Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.     

Modified Transition Matrix Simulations of Communication Systems

We apply appropriately enhanced transition matrix and multicanonical methods to communication systems. Our procedure not only predicts time-independent quantities such as the bit-error-probability but can also be applied to dynamic effects such as the distribution of fading times.     

Enhancing Chaotic Communication Performances by Manchester Coding

A numerical analysis of an optical chaotic transmission system, based on the synchronization of two chaotic lasers, in a master-slave closed loop configuration is presented. At the transmitter, the master chaotic wave is superposed on the information message; at the receiver, the message is recovered by subtracting the synchronized slave chaotic wave from the received signal. The performances are analyzed in terms of the Q-factor, considering two different message modulation formats: the nonreturn-to-zero and the Manchester coding. The Manchester coding shows enhanced performances due to the shift of the signal spectrum to higher frequencies.     

Potential applications of LF-noise spectroscopy to the development of new-generation gas sensors

The solution proposed relates to flicker-noise gas sensors under development, which differ from conventional chemical sensors in offering exceptional selectivity for the analysis of a gaseous environment. The classification and analytical justification are given of low-frequency-noise spectroscopy techniques and measures that are proposed for investigation of disordered semiconductors. The feasibility is shown of patterning processes for flicker-noise gas sensors. Some methods are proposed for these processes and for measurement procedures of gaseous-environment monitoring.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Effect of hot pressing on processing and properties of BBN ceramics

BBN (BaBi₂Nb₂O₉) is very interesting and promising lead free material with relaxor properties in capacitors, sensors and actuators.     

Novel electro-optic properties of epitaxially grown (Pb, La)(Zr, Ti)O3 (PLZT) thin films derived by advanced sol–gel methods

Advanced sol–gel methods using a secondary solvent addition into (Pb, La)(Zr, Ti)O₃ (PLZT) sol–gel solution and a methanol pre-treatment of sapphire substrates are demonstrated. For the secondary solvent addition, the additive affected the crystallinity and electro-optic (EO) property of PLZT films and only methanol addition can improve them. In addition, the methanol pre-treatment is also appeared to be effective to improve film characteristics.

Through these optimizations, epitaxially grown PLZT thin films on r-cut sapphire are obtained and a high Pockels coefficient which is comparable to those of bulk PLZTs is achieved. It is believed that these PLZT thin films are applicable for integrated EO devices and open the door for the future data communication systems.     

A time series bootstrap procedure for interpolation intervals

A sieve bootstrap procedure for constructing interpolation intervals for a general class of linear processes is proposed. This sieve bootstrap provides consistent estimators of the conditional distribution of the missing values, given the observed data. A Monte Carlo experiment is used to show the finite sample properties of the sieve bootstrap and finally, the performance of the proposed method is illustrated with a real data example.     

Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel

The effect of nonlinearity of the drift velocity of free charge carriers and the gradient-and concentration-related nonlinearities in the power-voltage sensitivity of a field-effect transistor with a short channel are studied theoretically. Theoretical results are compared with experimental data on the detection of terahertz radiation. It follows from the comparison that, in order to gain deeper insight into observed systematic features in the analysis of high-frequency characteristics of the transistor, one has to take into account some other mechanisms of the current nonlinearity, in addition to the plasma-related nonlinearity.