SCR-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance

A new silicon controlled rectifier (SCR)-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance is proposed. The circuit function to detect positive or negative electrical transients during system-level electrostatic discharge (ESD) and electrical fast transient (EFT) tests has been verified in silicon chip. The experimental results in a 0.18-μm CMOS process have confirmed that the new proposed detection circuit can successfully memorize the occurrence of system-level electrical transient disturbance events. The detection results can be cooperated with firmware design to execute system recovery procedures, therefore the immunity of microelectronic systems against system-level ESD or EFT tests can be effectively improved.     

Electrostatic discharge protection scheme without leakage current path for CMOS IC operating in power-down-mode condition on a system board

A new design on the electrostatic discharge (ESD) protection scheme for CMOS IC operating in power-down-mode condition is proposed. By adding a VDD_ESD bus line and diodes, the new proposed ESD protection scheme can block the leakage current from I/O pin to VDD power line to avoid malfunction during power-down-mode operating condition. During normal circuit operating condition, the new proposed ESD protection schemes have no leakage path to interfere with the normal circuit functions. The whole-chip ESD protection design can be achieved by insertion of ESD clamp circuits between VSS power line and both VDD power line and VDD ESD bus line. Experimental results have verified that the human-body-model (HBM) ESD level of this new scheme can be greater than 7.5 kV in a 0.35-μm silicided CMOS process. Furthermore, output-swing improvement circuit is proposed to achieve the full swing of output voltage level during normal circuit operating condition.     

Overview on electrostatic discharge protection designs for mixed-voltage I/O interfaces: design concept and circuit implementations

Electrostatic discharge (ESD) protection design for mixed-voltage I/O interfaces has been one of the key challenges of system-on-a-chip (SOC) implementation in nano-scale CMOS processes. The on-chip ESD protection circuit for mixed-voltage I/O interfaces should meet the gate-oxide reliability constraints and prevent the undesired leakage current paths. This paper presents an overview on the design concept and circuit implementations of the ESD protection designs for mixed-voltage I/O interfaces without using the additional thick gate-oxide process. The ESD design constraints in mixed-voltage I/O interfaces, the classification and analysis of ESD protection designs for mixed-voltage I/O interfaces, and the designs of high-voltage-tolerant power-rail ESD clamp circuit are presented and discussed.     

ESD protection for output pad with well-coupled field-oxide devicein 0.5-μm CMOS technology

A well-coupled field-oxide device (WCFOD) is first proposed to effectively improve Electrostatic Discharge (ESD) robustness of the output pad in a 0.5-μm CMOS process. ESD-transient voltage is coupled to the bulk of field-oxide device through a parasitic capacitor to trigger on the lateral bipolar action of the field-oxide device. This WCFOD has been practically implemented in a 256-K high-speed SRAM product to sustain HBM ESD stress up to 6500 V     

CMOS chip as luminescent sensor for biochemical reactions

We describe a novel biochemical sensing method and its potential new biosensing applications. A light-sensitive complementary metal oxide semiconductor (CMOS) chip prepared through a standard 0.5-/spl mu/m CMOS process was developed for measuring biochemical reactions. A light producing enzymatic reaction catalyzed by horseradish peroxidase (HRP) was designed as a platform reaction to determine the concentration of hydrogen peroxide (H/sub 2/O/sub 2/) by the CMOS chip with a standard semiconductor parameter analyzer (HP4145). The kinetics of enzymatic reaction were determined and compared with a standard and sophisticated fluorometer (Hitachi F-4500) in a biochemical laboratory. Similar results were obtained by both instruments. Using glucose oxidase as an example, we further demonstrated that the HRP platform can be used to determine other H/sub 2/O/sub 2/ producing reactions with the CMOS system. The result points to an important application of the CMOS chip in biological measurements and in diagnosis of various health factors.     

Scleral buckling with Bioplast fibrin in retinal detachment

The study includes a series of 38 patients with retinal detachment of different aetiology. Scleral reduction combined with the intrascleral implantation of absorbable Bioplast fibrin scleral buckling rods was performed and reattachment achieved in 31 cases. The implant material is biocompatible and is eliminated from the eye in the course of a few weeks.     

Determination of electron drift velocity in a gaseous discharge from Doppler shifts of plasma waves

Measurements of Doppler shifts of plamsa waves in a low-pressure mercury-vapour discharge have been made, in order to determine the electron drift velocity in the positive column. It is concluded that, within the accuracy of the expenments, there is no radial variaton of the electron drift velocity in the discharge.     

On the complex poisson's ratio of a urethane rubber compound

The complex Poisson's ratio of a urethane rubber compound was determined for frequencies up to 700 cps. It is shown that the assumption made by earlier workers using this material, that Poisson's ratio is a numerical constant slightly less than 1/2, while approximately correct at low (creep) frequencies is definitely invalid in certain more elevated frequency bands.     

Ein Beitrag zur Berechnung der Stoßspannungsverteilung in Wicklungen von rotierenden Maschinen

Inhaltsübersicht 1. Problemstellung.–2. Formulierung der Bestimmungsgleichungen.–3. Ermittlung der Spannungsverteilung durch Lösung der Matrizendifferentialgleichungen.–4. Zusammenfassung.Mit 3 Textabbildungen