A 0.6–2.7 GHz Semidynamic Frequency Divide-by-3 Utilizing Wideband RC Polyphase Filter in 0.18 $mu$m CMOS

A wideband complementary metal oxide semiconductor (CMOS) semidynamic frequency divide-by-3 covering more than two octave bandwidths is presented. The wideband operation without requiring a quadrature signal source is realized by employing a three-stage RC polyphase filter. The transfer function analysis on Type-II two- and three-stage polyphase filters is performed to provide analytic solutions of the peak phase error and peak attenuation. Implemented in 0.18 mum CMOS, the divide-by-3 operates over the input frequency range between 0.6 and 2.7 GHz while dissipating 15 mA from a 1.8 V supply.     

Noise–Power Optimization of Incremental Data Converters

Incremental data converters (IDCs) are useful in instrumentation and measurement applications, where low-frequency analog signals need to be converted into digital form with high accuracy and low power dissipation. They are particularly well suited for applications where a single analog-digital converter is multiplexed between many channels. This paper proposes an exact design methodology for IDCs, which optimizes the signal-to-noise ratio of the converter under practical design constraints. The process also allows the designer to apportion the noise budget in an arbitrary manner between thermal and quantization noise. The design process is illustrated by an example which describes the optimization of a third-order multiplexed IDC.     

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 10⁴. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs.     

Performance modeling and evaluation of data/voice services in wireless networks

Application-level performance is a key to the adoption and success of the CDMA 2000. To predict this performance in advance, a detailed end-to-end simulation model of a CDMA network is built to include application traffic characteristics, network architecture, network element details using the proposed simulation methodology. We assess the user-perceived application performance when a RAN and a CN adopt different transport architectures such as ATM and IP. To evaluate the user-perceived quality of voice service, we compare the end-to-end packet delay for different vocoder schemes such as G.711, G.726 (PCM), G.726 (ADPCM), and vocoder bypass scheme. By the simulation results, the vocoder bypass scenario shows 30% performance improvement over the others. We also compare the quality of voice service with and without DPS scheduling scheme. We know that DPS scheme keep the voice delay bound even if the service traffic is high. For data packet performance, HTTP v.1.1 shows better performance than that of HTTP v.1.0 due to the pipelining and TCP persistent connection. We may conclude that IP transport technology is better solution for higher FER environment since the packet overhead of IP is smaller than that of ATM for web browsing data traffic, while it shows opposite effect to the small size voice packet in RAN architecture. We show that the 3G-1X EV-DO system gives much better packet delay performance than 3G-1X RTT. The main conclusion is that end-to-end application-level performance is affected by various elements and layers of the network and thus it must be considered in all phases of the development process. Jae-Hyun Kim He received the B.S., M.S., and Ph.D. degrees, all in computer science and engineering, from Hanyang University, Ansan, Korea, in 1991, 1993, and 1996 respectively. In 1996, he was with the Communication Research Laboratory, Tokyo, Japan, as a Visiting Scholar. From April 1997 to October 1998, he was a post-doctoral fellow at the department of electrical engineering, University of California, Los Angeles. From November 1998 to February 2003, he worked as a member of technical staff in Performance Modeling and QoS management department, Bell laboratories, Lucent Technologies, Holmdel, NJ. He has been with the department of electrical engineering, Ajou University, Suwon, Korea, as an assistant professor since 2003. His research interests include QoS issues and cross layer optimization for high-speed wireless communication. Dr. Kim was the recipient of the LGIC Thesis Prize and Samsung Human-Tech Thesis Prize in 1993 and 1997, respectively. He is a member of the Korean Institute of Communication Sciences (KICS), Korea Institute of Telematics and Electronis (KITE), Korea Information Science Society (KISS), and IEEE. Hyun-Jin Lee received the B.S. degree in electrical engineering from Ajou University, Suwon, Korea, in 2004, and is working toward the M.S. degree and Ph. D. degree in electrical engineering at Ajou University. He has been awarded Samsung Human-Tech Thesis Prize in 2004. His research interests QoS, especially network optimization and wireless packet scheduling. He is a member of the KICS. Sung-Min Oh received the B.S. and M. S. degrees in electrical engineering form Ajou University, Suwon, Korea, in 2004, and is working toward the Ph. D. degree in electrical engineering at Ajou University. His research interests QoS performance analysis and 4G network. He is a member of the KICS. Sung-Hyun Cho received his B.S., M.S., and Ph.D. in computer science and engineering from Hanyang University, Korea, in 1995, 1997, and 2001, respectively. From 2001 to 2005, he has been with Samsung Advanced Institute of Technology, where he has been engaged in the design and standardization of MAC and upper layers of B3G, IEEE 802.16e, and WiBro systems. He is currently a MAC part leader in the telecommunication R&D center of Samsung Electronics. His research interests include 4G air interface design, radio resource management, cross layer design, and handoff in wireless systems.     

Collision-Free Interleaver Composed of a Latin Square for Parallel-Architecture Turbo Codes

In parallel-architecture turbo codes, the constituent interleavers must avoid memory collision. This paper proposes a collision-free interleaver structure composed of a Latin square (LS) and pre-designed interleavers. Our proposed interleavers can be easily optimized for various information block sizes and for various degrees of parallelism. Their performances were evaluated by computer simulation.     

Virtual circuit connection method for RSVP multicasting supportingheterogeneous receivers on the ATM network

The authors suggest a novel virtual circuit connection method based on the reverse traversing technique to minimise the waste of network bandwidth resources, when the Internet protocol multicast is interoperated using the resource reservation protocol over an asynchronous transfer mode network. Simulation results show that, as the number of receivers increases, the bandwidth requirements on all links of the network of the proposed scheme become more advantageous than those of other conventional methods     

Interfacial reactions in the squeeze-cast (SAFFIL+C)/SAE 329 Al composite

Interfacial reactions in the squeeze-cast SAE 329 Al alloy reinforced with SAFFIL and carbon fibers were investigated using scanning and transmission electron microscopy and secondary ion mass spectroscopy. The SiO₂ layer added as a binder for the preform of SAFFIL fiber appeared to prevent excessive reaction between the fiber and the molten Al alloy during casting. In the as-cast composite, the reaction between the SiO₂ layer and the Al alloy is considered to produce MgO crystals in the vicinity of SAFFIL fiber. With subsequent heat treatment of the composite to the T6 condition, small crystals of MgO and MgAl₂O₄ were found to form at the surface of SAFFIL fiber as a result of interfacial reaction between the SiO₂ layer and the Al alloy. Even at the T6 condition, significant reactions between the Al alloy and SAFFIL fiber itself were not observed, indicating the effective role of the binder layer in suppressing the degradation of SAFFIL fiber by reaction with the Al alloy.     

HEURISTIC APPROACHES FOR LOADING PROBLEMS IN FLEXIBLE MANUFACTURING SYSTEMS

Flexible manufacturing systems (FMSs) are able to process a wide variety of operations, but the specific mix of operations that can be performed at any point in time depends upon the combination of tools loaded onto the machines. The machines have tool magazines with finite capacities. We consider the problem of assigning operations and their associated tools to machines (or groups of machines) to maximize the throughput for a specified steady-state mix of orders. Since this objective is difficult to deal with directly, we use an intermediate objective of meeting workload targets for each machine group as closely as possible. A certain form of this intermediate objective has been shown to correlate highly with the original objective.

Since it is computationally intractable to find optimal solutions for problems with more than 20 operations, fast heuristic algorithms are developed. These algorithms are adapted from multi-dimensional bin-packing algorithms. Computational results are reported.     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained