应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

Scanning tunneling spectroscopic study of monolayer 1T-TaS2 and 1T-TaSe2

Nano Research - The isostructural and isoelectronic transition-metal-dichalcogenides 1T-TaS2 and 1T-TaSe2 are layered materials with intricate electronic structures. Combining the molecular beam...     

一种家用手持式红外偏振光治疗仪的设计与实现

红外偏振光治疗仪是一种将红外技术与电子技术应用到医学领域的康复理疗设备,主要用于软组织损伤和慢性疼痛的康复治疗,已在医院得到了推广使用。然而,现有医院使用的台式治疗仪由于体积大、售价高等特点,不方便居家使用。为了开发体积小、售价低、家庭可用的红外偏振光治疗仪,满足家用市场的潜在需求,本文提出了一种新的便携手持式红外偏振光治疗仪,并开发了该智能控制系统。本文首先介绍了一种新的家用手持式治疗仪应具备的特点和关键技术指标,在此基础上设计了手持式治疗仪的硬件总体方案和软件架构,简要介绍了该治疗仪的一些关键技术,最终实现了治疗仪样机的研制。为了验证该样机的性能,本文通过大量的测试,结果表明,研制的手持式红外偏振光治疗仪在关键参数指标上达到了医院同类产品的水平,能够很好地满足家用的需求,具有良好的市场前景。     

基于DSP的智能电源控制单元设计与实现

本文利用TI公司TMS320F28335芯片高效的浮点运算能力,结合片上丰富的外设,设计并实现了一种具有高可靠性的智能电源控制单元。该控制单元周期性地对各片上外设进行自检维护,完成多路负载通道控制、电压、电流的实时监控,并对故障进行指示、处理和上报,同时提供人机交互界面更新状态信息。经过验证,该控制单元工作稳定,具备良好的工程应用价值。     

Heterogeneity in industry–university R&D collaboration and firm innovative performance

Scientometrics - University–industry R&;amp;D collaboration is a key driver of participating firms’ technological capability. However, there is still debate on the determinants of a...     

Fabrication of Cu/graphite film/Cu sandwich composites with ultrahigh thermal conductivity for thermal management applications

Effective thermal management of electronic integrated devices with high powder density has become a serious issue, which requires materials with high thermal conductivity (TC). In order to solve the problem of weak bonding between graphite and Cu, a novel Cu/graphite film/Cu sandwich composite (Cu/GF/Cu composite) with ultrahigh TC was fabricated by electro-deposition. The micro-riveting structure was introduced to enhance the bonding strength between graphite film and deposited Cu layers by preparing a rectangular array of micro-holes on the graphite film before electro-deposition. TC and mechanical properties of the composites with different graphite volume fractions and current densities were investigated. The results showed that the TC enhancement generated by the micro-riveting structure for Cu/GF/Cu composites at low graphite content was more effective than that at high graphite content, and the strong texture orientation of deposited Cu resulted in high TC. Under the optimizing preparing condition, the highest in-plane TC reached 824.3 W·m⁻¹·K⁻¹, while the ultimate tensile strength of this composite was about four times higher than that of the graphite film.     

CO2对煤炭氧化自燃抑制作用的影响研究

通过煤炭自然氧化程序升温实验,采用程序升温实验系统等设备,对比分析煤样中通入不同浓度CO2条件下的相关参数的变化情况,针对性分析研究CO2对阳煤二矿易自燃高瓦斯的15号煤层氧化自燃的抑制性能。研究表明:CO2对阳煤二矿15号煤层煤样自然氧化发火过程具有显著抑制作用,尤其是20%浓度的CO2对煤样高温氧化阶段的抑制作用强烈;CO2的注入驱离了煤样中的O2,降低了煤样中O2浓度。同时,延迟推后了CO、CH4等自然氧化产物出现,且其浓度低于未注入CO2的煤样,降低了煤样的耗氧速率和CO产生率,抑制和延迟了煤样自然氧化的发生和发展过程。     

Removal of imidacloprid and acetamiprid from tea infusions by microfiltration membrane

Removal of imidacloprid and acetamiprid in tea infusions by microfiltration membrane using dead‐end model was investigated in the present study. The results showed that microfiltration significantly promoted the removal of both pesticides (P < 0.05) in tea infusions. Furthermore, the extent of removal was strongly influenced by the pore size of membrane, operational pressure and the concentrations of tea infusions. The initial concentration of imidacloprid and acetamiprid showed no significant effect on their removal rates. The maximum removal rates were 79.7% for imidacloprid and 81.9% acetamiprid. The changes in major chemical components of tea infusions after microfiltration were evaluated. The results indicated that microfiltration caused no considerable changes in total polyphenols and total free amino acids, and small but statistically significant losses (6.3–18.0%) of eight catechins and three methylxanthines when filtration volume reached to 200 mL. The present study validated the application of microfiltration as a potentially feasible and promising method for the removal of imidacloprid and acetamiprid residues from tea infusions.     

DCS分布式冷却系统在通信基站的应用研究

针对基站柜式空调耗电量大的问题,创造性地使用基站分布式冷却的方式,达到精确送风,节能高效的目的.在应用实践中检验了分布式冷却系统实际节能量和应用效果,总结出分布式冷却系统应用场景和范围,为更大范围推广应用DCS分布式冷却系统提供实践依据.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.