后桥壳的可靠性优化设计

该文讨论了后桥壳的可靠性优化设计问题.在基本随机变量的概率特性已知的情况下,应用随机摄动法和约束随机方向法对后桥壳进行可靠性优化设计,并编制了实用的计算机程序,可以迅速准确地得到后桥壳的可靠性设计参数.     

氟碳铈矿／直氟碳钙铈矿混层结构中新规则混层矿物的超微结构研究

用电子衍射和晶格像技术研究了钙稀土氟碳酸盐矿物中的氟碳铈矿（Ｂ）／直氟碳钙铈矿（Ｓ）混层结构，发现并确定了Ｂ＿４Ｓ＿４、Ｂ＿８Ｓ＿６、Ｂ＿１Ｓ＿６、Ｂ＿７Ｓ＿４和Ｂ＿２Ｓ＿１５种新规则混层矿物的对称性、晶胞参数及理论晶体化学式。根据所获得的高分辨晶格像真实而直观地揭示出该类Ｂ＿ｍＳ＿ｎ（ｍ＞ｎ）型新规则混层矿物的长周期有序堆垛结构特征及变化规律。     

Comparisons of PWM and one-cycle control for power amplifier with multilevel converter

Based on the concepts of cascade multilevel converters and one-cycle technique, comparisons are conducted to characterize the distortion of the pulsewidth modulation (PWM) and one-cycle control methods that were applied to converters. Simulation results for the different control schemes are obtained in PSIM software initially to see the effect of one-cycle control different from that of PWM control. Through the comparisons, the advantages and disadvantages are identified for each method. The one-cycle scheme is better than PWM control in reducing undesirable harmonics and tracing dynamic waveforms. Simulation and experimental results are also provided to verify the conclusions.     

用CPLD实现的高速数字图像存储转发装置

本文叙述了一种利用CPLD器件实现的高速数字图像存储转发装置,它被用于一个数字视频图像传输系统中.该装置的主要功能是将来自于CCD的数字图像数据存入大容量存储器中,并可以对数据进行编码,变换成PCM码输出.由于采用了VHDL语言设计,实现了分立器件难以实现的功能,提高了系统的可靠性,并可以方便地移植到各种CPLD器件中.     

A time domain approach for avoiding crosstalk in optical blockingmultistage interconnection networks

Crosstalk in multistage interconnection networks can be avoided by ensuring that a switch is not used by two connections simultaneously, in order to support crosstalk-free communications among N inputs and N outputs, a space domain approach dilates an N×N network into one that is essentially equivalent to a 2N×2N network. Path conflicts, however may still exist in dilated networks. This paper proposes a time domain approach for avoiding crosstalk. Such an approach can be regarded as “dilating” a network in time, instead of space. More specifically, the connections that need to use the same switch are established during different time slots. This way, path conflicts are automatically avoided. The time domain dilation is useful for overcoming the limits on the network size while utilizing the high bandwidth of optical interconnects. We study the set of permutations whose crosstalk-free connections can be established in just two time slots using the time domain approach. While the space domain approach trades hardware complexity for crosstalk-free communications, the time domain approach trades time complexity. We compare the proposed time domain to the space domain approach by analyzing the tradeoffs involved in these two approaches     

特低渗油藏水平井布井方式研究

本文以西峰油田董志区长8油藏为例，运用数值模拟技术，研究了水平井组合方式及其井网形式。研究结果表明，水平井是提高特低渗油藏开发效果的有效途径。结合长庆特低渗储层吸水性能好的特点，认为采用直井注水，水平段走向垂直于储层最大主应力方位的水平井采油的井网组合开发效果最佳。     

FLORA HJII 3200/12SE升级型数码喷绘机

神HJII 3200／12SE（简称：3212SE）是其工业级数码喷绘机系列中的重要一款。其外观稳重大方，速度卓越非凡，图像输出精美。此款机器近年已先后在国内外各种展会上展示，包括美国的ISA、SGIA展会，德国的FESPA展会以及我国的上海国际展等。依靠其杰出的性能，3212SE得到了众多客户特别是欧美客户的青睐。     

YAG：Ce Phosphors for WLED via Nano-Pesudoboehmite Sol-Gel Route

The sub-micron sized YAG ： Ce phosphors were synthesized via a modified sol-gel method by peptizing nano-pesudoboehmite particulate. It is found that YAG phase from the dried gel powders appears at 1000 ℃ then the pure YAG phase exists at a relatively lower sintering temperature of 1400 ℃. The smaller sizes of phosphors in the ranges of 1 - 3 μm are obtained due to the contribution of seeding effects of nano-sized alumina particles to strengthen each step of the processes. Both the excitation and emission spectra of photoluminescence of the phosphor obtained at 1400 ℃ meet well with the spectroscopic requirements of the WLED phosphors.     

规范经营管理提高经济效益

通过3个电站的调研，对作为小水电企业而言，只有切实加强工程建设管理，实行项目法人责任制，就能确保电站工程建设达到设计要求、工程质量优良；提高电站自动化运行水平，更能保证电能质量、电网运行安全稳定、降低发电成本；进一步规范电站管理，对人员实行“工效挂钩、绩效挂钩”，才能进一步提升市场竞争力、提高经济效益。     

微波等离子体化学气相沉积的 a-Si∶H 性能研究

本文着重对微波等离子体化学气相沉积法高速沉积的 a-Si∶H 膜的物理性能进行评价研究.测量了沉积膜的光电性能、暗电导激活能、光禁带宽度、光吸收特性、沉积膜中悬键态密度以及氢含量等,并讨论沉积条件对膜性能的影响.结果表明,在沉积速率高达30～90(?)/s 情况下,膜的光电导(光照强度10~5Lux)与暗电导比值可达10~3～10~5,暗电导率从10~(-3)到10~(-11)((?)cm)~(-1),其激活能在0.23～0.88eV 之间(0～200℃温度范围内),光禁带宽度为1.40～2.20eV,氢含量约为2～20%.