Three ways to implement interfacial techniques: application tomeasurements of chromatic dispersion, birefringence, and nonlinearsusceptibilities

Depending on the spectal width of the source illuminating an interferometer, measurement procedures can utilize either the whole interferogram, or only the fringe envelope, or only the fringe quick oscillations. With an ultraband spectrum source, a simplified adaptation of the methods of Fourier transform spectroscopy yields the variations of the test-fiber propagation constant over the whole wavelength-interval of the source. Chromatic dispersion can then be computed from a single interferogram. With narrower spectrum sources, only the fringe envelopes are utilized and yield measurements of mode delay, with application to chromatic and polarization mode dispersion. In this case, however, interferograms at several wavelengths are necessary. With even narrower spectrum sources, the fringe quick oscillations provide measurements of phase shifts, related to changes in the mode propagation constant, when outside perturbations are applied to the test fiber. A direct method for measuring the third-order nonlinear susceptibilities is discussed. In this case the outside perturbation is an intense pump laser field     

General formalism for the study of nonlinear pulse propagation in optical fibres

A general formalism for the study of nonlinear pulse propagation in optical fibres is presented. It is then applied to study the time evolution of a Gaussian laser pulse in a fibre with cubic and fifth-order nonlinearity in the index of refraction. The results are presented and discussed.     

Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors

We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Gao.47Ino.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1?m-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyfT of 19 GHz.     

Analytic approach to the computation of the temperature distribution in multilayer structures under heating by cw scanning laser radiation

By using integral transform methods, an approach is developed to the solution of a problem on the temprature distribution in multilayer structures heated by cw scanning laser radiation, with phase transitions in the layers taken into account.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 53, No. 6, pp. 1000–1010, December, 1987.     

Business climate attitudes and company relocation decisions.

A total of 438 manufacturing firms reported their business relocation activity, their overall attitude toward the business climate in Michigan, and their assessment of 34 business climate dimensions. Using a lens model paradigm, we explored reasons for a lack of relation between actual relocation decisions and overall business climate attitudes. Location decisions were most highly correlated with distance and labor considerations, whereas overall business climate was most highly correlated with tax considerations, and secondarily correlated with labor problems. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Quantum and Classical Correlations of Spatial and Spin Degrees of Freedom in Quantum Rings

A one-dimensional mesoscopic ring with one input and two output leads acts as a spintronic beam splitter. The spatial degree of freedom, i.e., the presence of two different possible output channels, gets intertwined with the spin direction as a consequence of quantum interference and spin-orbit interaction. We investigate this kind of spatial-spin correlation, and show that the output density operator contains no quantum entanglement in the important special case when the device polarizes a perfectly random input spin state. However, the correlations are in general not purely classical, we also present specific input states with maximal spatial-spin entanglement after the ring.     

Intercomparison of scanning probe microscopes

Comparison measurements on reference standards are reported in which 13 partners with different instruments took part. A set of prototype standards which had been produced and calibrated within a European project were used for the measurements. Here, results of measurements on a 240 nm step height standard and a two-dimensional lateral standard with a nominal pitch of 1 μm are reported.