基于POSC的测井曲线数据存储管理系统

在基于POSC标准的基础上，分析了POSC EPICENTER数据模型，对油田中普遍使用的LS716测井大块数据在磁盘和远程自动磁带库之间实现了一体化的数据管理，开发了数据加载，数据删除，头信息浏览线回施行能模块。该系统特点是，管理信息加载到POSC数据仓中，而真正的数据体以外部数据文件的形式存放，使得大块数据的加载和提取速度大大提高，同时，在数据仓库和远程带库之间实现了一体化的数据管理。     

电算法在液压支架受力分析中的应用

建立支架受力分析的电算设计数学模型并给出程序框图     

长距离钢带传动的张紧机构设计与应用

比较了几种长距离传动方式的特点与适用场合，重点探讨了实现长距离精密传动的技术要点。结合实际工程，完成了长距离钢带精密传动的应用，并指出张紧机构的设计与应用是钢带实现长距离精密传动的关键。为此文中对钢带传动的典型张紧机构进行了比较，并分析了这几类张紧机构的应用情况，有参考和应用价值。     

气液固三相相平衡热力学模型与计算方法

原油中含有大量的高分子有机固相物质，因此，要准确地描述油气体系相平衡，必须对气液固三相相平衡进行研究，在对高分子有机烃类沥青沉降机理有了一定的认识的基础上，提出了大的交互作用系数，可以描述沥青与原油中轻质不相容性的程度。根据对油气烃类混合物体系的一般性认识与提出的沥青组分特征化方法，导出了与之相应的有其自身特殊性的气液沥青三相相平衡物料平衡方程组，用考虑沥青沉降三相闪蒸数值算法，对沥青沉降进行有效的理化模拟计算，此外，结合实例分析，给出了沥青质参考逸度的计算，饱和压力和沉降量的拟合方法。     

Effects of extended dislocations on charge distribution in GaN epilayer

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.     

Quantitative analysis of Ni effect on CCT diagrams of novel air-cooled bainite steels using artificial neural network models

The quantitative effect of Ni content on continuous cooling transformation （CCT） diagrams of novel air-cooled bainite steels was analyzed using artificial neural network models. The results showed that Ni may retard the high- and medium-temperature transformation and martensite transformation. The results conform to the materials science theories.     

Impact of nonlinear phase noise on direct-detection DQPSK WDM systems

The performance degradation of differential quadrature phase-shift keying (DQPSK) wavelength-division-multiplexed (WDM) systems due to self-phase modulation (SPM)- and cross-phase modulation (XPM)-induced nonlinear phase noise is evaluated in this letter. The XPM-induced nonlinear phase noise is approximated as Gaussian distribution and summed together with the SPM-induced nonlinear phase noise. We demonstrate that 10-Gb/s systems, whose walkoff length is larger than 40-Gb/s systems', are more sensitive to XPM-induced nonlinear phase noise than 40-Gb/s systems. Furthermore, DQPSK WDM systems show lower tolerance to both SPM- and XPM-induced nonlinear phase noise than differential phase-shift keying WDM systems.     

A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC

A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation.     

烯烃聚合单活性中心非茂催化剂的最新研究进展

综述了近几年来烯烃聚合用单活性中心非茂催化剂的研究进展。简要介绍了 2 3种由前、后过渡金属组成的配位化合物催化剂的结构与性能     

A study on charge reduction in HfO/sub 2/ gate stacks

Charge in metal-organic chemical vapor deposition-grown HfO/sub 2/ gate stacks has been systematically studied using nMOS capacitors. It is found that, for these films, the charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO/sub 2//interfacial layer (IL) interface and positive at the Si/IL interface. In general, the calculated charge densities at both interfaces are of order 10/sup 12/ cm/sup -2/. A forming gas anneal (FGA) reduces both interface charge greatly. The FGA can also significantly reduce the hysteresis and interface state density. The effects of post deposition anneal at various temperatures and under various ambients have also been studied. It is found that a high-temperature dilute oxidizing ambient anneal followed by an FGA reduces the charge at both interfaces.