Electronic structure characterization of ultra low-k carbon doped oxide using soft X-ray emission spectroscopy

In this study we report the electronic structure of ultra low-k dielectric constant carbon doped oxide (CDO) films, which have a k value of 2.4, using synchrotron radiation-excited resonant soft X-ray emission (SXE) spectroscopy. Conventional X-ray photoemission spectroscopy was used to determine that the chemical composition of the material was Si-31%, C-15% and O-54%. The C and O partial density of states for the valence bands has been measured by SXE. Radiation induced changes in the chemical bonding in the material have been identified and these can be minimised by continuously translating the sample during measurement. The spectral changes induced by the radiation damage are consistent with the breaking of Si–CH₃ bonds in the material and the formation of graphitic C = C double bonds. Investigation of the origin of a low energy subband in the C K spectrum reveal that it can be attributed to O K emission excited by second order rather than the hybridization of C 2p states in the CDO layer.     

OPERATING CONDITIONS IN THE OPEN HEARTH AS THEY AFFECT THE LIFE OF REFRACTORIES

A discussion of the deterioration of refractories under operating conditions of the acid and basic types of open hearth furnaces is given.     

Reduction of common-source inductance in FET/HEMT structuresutilizing wave-propagation effects

In this paper, a novel high-frequency/high-power field-effect-transistor structure is presented to reduce gain degradation caused by common-source inductance. In this structure, the reduction in common-source inductance is achieved without the need for using very thin substrates or very complicated fabrication technology, such as vias under each source finger. Using detailed transmission-line modeling, it is shown that a significant reduction in common-source inductance and improvement in RF performance can be achieved even for moderately high values of source grounding via inductance. The new structure allows simpler fabrication technology and is expected to be particularly useful to reduce the cost and improve the performance of high-power microwave and millimeter-wave devices and circuits     

CEA总裁兼CEO——Shapiro评论美消费电子领域热门事件

CEA总裁兼CEO最近在关注一些热门事件,其中包括消费电子制造工厂——中国给美国经济带来的挑战和数字电视的转换本月初,CEA举行了为期两天的"华盛顿论坛",第一天主要讨论自由贸易,第二天则围绕2009年2月将实行的高清数字电视转换事件,进行讨论。     

A new high density magnetoresistive tape head

An 8-track magnetic tape head for high-frequency, high-density applications is described. It includes an unshielded magnetoresistive read head and two thin-film record heads for bidirectional operation with write verification. The MR sensors are biased by specially shaped thin-film permanent magnets (PM) that provide fields along both sensor axes to linearize output and eliminate Barkhausen noise. Nearly all films in the head are deposited using dry processes. Deposition conditions for the PM have been optimized to produce a high-coercivity, high-remanence isotropic film. The final head assembly has a contour that utilizes longitudinal slots to achieve intimate contact with low head-to-tape pressure. The associated data channel uses both read and write equalization to obtain the desired output pulse shape from the unshielded head     

Design basis reconstitution and configuration management of nuclear power plants

This paper presents a method by which all plants (those under construction, as well as those in operation) can benefit from a formal, step-by-step approach to data capture, storage, and retrieval for use throughout the plant life cycle. To demonstrate the viability and in-practice success of a single three-dimensional Configuration Management database, the specific capabilities of one such system are discussed in detail: the Plant Configuration Management System (PLANT/CMS).