Dynamic Power Integrity Control of ATE for Eliminating Overkills and Underkills in Device Testing

This paper proposes a power integrity control technique for dynamically controlling power supply voltage fluctuations for a device under test (DUT), and demonstrates its effectiveness for eliminating the overkills/underkills due to the difference of power supply impedance between an automatic test equipment (ATE) and a practical operating environment of the DUT. The proposed method injects compensation currents into the power supply nodes on the ATE system in a feed-forward manner such that the ATE power supply waveform matches with the one on the customer’s operating environment of the DUT. A method for calculating the compensation current is also described. Experimental results show that the proposed method can emulate the power supply voltage waveform under a customer’s operating condition and eliminate 95 % of overkills/underkills in the maximum operating frequency testing with 105 real silicon devices. Limitations and applications of the proposed method are also discussed.     

A quantitative evaluation of time-independent and time-dependent deformations of lead-free and lead-containing solder alloys

A method to separate plasticity and creep is discussed for a quantitative evaluation of the plastic, transient creep, and steady-state creep deformations of solder alloys. The method of separation employs an elasto-plastic-creep constitutive model comprised of the sum of the plastic, transient creep, and steady-state creep deformations. The plastic deformation is expressed by the Ramberg-Osgood law, the steady-state creep deformation by Garofalo’s creep law, and the transient creep deformation by a model proposed here. A method to estimate the material constants in the elasto-plastic-creep constitutive model is also proposed. The method of separation of the various deformations is applied to the deformation of the lead-free solder alloy Sn/3Ag/0.5Cu and the lead-containing solder alloy Sn/37Pb to compare the differences in the plastic, transient creep, and steady-state creep deformations. The method of separation provides a powerful tool to select the optimum lead-free solder alloys for solder joints of electronic devices.     

Electrical and Thermal Conductivity and Conduction Mechanism of Ge<Subscript>2</Subscript>Sb<Subscript>2</Subscript>Te<Subscript>5</Subscript> Alloy

Ge₂Sb₂Te₅ alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge₂Sb₂Te₅ alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge₂Sb₂Te₅ alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann–Franz law using the resistivity results. At room temperature, Ge₂Sb₂Te₅ alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge₂Sb₂Te₅ alloy accounts for the thermal conduction mechanism.     

Characterization of plasma membrane H+-ATPase from salt-tolerant yeast Candida versatilis

Plasma membrane was isolated from the salt-tolerant yeast Candida versatilis and the ATPase in plasma membrane was characterized. The ATPase was a typical H⁺-ATPase with similar properties to the Saccharomyces cerevisiae and Zygosaccharomyces rouxii enzymes. It was reacted with antibody (IgG) raised against S. cerevisiae plasma membrane H⁺-ATPase. The ATPase activity was not changed by adding NaCl and KCl to the assay solutions, but was increased by NH, especially by ammonium sulfate. In vivo stimulation of ATPase activity was observed by the addition of NaCl into the culture medium, as observed in Z. rouxii. No in vivo activation of H⁺-ATPase by glucose metabolism was observed in C. versatilis cells and the activity was independent of the growth phase, like Z. rouxii and unlike S. cerevisiae cells.     

Crystallographic, Thermoelectric, and Mechanical Properties of Polycrystalline Ba8Al x Si46−x Clathrates

The Al content dependence of crystallographic, thermoelectric, and mechanical properties is reported for polycrystalline Ba₈Al _x Si_46?x (nominal x = 15 to 17) clathrates prepared by combining arc melting and spark plasma sintering methods. The elastic constants and the coefficient of thermal expansion (CTE), which are also important properties for designing thermoelectric devices, are presented. Powder x-ray diffraction, scanning electron microscopy, and energy-dispersive x-ray spectroscopy (EDX) indicate that the type I clathrate is the major phase of the samples but impurity phases (mainly BaAl₂Si₂, Si, and Al) are included in the samples with high Al contents. The actual Al content x determined by EDX ranges from approximately 14 to 15. The absolute value of the Seebeck coefficient increases and the electrical conductivity decreases as the Al content increases. The changes in Seebeck coefficient and electrical conductivity are explained in terms of the dependence of the carrier concentration on the Al content. The elastic constants and the CTE of the samples depend weakly on the Al content. Some of the properties are compared with reported data of single crystals of Ba₈Al₁₆Ge₃₀, Ba₈Ga₁₆Ge₃₀, Sr₈Ga₁₆Ge₃₀, silicon, and germanium as standard references. The effective mass, Hall carrier mobility, and lattice thermal conductivity, which govern the transport properties, are determined to be ~ 2.4m ₀, ~ 7 cm² V^?1 s^?1, and ~ 1.3 W m^?1 K^?1, respectively, for actual Al content x of about 14.77. The thermoelectric figure of merit ZT is estimated to be about 0.35 at 900 K for actual Al content x of about 14.77.     

