaction,but and increase of skeletal isomerization reaction compared to cracking reaction in catalytic cracking process.     

局部设有钢筋砼电梯井墙的设计探讨

本文就局部设有钢筋砼电梯井的工程计算及理论分析，阐明分析了少墙的框剪结构的设计及注意问题。     

铁路冷藏运输运价分析

本文对各种运输方式易腐货物的运价进行了比较分析,对铁路冷藏运输的现行运价和保本运价进行了讨论,提出了铁路冷藏运输运价改革的若干建议,可供铁路进行冷藏运输改革参考。     

宽带无源光网络(BPON)关键技术的发展与研究

宽带无源光网络（BPON）是实现宽带、多业务接入的理想物理平台，本文介绍了BPON网络的发展，重点讨论了将ATM技术和PON技术相结合的APON系统及其升级系统SuperPON的基本结构和关键技术，对最近兴起的将以太技术和PON技术相结合的EPON系统的基本概念和工作原理也进行了阐述，并对未来BPON技术的发展进行了展望。     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

全有机配方在我公司的应用

介绍了成都齐达科技开发公司的全有机配方在该公司循环冷却水系统的应用     

几种重要的有机氯系阻燃剂

介绍了氯化石蜡、氯化聚乙烯、四氯邻苯二甲酸酐、四氯双酚A、六氯环戊二烯 及由六氯环戊二烯衍生的几种氯系阻燃剂的生产过程和用途。     

结合试飞特点,开展专用测试设备计量确认

根据我院专用测试设备计量确认现状及需求，对开展试飞专用测试设备计量确认工作的要求，步骤、确认原则，以及编定计量确认方法进行了必要的讨论分析。     

Development of the Chinese Scientometric Indicators (CSI)

We describe the Chinese Scientometric Indicators (CSI), an indicator database derived from the Chinese Science Citation Database (CSCD). Its design is supported by the Natural Sciences Foundation of China (NSFC). In this indicator database data of a statistical nature are organized and categorized leading to ranked lists and providing bases for comparisons among Chinese institutions and regions.