A low-phase-noise K-band CMOS VCO

A novel circuit topology for low-phase-noise voltage controlled oscillators (VCOs) is presented in this letter. By employing a PMOS cross-coupled pair with a capacitive feedback, superior circuit performance can be achieved especially at higher frequencies. Based on the proposed architecture, a prototype VCO implemented in a 0.18-/spl mu/m CMOS process is demonstrated for K-band applications. From the measurement results, the VCO exhibits a 510-MHz frequency tuning range at 20GHz. The output power and the phase noise at 1-MHz offset are -3dBm and -111dBc/Hz, respectively. The fabricated circuit consumes a dc power of 32mW from a 1.8-V supply voltage.     

机载激光武器回顾与发展

鉴于美国对弹道导弹"多层防御"体系建设的日益重视,从发展历程、发展现状和未来规划三部分,详细介绍了作为弹道导弹"多层防御"体系重要组成部分的机载激光武器的研制进展情况,以期为读者提供机载激光武器过去、现在、将涞三方面全方位的发展信息,同时还分析了机载激光武器在研制过程中所遇到的包括技术实现和经费等在内的一些困难,希望对我国该领域的发展起到一定的参考作用.     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

基于模式理论光栅椭偏参数反演的数值模拟

将一种广泛用于求解系统优化问题的方法——正单纯形法，求解光栅的椭偏方程。首先，利用求解光栅的傅立叶模式理论对TE和TM波的复反射系数进行求解。然后计算出其相应的椭偏参数(△，Ψ)，并在该值的基础上加入不同偏差的随机高斯噪声，将加入噪声后的值(△m，Ψm)作为模拟测量值。最后使用优化算法进行反演。通过对几种常用面形光栅椭偏参数的数值模拟，一方面表明傅立叶模式理论计算光栅的椭偏参数不仅精度高。而且速度快；另一方面表明利用正单纯形法得到的光栅参数值很接近于正演时假设的参数值，从而从理论上证明了利用椭偏法测量光栅各种光学参数的可行性。     

Whispering-gallery-like modes in square resonators

The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers.     

外源乙烯对黄瓜幼苗根系生长及内源多胺含量的影响

精确控制营养液溶氧浓度和外源乙烯浓度,研究了黄瓜幼苗根系在低氧水培时的生长情况以及PAs含量的变化。结果表明,外源乙烯对根际低氧逆境下黄瓜幼苗根系的生长有抑制作用,虽然根径增粗,含水量增加,但根系的总根数、总表面积、总体积、干重和鲜重都有所减少,随着乙烯浓度的增加,抑制作用增强;外源乙烯对根际低氧逆境下黄瓜幼苗根系PAs含量有着明显的拮抗作用,外源乙烯使根际低氧逆境下黄瓜幼苗根系的伤害症状加重。     

不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

向家坝水电站右岸隧道进出口边坡的处理研究

文章主要从实践方面介绍了向家坝水电站右岸地方还建公路北线段隧道洞口施工期边坡缺陷处理措施,并总结了几点经验,这对于以后公路隧道洞口的设计和施工,尤其是洞口边坡塌方的处理具有一定指导意义。     

数值试井在白6-2井测试资料分析评价中的应用

数值试井是在近来发展的一项新的试井解释技术，具有处理非均质，复杂边界油气藏问题的优点，弥补了常规解析试井技术的不足。运用数值试井解释技术，结合动、静态资料，通过对白6-1断块白6-2井测试资料的综合分析评价，确定了储层渗流参数，落实了该气藏的边界情况，为该断块下一步开发提供可靠依据。