Impact of Dynamic Interlayer Interactions on Thermal Conductivity of Ca3Co4O9

The phonon thermal conductivity of misfit-layered Ca₃Co₄O₉ has been calculated by perturbed molecular dynamics using a classical force field. Detailed numerical analyses reveal that, in spite of its smaller cross-sectional area, the CoO₂ layer transports more heat than the thicker rock salt (RS) layer, although its local thermal conduction is more suppressed than in another layered cobaltite, Na _x CoO₂. The origins of these differences have been elucidated through careful examination of the atomic arrangements in each layer. Since thermal conduction in the RS layer can be reduced without deteriorating electronic properties for which the CoO₂ layer is responsible, it is suggested that the RS layer should be modified to further suppress the overall in-plane thermal conductivity. Computational experiments with increasing number of Ca–O planes in the RS layer showed the opposite trend to what can be predicted based on the misfit between two dissimilar layers. Further analyses to reveal the origin of these unexpected results provide yet another strategy to further decrease the thermal conductivity, namely to control the dynamic interference between atoms across the interface between two layers.     

Compiling for Reduced Bit-Width Queue Processors

Embedded systems are characterized by the requirement of demanding small memory footprint code. A popular architectural modification to improve code density in RISC embedded processors is to use a reduced bit-width instruction set. This approach reduces the length of the instructions to improve code size. However, having less addressable registers by the reduced instructions, these architectures suffer a slight performance degradation as more reduced instructions are required to execute a given task. On the other hand, 0-operand computers such as stack and queue machines implicitly access their source and destination operands making instructions naturally short. Queue machines offer a highly parallel computation model, unlike the stack model. This paper proposes a novel alternative for reducing code size by using a queue-based reduced instruction set while retaining the high parallelism characteristics in programs. We introduce an efficient code generation algorithm to generate programs for our reduced instruction set. Our algorithm successfully constrains the code to the reduced instruction set with the addition of only 4% extra code, in average. We show that our proposed technique is able to generate about 16% more compact code than MIPS16, 26% over ARM/Thumb, and 50% over MIPS32 code. Furthermore, we show that our compiler is able to extract about the same parallelism than fully optimized RISC code.     

Topical Phenomena Observed in a Short-Gap Atmospheric Discharge Using Rotor and Post Electrodes

Correlation of light emission, discharge structure, waveform of the discharge current, electrode configuration, and electromagnetic radiation is examined with the intent of obtaining an effective means for preventing electromagnetic interference (EMI) due to a short-gap discharge. The electromagnetic radiation (EMR) level resulting from a current step which, in turn, was formed by a discrete movement of a cathode spot was clearly recognized. A combination of needle rotor and needle post gave the smallest electromagnetic radiation level in the experiments.     

Strength Analysis of Yttria-Stabilized Tetragonal Zirconia Polycrystals

Tensile strength of Y₂O₃-stabilized ZrO₂ polycrystals (Y-TZP) was measured by a newly developed tensile testing method with a rectangular bar. The tensile strength of Y-TZP was lower than that of the three-point bend strength, and the shape of the tensile strength distribution was quite different from that of the three-point bend strength distribution. It was difficult to predict the distribution curve of the tensile strength using the data of the three-point bend strength by one-modal Weibull distribution. The distribution of the tensile strength was analyzed by two- or three-model Weibull distribution coupled with an analysis of fracture origins. The distribution curve of the three-point bend strength which was estimated by multimodal Weibull distribution agreed favorably with that of the measured three-point bend strength values. A two-modal Weibull distribution function was formulated approximately from the distributions of the tensile and three-point bend strengths, and the estimated two-modal Weibull distribution function for the four-point bend strength agreed well with the measured four-point bend strength.