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81.
The humidity response characteristics of La doped BaTiO3 with different sintered densities and room temperature electrical conductivities were investigated using complex impedance measurement. The samples with low density and high resistivity showed the large and nearly linear sensitivity to the change of humidity. The impedance spectra of samples, when exposed to high humidity, can exhibit microstructure-related features, even though they do not give rise to a noticeable characteristic change when exposed to low humidity. The observed impedance patterns were dependent upon the density, and hence the oxidation kinetics of BaTiO3.  相似文献   
82.
In this paper, the dynamical characteristics of hybrid bi-directional associative memory (BAM) neural networks with constant transmission delays are investigated. Without assuming the symmetry of synaptic connection weights and the monotonicity and differentiability of activation functions, the Lyapunov functionals are constructed and Halanay-type inequalities are respectively employed to derive the delay-independent sufficient conditions under which the networks converge exponentially to the equilibria associated with temporally uniform external inputs. Some examples are given to illustrate that the results are less conservative and less restrictive than the previously known results.  相似文献   
83.
开发PROFIBUS-DP智能从站   总被引:9,自引:0,他引:9  
简单介绍了PROFIBUS-DP现场总线,同时讨论了利用89C52单片机和PROFIBUS-DP从站芯片SPC3开发PROFIBUS-DP智能从站的软硬件设计方法。  相似文献   
84.
Memory cost is responsible for a large amount of the chip and/or board area of customized video and image processing system realizations. In this paper, we present a novel technique-founded on data-flow analysis which allows one to address the problem of background memory size evaluation for a given nonprocedural algorithm specification, operating on multidimensional signals with affine indexes. Most of the target applications are characterized by a huge number of signals, so a new polyhedral data-flow model operating on groups of scalar signals is proposed. These groups are obtained by a novel analytical partitioning technique, allowing to select a desired granularity, depending on the application complexity. The method incorporates a way to tradeoff memory size with computational and controller complexity  相似文献   
85.
A microprocessor clock generator based on an analog phase-locked loop (PLL) is described for deskewing the internal logic control lock to an external system lock. This PLL is fully generated onto a 1.2-million-transistor microprocessor in 0.8-μm CMOS technology without the need for external components. It operates with a lock range from 5 to 110 MHz. The clock skew is less than 0.1 ns, with a peak-to-peak jitter of less than 0.3 ns for a 50-MHz system clock frequency  相似文献   
86.
刍议小型水电站项目收购风险管理   总被引:1,自引:0,他引:1  
李曼 《小水电》2007,(3):9-11
相对于其他项目的收购风险评估,小型水电站(电站总装机容量5万kW以下)收购有其特殊性。在总结和归纳小型水电站特点的基础上,结合一般项目收购风险评估方法,分析项目收购各个阶段存在的风险和对策。为有收购水电项目意向的企业和个人提供决策依据。图1幅。  相似文献   
87.
江汉盆地西南缘白垩系渔洋组砂岩储集层非均质性比较严重,储集物性除受沉积微相控制外还与成岩作用密切相关。各种常见的成岩作用类型在研究区均有出现,其中压实作用、压溶作用、胶结作用与交代作用对储集层孔渗性起破坏性作用;而溶解作用形成大量粒间、粒内溶孔和铸模孔,对改善储集层性质起到了较好的建设性作用。研究认为,引起区内储集层孔隙度和渗透率下降的关键成岩作用是硬石膏的胶结与交代作用,形成硬石膏的硫酸盐来自新沟咀组烃源岩中的膏盐段,其中的硫酸盐随油气的运移一起进入储集层,硬石膏的出现范围预示着油气的到达位置,因此它对研究区的油气分布有着明显的控制作用。图7参9  相似文献   
88.
Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low Vd-stress and in high Vd-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low Vd-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress  相似文献   
89.
In this work, a model predictive control method combined with fuzzy identification, is applied to the design of the thermoelectric (TE) power control in the SP-100 space reactor. The future TE power is predicted by using the fuzzy model identified by a subtractive clustering method of a fast and robust algorithm. The objectives of the proposed fuzzy model predictive controller are to minimize both the difference between the predicted TE power and the desired power, and the variation of control drum angle that adjusts the control reactivity. Also, the objectives are subject to maximum and minimum control drum angle and maximum drum angle variation speed. The genetic algorithm that is effective in accomplishing multiple objectives is used to optimize the fuzzy model predictive controller. A lumped parameter simulation model of the SP-100 nuclear space reactor is used to verify the proposed controller. The results of numerical simulations to check the performance of the proposed controller show that the TE generator power level controlled by the proposed controller could track the target power level effectively, satisfying all control constraints.  相似文献   
90.
An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/.  相似文献   
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