Ultrasonic thin-walled tube wave structure for sensing devices

Theoretical and experimental investigations of thin-walled tube acoustic wave devices for gravimetric sensing applications are presented. Integrated sensor configurations have been demonstrated by employing a sol-gel processed thin piezoelectric lead zirconate titanate (PZT) film. This was coated coaxially on stainless steel tubes and interdigital transducers (IDT) fabricated as the transmitter and receiver on the curved tube surfaces. We have observed tube waves along both the axial and circumferential directions between 1 and 6.6 MHz. We have also analyzed the mass sensitivities of different modes propagating along the tubes and shown that high mass sensitivity can be achieved by keeping the tube wall thin     

用αβ谱仪测量人工αβ放射性气溶胶体积活度的试验研究

本文介绍了用αβ谱仪系统同时测量αβ谱、实现Ｒｎ／Ｔｈ子体补偿、确定超铀α核素气溶胶体积活度及人工放射性气溶胶总β体积活度的技术途径。利用ＲａＡ、ＲａＣ′ａ峰的二段时间计数可确定空气中ＲａＡ、ＲａＢ、ＲａＣ的气溶胶体积活度，相应的，也能给出ＲａＢ、ＲａＣ对总β计数的贡献。根据一般环境条件下的平衡比，用ＴｈＣ′的。计数修正Ｔｈ子体对αβ测量的影响。￣［２３９］ｐｕ或／和￣［２４１］Ａｍ人工核素的α计数，可通过两段时间分别扣除ＲａＡ、ＲａＣ′拖尾的方法确定；β计数分别扣除Ｒｎ／Ｔｈ子体β贡献即可确定。在本文规定的测量条件下，对室内天然Ｒｎ子体水平在１５Ｂｑ／ｍ￣３以下，超铀α核素气溶胶体积活度的测量下限可达到０．１Ｂｑ／ｍ￣３；即使在７５Ｂｑ／ｍ￣３环境下，人工核素总β的测量下限也可达ｌＢｑ／ｍ￣３以下。     

Dynamic fields generated by rapid crack growth

Stresses and strains near a rapidly propagating crack tip are affected by the mass density of the material. This paper starts with a brief summary of analytical results for near-tip dynamic fields as predicted by linear elastic fracture mechanics. Next, exact expressions are derived for dynamic crack-line strains, for mode-III crack propagation in a nonlinear elastic material and in an elastic perfectly-plastic material. These expressions are valid on the crack line from the moving crack tip to the moving boundary with the region of linearly elastic deformation. For steady-state crack growth, a critical strain criterion is used to compute the relation between external load and crack tip speed. The required external load increases with crack-tip speed.     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

一种可用于可调谐环行Ti：Al_2O_3激光器的宽带单向器

本文介绍一种宽带单向器的原理及设计。选用ＴＧＧ作磁旋光介质，旋光石英晶片作补偿片，所设计的色散补偿型宽带单向器预计可在７００～１０００ｎｍ波长范围内实现环行激光腔中的单向行波运行；将其应用在可调谐环行Ｔｉ：Ａｌ２Ｏ３激光器中，获得了良好的实验结果。     

Lubricating behavior of iron rhenate and its relation to matching pairs

The iron rhenate was compounded by chemical method, which may be generated during wear process of Fe-Re alloys at elevated temperature. The friction coefficient of iron rhenate has been determined by a pin-on-disc device. The results show that iron rhenate plays role of lubricating at RT-600 °C. The lubricating behavior is related to the matching pairs. The hardness of the materials of matching pairs, compatibility of iron rhenate with materials of matching pairs and surface roughness of disc affect the lubricating behavior of iron rhenate mostly. The principle of matching pairs is proposed. Project supported by the National Natural Science Foundation of China Synopsis of the first author Xiong Dangsheng. associated professor, born in 1960. Current research fields include high-temperature self-lubricating alloys and tribological properties of material.