基于连续压导探针的炸药爆速和临界直径测试方法?

临界直径是确定炸药合理装药直径、预防炸药拒爆和不完全爆轰的重要指标,对炸药性能提高和高效利用有着十分重要的意义。设计了一种连续压导探针和楔形装药装置,在对炸药爆速进行测试的同时,利用炸药在临界直径不完全爆轰的特征,通过寻找爆轰波传播的拐点确定炸药临界直径。试验结果表明:装药密度为0.9g/cm3的铵油炸药爆速为3 261 m/s,临界直径为12.5 mm。提供了一种可同时测得炸药爆速和临界直径的方法,该方法简单,试验费用低,对炸药参数测试具有一定的指导意义。     

坑道内爆炸冲击波相似律问题探讨

为研究坑道内爆炸冲击波相似律问题,进行了不同药量坑道堵口爆炸实验,并利用ANSYS/LSDYNA软件对原型坑道与模型坑道爆炸冲击波进行数值计算。结果表明:与自由大气中不同,同一坑道内不同药量爆炸产生的冲击波不符合爆炸相似律;若原型坑道与模型坑道几何相似,装药量之比为几何相似比的三次方,则原型坑道与模型坑道内爆炸冲击波符合爆炸相似律;坑道内爆炸冲击波数值模拟时,若原型坑道与模型坑道网格尺寸符合相应的几何相似比,则冲击波计算结果满足相似律,当坑道截面网格密度为1675~2977时可以达到计算精度要求。     

碳纳米管在环氧树脂乙醇溶液中的分散性研究

采取硝酸-盐酸回流法对碳纳米管进行纯化,以超声振荡为手段,探究了在乙醇溶液中表面活性剂种类、浓度、复配方法及超声振荡时间等因素对碳纳米管在环氧树脂基体中的分散性能的影响。通过碳纳米管环氧树脂悬浮液的稳定保存时间来观察其分散性能。结果表明,阴离子型表面活性剂十二烷基苯磺酸钠(SDBS)分散效果最好。     

互联网与智能化时代的产品设计思维和方法研究

目的探寻与构建互联网与智能化时代的产品设计思维与方法。方法以新设计语境条件下产品自身概念的重新定义为切入点,通过论述互联网与泛载智能时代产品开发设计所需的设计、大数据、社群、场景、四大思维及其融合关系,来探讨区别于传统语境下产品开发设计的新流程与方法。结论在产品软硬件高度融合,泛载智能成为主流的情况下,以社群构建为核心的用户全流程参与式设计,以场景思维置入的方式来评估产品的商业应用潜能,以快速测试、反馈迭代来减少试错周期与成本,逐渐成为互联网与智能化时代下新产品开发设计的核心。     

Atomic disorders in layer structured topological insulator SnBi<Subscript>2</Subscript>Te<Subscript>4</Subscript> nanoplates

Identification of atomic disorders and their subsequent control has proven to be a key issue in predicting, understanding, and enhancing the properties of newly emerging topological insulator materials. Here, we demonstrate direct evidence of the cation antisites in single-crystal SnBi₂Te₄ nanoplates grown by chemical vapor deposition, through a combination of sub-ångström-resolution imaging, quantitative image simulations, and density functional theory calculations. The results of these combined techniques revealed a recognizable amount of cation antisites between Bi and Sn, and energetic calculations revealed that such cation antisites have a low formation energy. The impact of the cation antisites was also investigated by electronic structure calculations together with transport measurement. The topological surface properties of the nanoplates were further probed by angle-dependent magnetotransport, and from the results, we observed a two-dimensional weak antilocalization effect associated with surface carriers. Our approach provides a pathway to identify the antisite defects in ternary chalcogenides and the application potential of SnBi2Te4 nanostructures in next-generation electronic and spintronic devices.

