表面活性剂在纳米粉体制备中的应用

本文论述了表面活性剂在Al2O3纳米粉体制备、改性等方面的应用,并简要介绍表面活性剂在纳米粉体修饰中的作用。     

A 2.6-V, 44-MHz all-digital QPSK direct-sequence spread-spectrumtransceiver IC [wireless LANs]

In this paper, an all-digital differentially encoded quaternary phase shift keying (DEQPSK) direct sequence spread-spectrum (DSSS) transceiver is proposed. The transceiver consists of two parts: a baseband/IF spread-spectrum transmitter and a coherent intermediate frequency (IF) receiver. The center frequency of this IF receiver is 11 MHz and the sampling rate is 44 Msamples/s. Modulation/demodulation, carrier recovery, PN acquisition, and differential coding are all provided within a single chip. Functional optimization and architecture design were performed before layout implementation. The 0.8-μm N-well CMOS chip has a complexity of 56000 transistors with a core area of 3.5×3.5 mm². Power dissipation is 92 and 145 mW at 2.6 and 3.3 V, respectively     

Long-term base current instability in AlGaAs/GaAs HBTs: physical mechanisms, modeling, and SPICE simulation

This paper provides an overview of the long-term base current instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT), which is a main mechanism governing the HBT long-term current gain drift and thus a major concern for the HBT reliability. Topics covered include: (1) types of base current instability and their underlying physical mechanisms; (2) leakage currents in the HBT and their relevance to the reliability; (3) electrothermal interaction and their impact on the HBT reliability; (4) analytic model for predicting the HBTs mean time to failure (MTTF); and (5) SPICE implementation and simulation of HBT circuit reliability. Measurements and device simulation results are also included in support of the modeling and analysis.     

Recognition and pose estimation of unoccluded three-dimensionalobjects from a two-dimensional perspective view by banks of neuralnetworks

This paper describes a neural network (NN) based system for recognition and pose estimation of an unoccluded three-dimensional (3-D) object from any single two-dimensional (2-D) perspective view. The approach is invariant to translation, orientation, and scale. First, the binary silhouette of the object is obtained and normalized for translation and scale. Then, the object is represented by a set of rotation invariant features derived from the complex orthogonal pseudo-Zernike moments of the image. The recognition scheme combines the decisions of a bank of multilayer perceptron NN classifiers operating in parallel on the same data. These classifiers have different topologies and internal parameters, but are trained on the same set of exemplar perspective views of the objects. Next, two pose parameters, elevation and aspect angles, are obtained by a novel two-stage NN system consisting of a quadrant classifier followed by NN angle estimators. Performance is tested on clean and noisy data bases of military ground vehicles. Comparative studies with three other classifiers (a single NN, the weighted nearest-neighbor classifier, and a binary decision tree) are carried out.     

A study of the validity of capacitance-based method for extractingthe effective channel length of MOSFET's

The capacitance-based method (C-V method) is a straightforward method for extracting the effective channel length of MOSFETs. This paper investigates the validity of such a method based on results simulated from a two-dimensional (2-D) device simulator. The effective channel length extracted from the C-V method is also compared with those obtained from other methods reported in the literature     

Estimation of fatigue damage and fatigue life of components under random loading

To examine the applicability of methods proposed in the estimation of fatigue damage and fatigue life of components under random loading, a batch of specimens made of 7075-T651 aluminium alloy has been studied and some of the results are reported in the present paper. The paper describes different methods and rules in the calculation of fatigue damage, especially when random loading is considered. The methods and rules are then verified by the results of a series of low-cycle fatigue tests. It is concluded that a ‘plastic work interaction damage rule’ proposed by Morrow gives us better fatigue damage prediction than the widely used Palmgren-Miner rule, and a formula derived in random vibration books can be used to predict the fatigue damage very easily. It is also found that fatigue lives of the tested specimens can be fitted appropriately by normal or log-normal probability density function. The fatigue reliability of a component made of the same material can therefore be estimated based on the above information.     

Effects of right ventricular pacing on ventriculoatrial conduction and systemic venous responses in sick sinus patients

This study was designed to assess the ventriculoatrial (VA) conduction and systemic venous responses to right ventricular pacing at different pacing rates and the feasibility of identifying patients prone to pacemaker syndrome by means of a Doppler and two-dimensional echocardiographic technique. Twenty-two sick sinus patients who received ventricular-demand permanent pacemakers constituted the study group. The proximal inferior vena cava (IVC) diameters were measured by two-dimensional echocardiography. Fourteen patients had VA conduction by preimplant electrophysiologic study or paced electrocardiogram (Group II), while the other 8 patients presented no VA conduction (Group I). Abnormal systolic retrograde flow in the hepatic vein following each paced beat could be demonstrated in those patients with VA conduction in the basal state. In the 8 patients without VA conduction, the IVC diameters were significantly increased during rapid right ventricular pacing in those with left ventricular dysfunction (n = 4) as compared with those with normal left ventricular function (n = 4) (% increment at 120 beats per minute.     

Analysis of non-uniform current and temperature distributions in the emitter finger of AlGaAs/GaAs heterojunction bipolar transistors

This paper develops a comprehensive and two-dimensional model for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The model takes into account the electrical-thermal interacting mechanism in both the width and length directions of the HBT emitter finger and thus is capable of describing the two-dimensional temperature and current distributions in the emitter finger of the HBT. Results produced from a three-dimensional device simulator are also included in support of the model.     

Grain Refining and Decoupling in FePt/SiO2 Nanogranular Films for Magnetic Recording

FePt/SiO₂ nanogranular thin films have been prepared by molecular-beam epitaxy system on MgO (001) substrates with the method of insertion dual SiO₂ layers into Fe/Pt multilayer films. We report the relationships between the inserting thickness of SiO₂ layers and the microstructural and magnetic properties of FePt thin films. It indicated the nanogranular FePt thin films were successfully formed by inserting amorphous SiO₂ layers into the Fe/Pt films. The reduction of grain/domain size and isolation of FePt particles can be achieved by such insertion and maintain (001) texture. The average grain size of FePt films with 5-nm SiO₂ insert layers is estimated to be around 8 nm, while domain rotation is enhanced depicting a decoupling of intergrain interaction. The isolated grains are less magnetically coupled in the rotation mode and the reversal of magnetization is more independent