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141.
Kyoung Hwan Yeo Chang Woo Oh Sung Min Kim Min Sang Kim Chang Sub Lee Sung Young Lee Sang Yeon Han Eun Jung Yoon Hye Jin Cho Doo Youl Lee Byung Moon Yoon Hwa Sung Rhee Byung Chan Lee Jeong Dong Choe Ilsub Chung Donggun Park Kinam Kim 《Electron Device Letters, IEEE》2004,25(6):387-389
Highly manufacturable partially insulated field-effect transistors (PiFETs) were fabricated by using Si-SiGe epitaxial growth and selective SiGe etch process. Owing to these technologies, pseudo-silicon-on-insulator (SOI) structures, partially insulating oxide (PiOX) under source/drain (PUSD) and PiOX under channel (PUC), could be easily realized with excellent structural and process advantages. We are demonstrating their preliminary characteristics and properties. Especially, in the PUSD PiFET, junction capacitance, leakage current, and DIBL in bulk devices could be reduced and the floating body problem in SOI devices was also cleared without any area penalty. Thus, this PiFET structure can be a promising candidate for the future DRAM cell transistor. 相似文献
142.
Jianjun Yu Lei Xu Yong-Kee Yeo Ji P.N. Ting Wang Gee-Kung Chang 《Photonics Technology Letters, IEEE》2006,18(14):1524-1526
We experimentally demonstrate a novel and simple method to generate a dark return-to-zero (RZ) pulse with tunable pulsewidth and extinction ratio by using a dual-arm LiNbO /sub 3/ intensity modulator. Our experimental results show that this dark RZ pulse signal can be used in a 10-Gb/s optical packet switching system as an optical label. In addition, we demonstrate that this dark RZ label can be easily erased using the gain saturation effect in a semiconductor optical amplifier. 相似文献
143.
Lin C.Y. Ma M.W. Chin A. Yeo Y.C. Chunxiang Zhu Li M.F. Dim-Lee Kwong 《Electron Device Letters, IEEE》2003,24(5):348-350
We have fabricated the fully silicided NiSi on La/sub 2/O/sub 3/ for n- and p-MOSFETs. For 900/spl deg/C fully silicided CoSi/sub 2/ on La/sub 2/O/sub 3/ gate dielectric with 1.5 nm EOT, the gate dielectric has large leakage current by possible excess Co diffusion at high silicidation temperature. In sharp contrast, very low gate leakage current density of 2/spl times/10/sup -4/ A/cm/sup 2/ at 1 V is measured for 400/spl deg/C formed fully silicided NiSi and comparable with Al gate. The extracted work function of NiSi was 4.42 eV, and the corresponding threshold voltages are 0.12 and -0.70 V for respective n- and p-MOSFETs. Electron and hole mobilities of 156 and 44 cm/sup 2//V-s are obtained for respective n- and p-MOSFETs, which are comparable with the HfO/sub 2/ MOSFETs without using H/sub 2/ annealing. 相似文献
144.
In this letter, we developed an improved ultrafast measurement method for threshold voltage V/sub th/ measurement of MOSFETs. We demonstrate I/sub d/--V/sub g/ curve measurement within 1 /spl mu/s to extract the threshold voltage of MOSFET. Errors arising from MOSFET parasitics and measurement setup are analyzed quantitatatively. The ultrafast V/sub th/ measurement is highly needed in the investigation of gate dielectric charge trapping effect when traps with short detrapping time constants are present. Application in charge trapping measurement on HfO/sub 2/ gate dielectric is demonstrated. 相似文献
145.
We present the previously unreported CT appearance of a Wilms' tumor which extended down the ureter and protruded into the bladder as a botryoid mass. The tumor apparently arose from an intralobar nephrogenic rest and demonstrated local invasion into renal sinus vessels and papillae. There was no tumor invasion into the wall of the ureter or bladder, and therefore, the extension into the ureter and bladder did not upstage the tumor. This report adds to the list of differential diagnoses of a botryoid bladder mass in a child and demonstrates yet another unusual manifestation of Wilms' tumor. 相似文献
146.
