Influence of glycerol on the mechanical reversibility and thermal damage susceptibility of collagenous tissues

Clinical procedures wherein supraphysiologic temperatures must be achieved in deep layers of tissue via light are often compromised by optical scattering and absorption. Optical clearing of tissue superficial to the target improves the efficacy of such procedures. Glycerol is an attractive chemical agent for achieving dramatic reductions in tissue turbidity, but its net effects on healthy tissue are not fully understood. In this paper, we investigate possible alterations of biaxial mechanical properties in a model collagenous tissue, bovine epicardium, induced by glycerol. Furthermore, we examine the effects of glycerol on the biaxial thermomechanical properties of epicardium constrained at near-physiologic length. It is seen that mechanical changes induced by glycerol are fully reversed upon rehydration in normal saline. Moreover, glycerol protects cleared tissue by increasing its thermal stability and minimizing thermal alterations of mechanical properties.     

Dissolution behavior of Cu and Ag substrates in molten solders

This study investigated the dissolution behavior of Cu and Ag substrates in molten Sn, Sn-3.5Ag, Sn-4.0Ag-0.5Cu, Sn-8.6Zn and Sn-8.55Zn-0.5Ag-0.1Al-0.5Ga lead-free solders as well as in Sn-37Pb solder for comparison at 300, 350, and 400°C. Results show that Sn-Zn alloys have a substantially lower dissolution rate of both Cu and Ag substrates than the other solders. Differences in interfacial intermetallic compounds formed during reaction and the morphology of these compounds strongly affected the substrate dissolution behavior. Soldering temperature and the corresponding solubility limit of the substrate elements in the liquid solder also played important roles in the interfacial morphology and dissolution rate of substrate.     

An Integrated Assessment of the Impacts of Hydrogen Economy on Transportation, Energy Use, and Air Emissions

This paper presents an analysis of the potential system-wide energy and air emissions implications of hydrogen fuel cell vehicle (H ₂-FCV) penetration into the U.S. light duty vehicle (LDV) fleet. The analysis uses the U.S. EPA MARKet ALlocation (MARKAL) technology database and model to simultaneously consider competition among alternative technologies and fuels, with a focus on the transportation and the electric sectors. Our modeled reference case suggests that economics alone would not yield H₂-FCV penetration by 2030. A parametric sensitivity analysis shows that H₂-FCV can become economically viable through reductions in H ₂-FCV costs, increases in the costs of competing vehicle technologies, and increases in oil prices. Alternative scenarios leading to H₂-FCV penetration are shown to result in very different patterns of total system energy usage depending on the conditions driving H₂-FCV penetration. Overall, the model suggests that total CO₂ emissions changes are complex, but that CO₂ emission levels tend to decrease slightly with H₂-FCV penetration. While carbon capture and sequestration technologies with H ₂ production and renewable technologies for H₂ production have the potential to achieve greater CO₂ reductions, these technologies are not economically competitive within our modeling time frame without additional drivers     

Solution‐Processed Small‐Molecule Bulk Heterojunction Ambipolar Transistors

Solution‐processed small‐molecule bulk heterojunction (BHJ) ambipolar organic thin‐film transistors are fabricated based on a combination of [2‐phenylbenzo[d,d']thieno[3,2‐b;4,5‐b']dithiophene (P‐BTDT) : 2‐(4‐n‐octylphenyl)benzo[d,d ']thieno[3,2‐b;4,5‐b']dithiophene (OP‐BTDT)] and C₆₀. Treating high electrical performance vacuum‐deposited P‐BTDT organic semiconductors with a newly developed solution‐processed organic semiconductor material, OP‐BTDT, in an optimized ratio yields a solution‐processed p‐channel organic semiconductor blend with carrier mobility as high as 0.65 cm² V^?1 s^?1. An optimized blending of P‐BTDT:OP‐BTDT with the n‐channel semiconductor, C₆₀, results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm² V^?1 s^?1, respectively. Furthermore, a complementary‐like inverter composed of two ambipolar thin‐film transistors is demonstrated, which achieves a gain of 115.     

Solution‐Processed High‐Performance Tetrathienothiophene‐Based Small Molecular Blends for Ambipolar Charge Transport

Four soluble dialkylated tetrathienoacene ( TTAR) ‐based small molecular semiconductors featuring the combination of a TTAR central core, π‐conjugated spacers comprising bithiophene ( bT ) or thiophene ( T ), and with/without cyanoacrylate ( CA ) end‐capping moieties are synthesized and characterized. The molecule DbT‐TTAR exhibits a promising hole mobility up to 0.36 cm² V^?1 s^?1 due to the enhanced crystallinity of the microribbon‐like films. Binary blends of the p‐type DbT‐TTAR and the n‐type dicyanomethylene substituted dithienothiophene‐quinoid ( DTTQ‐11 ) are investigated in terms of film morphology, microstructure, and organic field‐effect transistor (OFET) performance. The data indicate that as the DbT‐TTAR content in the blend film increases, the charge transport characteristics vary from unipolar (electron‐only) to ambipolar and then back to unipolar (hole‐only). With a 1:1 weight ratio of DbT‐TTAR DTTQ‐11 in the blend, well‐defined pathways for both charge carriers are achieved and resulted in ambipolar transport with high hole and electron mobilities of 0.83 and 0.37 cm² V^?1 s^?1, respectively. This study provides a viable way for tuning microstructure and charge carrier transport in small molecules and their blends to achieve high‐performance solution‐processable OFETs.     