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Controllable defects implantation in MoS<Subscript>2</Subscript> grown by chemical vapor deposition for photoluminescence enhancement

Photoluminescence (PL) of transition metal dichalcogenides (TMDs) can be engineered by controlling the density of defects, which provide active sites for electron-hole recombination, either radiatively or non-radiatively. However, the implantation of defects by external stimulation, such as uniaxial tension and irradiation, tends to introduce local damages or structural non-homogeneity, which greatly degrades their luminescence properties and impede their applicability in constructing optoelectronic devices. In this paper, we present a strategy to introduce a controllable level of defects into the MoS₂ monolayers by adding a hydrogen flow during the chemical vapor deposition, without sacrificing their luminescence characteristics. The density of the defect is controlled directly by the concentration of hydrogen. For an appropriate hydrogen flux, the monolayer MoS₂ sheets have three times stronger PL emission at the excitonic transitions, compared with those samples with nearly perfect crystalline structure. The defect-bounded exciton transitions at lower energies arising in the defective samples and are maximized when the total PL is the strongest. However, the B exciton, exhibits a monotonic decline as the defect density increases. The Raman spectra of the defective MoS₂ reveal a redshift (blueshift) of the in-plane (out-of-plane) vibration modes as the hydrogen flux increases. All the evidence indicates that the generated defects are in the form of sulfur vacancies. This study renders the high-throughput synthesis of defective MoS₂ possible for catalysis or light emitting applications.

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一种基于降维密度聚类的船舶异常轨迹识别方法

目的 有效分析和探索海洋船舶时空轨迹行为模式,提高船舶轨迹聚类的效率与质量,更好地检测真实船舶的异常行为。方法 针对当前船舶轨迹数据研究中存在的对多维特征信息利用不足、检测效率不高、检测精度较差等问题,提出一种精确度高、能自主识别分析多维特征的船舶异常轨迹识别方法。首先利用随机森林分类器评估多维特征重要性,构建轨迹特征的最优组合;然后提出一种降维密度聚类方法,将T–分布随机邻域嵌入(T–SNE)和自适应密度聚类(DBSCAN)模型结合,通过构建特征选择层和无监督聚类层实现对数据元素非线性关系的高效提取以及对聚类参数的智能选择;最后根据聚类结果构建类簇特征向量,计算距离阈值判别轨迹相似度,实现轨迹异常检测模型的构建。结果 以UCI数据集为例,降维密度聚类方法对4、13、30、64维特征数据集的F1分数能达到0.9 048、0.9 534、0.8 218、0.6 627,多个聚类指标均优于DBSCAN、K–Means等常见聚类算法的。结论 研究结果表明,降维密度聚类方法能有效提取数据多维特征结构,实现聚类参数自适应,弥补密度聚类中参数难以确定的问题,有效实现对多种类型船舶轨迹异常的识别。     

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low-temperature low-cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light-sensitive organic semiconductor and charge-trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m⁻²), along with a responsivity as high as 1.6 A W⁻¹ (wavelength = 465 nm) for a dark current of 0.24 A m⁻² (drain voltage = −1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high-resolution 3D organic semiconductor devices.     

Sensor selection for parameterized random field estimation in wireless sensor networks

We consider the random field estimation problem with parametric trend in wireless sensor networks where the field can be described by unknown parameters to be estimated. Due to the limited resources, the network selects only a subset of the sensors to perform the estimation task with a desired performance under the D-optimal criterion. We propose a greedy sampling scheme to select the sensor nodes according to the information gain of the sensors. A distributed algorithm is also developed by consensus-based ...     

C2C电子商务企业竞争力研究

伴随着互联网的发展,电子商务逐渐进入我们的经济生活中。作为网络经济的产物,电子商务企业与传统企业在竞争优势上存在巨大差异。面对着日益激烈的竞争,电子商务企业如何保持核心竞争力优势对企业的生存尤为重要。本文聚焦于C2C领域,并以淘宝网为例,尝试从企业核心竞争力的角度诠释电子商务企业与传统企业竞争优势的差异和竞争力培养的着力点。