Kang J.F. Yu H.Y. Ren C. Wang X.P. Li M.-F. Chan D.S.H. Yeo Y.-C. Sa N. Yang H. Liu X.Y. Han R.Q. Kwong D.-L. 《Electron Device Letters, IEEE》2005,26(4):237-239
By using a high-temperature gate-first process, HfN--HfO/sub 2/-gated nMOSFET with 0.95-nm equivalent oxide thickness (EOT) was fabricated. The excellent device characteristics such as the sub-1-nm EOT, high electron effective mobility (peak value /spl sim/232 cm/sup 2//V/spl middot/s) and robust electrical stability under a positive constant voltage stress were achieved. These improved device performances achieved in the sub-1-nm HfN--HfO/sub 2/-gated nMOSFETs could be attributed to the low interfacial and bulk traps charge density of HfO/sub 2/ layer due to the 950/spl deg/C high-temperature source/drain activation annealing process after deposition of the HfN--HfO/sub 2/ gate stack. 相似文献
147.
New BiCMOS logic circuits employing a charge trapping technique are presented. The circuits include an XOR gate and an adder. Submicrometer technologies are used in the simulation and the circuits' performances are comparatively evaluated with the CMOS and that of the recently reported circuits. The proposed circuits were fabricated using a standard 0.8-μm BiCMOS process. The experimental results obtained from the fabricated chip have verified the functionality of the proposed logic gates 相似文献
148.
149.
Ren C. Yu H.Y. Wang X.P. Ma H.H.H. Chan D.S.H. Li M.-F. Yee-Chia Yeo Tung C.H. Balasubramanian N. Huan A.C.H. Pan J.S. Kwong D.-L. 《Electron Device Letters, IEEE》2005,26(2):75-77
In this letter, we study Terbium (Tb)-incorporated TaN (TaTb/sub x/N) as a thermally robust N-type metal gate electrode for the first time. The work function of the Ta/sub 0.94/Tb/sub 0.06/N/sub y/ metal gate is determined to be /spl sim/4.23 eV after rapid thermal anneal at 1000/spl deg/C for 30 s, and can be further tuned by varying the Tb concentration. Moreover, the TaTb/sub x/N-SiO/sub 2/ gate stack exhibits excellent thermal stability up to 1000/spl deg/C with no degradation to the equivalent oxide thickness, gate leakage, and time-dependent dielectric breakdown (TDDB) characteristics. These results suggest that Tb-incorporated TaN (TaTb/sub x/N) could be a promising metal gate candidate for n-MOSFET in a dual-metal gate Si CMOS process. 相似文献
150.
CsLiB6O10 (CLBO) thin films are grown on Si (100) and (111) substrates using lower index SiO2 and CaF2 as buffer layers by pulsed KrF (248 nm) excimer laser ablation of stoichiometric CLBO targets over a temperature range of
425 to 725°C. A CaF2 buffer layer is grown on Si by laser ablation while SiO2 is prepared by standard thermal oxidation. From extended x-ray analysis, it is determined that CaF2 is growth with preferred orientation on Si (100) at temperatures lower than 525°C while on Si (111) substrate, CaF2 is grown epitaxially over the temperature range; this agrees well with observed reflection high energy electron diffraction
patterns. X-ray 2θ-scans indicate that crystalline CLBO are grown on SiO2/Si and CaF2/Si (100). Analysis of reflectance spectra from CLBO/SiO2/Si yields the absorption edge at 182 nm. Surface roughness of the CaF2 and CLBO/CaF2/Si film are 19 and 15 nm, respectively. This relatively rough surface caused by the ablation of wide bandgap CaF2 and CLBO limits the application of CLBO for waveguiding measurement. 相似文献