Interfacial Connections between Organic Perovskite/n+ Silicon/Catalyst that Allow Integration of Solar Cell and Catalyst for Hydrogen Evolution from Water

The rapidly increasing solar conversion efficiency (PCE) of hybrid organic–inorganic perovskite (HOIP) thin-film semiconductors has triggered interest in their use for direct solar-driven water splitting to produce hydrogen. However, application of these low-cost, electronic-structure-tunable HOIP tandem photoabsorbers has been hindered by the instability of the photovoltaic-catalyst-electrolyte (PV+E) interfaces. Here, photolytic water splitting is demonstrated using an integrated configuration consisting of an HOIP/n⁺silicon single junction photoabsorber and a platinum (Pt) thin film catalyst. An extended electrochemical (EC) lifetime in alkaline media is achieved using titanium nitride on both sides of the Si support to eliminate formation of insulating silicon oxide, and as an effective diffusion barrier to allow high-temperature annealing of the catalyst/TiO₂-protected-n⁺silicon interface necessary to retard electrolytic corrosion. Halide composition is examined in the (FA_1-xCs_x)PbI₃ system with a bandgap suitable for tandem operation. A fill factor of 72.5% is achieved using a Spiro-OMeTAD-hole-transport-layer (HTL)-based HOIP/n⁺Si solar cell, and a high photocurrent density of −15.9 mA cm⁻² (at 0 V vs reversible hydrogen electrode) is attained for the HOIP/n⁺Si/Pt photocathode in 1 m NaOH under simulated 1-sun illumination. While this thin-film design creates stable interfaces, the intrinsic photo- and electro-degradation of the HOIP photoabsorber remains the main obstacle for future HOIP/Si tandem PEC devices.     

Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum Barriers

We have studied the performance of double-quantum-barrier [TaN-Ir₃Si]-[HfAlO-LaAlO₃]-Hf_0.3N_0.2O_0.5-[HfAlO-SiO₂]-Si charge-trapping memory devices. These devices display good characteristics in terms of their plusmn9-V program/erase (P/E) voltage, 100-mus P/E speed, initial 3.2-V memory window, and ten-year extrapolated data retention window of 2.4 V at 150 degC. The retention decay rate is significantly better than single-barrier MONOS devices, as is the cycled retention data, due to the reduced interface trap generation.     

Design techniques for single-low-V/sub DD/ CMOS systems

In this paper, a new CMOS design scheme called the single-low-V/sub DD/ CMOS (SLVCMOS) is proposed. With this scheme, a CMOS design implemented in a multi-V/sub TH/ CMOS technology can be operated with a very low external supply voltage, say 0.5-V, with a sleep current at the level of only picoampere per gate. The key items for a single-chip SLVCMOS design include a sleepless mixed-V/sub TH/ flip-flop, a boosted sleeping clock signal, and three low-power hard blocks. Analysis shows that additional benefits of using the SLVCMOS include higher performance and lower power consumption in the active mode, smaller leakage current in the sleep mode, shorter wake-up time and reduced wake-up energy during the sleep-to-active transition, and a reduced number of sleep-control signals, saving precious routing resources and reducing the chip area. A dual-rail SLVCMOS cell library and two test chips, one 32-b RISC core and the other verifying the design of hard blocks, are designed and implemented to show the feasibility of the proposed design scheme and the design techniques.     

Bipolar switching characteristics of low-power Geo resistive memory

We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO_x dielectric. This cost-effective Ni/GeO_x/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.     

Temperature and current-density distributions in flip-chip solder joints with Cu traces

Three-dimensional simulation was performed to investigate the temperature and current density distribution in flip-chip solder joints with Cu traces during current stressing. It was found that the Cu traces can reduce the Joule heating effect significantly at high stressing currents. When the solder joints were stressed by 0.6 A, the average temperature increases in solder bumps with the Al traces was 26.7°C, and it was deceased to 18.7°C for the solder joint with the Cu traces. Hot spots exist in the solder near the entrance points of the Al or Cu traces. The temperature increases in the hot spot were 29.3°C and 20.6°C, for solder joints with the Al traces and Cu traces, respectively. As for current density distribution, the maximum current density inside the solder decreased slightly from 1.66×10⁵ A/cm² to 1.46×10⁵ A/cm² when the Al traces were replaced by the Cu traces. The solder joints with the Cu traces exhibited lower Joule heating and current crowding effects than those with the Al traces, which was mainly attributed to the lower electrical conductivity of the Cu traces. Therefore, the solder joints with the Cu traces are expected to have better electromigration resistance.