Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

转变观念是润滑技术现代化的必要途径

探讨了国内润滑工作存在的问题，分析了近20年来润滑技术的发展状况，介绍了国内先进单位合理用油取得的效益和经验，提出用油现代化的看法。     

受干扰波相位测量的一种新方法

为了测量受噪声和谐波干扰的两个信号间的相位差，基于自适应带通滤波器（ABF）和测量信道交换技术，提出了一种新的测量方法。ABF采用可编程开关电容滤波器（PSCF）和锁相环，明显地抑制了噪声和谐波干扰，频率跟踪范围超过四个倍频程（0．5Hz-6kHz）。用微处理器控制4个开关来交换测量信道，可以基本上消除测量通道引入的附加相位移。两种方法结合提高了相位差的测量精度。实验说明了该测量方法的有效性，该方法也适合于被测信号为慢时变情况。     

钢筋混凝土连续曲线箱梁设计探索

以上海市沪闵路高架道路二期工程SW匝道曲线箱梁设计为例 ,对曲线梁的内力特点及调整方法作了初步探索。     

基于CAN总线的多点温湿度检测系统

本文介绍了基于CAN总线的多点温湿度检测系统的整体设计,详细介绍了各部分的组成.经过现场应用表明,设计合理,可靠性高.     

姬塬油田某井区油层特征分析及解释方法

G19井区为姬塬油田主力产建区域,其低阻油层成因复杂,类型多,近几年解释困难较多,解释符合率偏低。本文从该区低阻油层特征分析入手,总结出该区油藏特征规律,并归纳出适合该区的几种有效实用的测井解释方法。     

可编程控制器在捆扎机自动控制中的应用

介绍了一种用可编程控制器（PLC）实现捆扎机自动控制的设计方案，详细地介绍了设计过程，给出了完整的程序流程图和部分控制程序。     

Phase Transition VO2 Thin Films for Optical Switches

This paper presents a method to make vanadium dioxide (VO₂) crystallites on silicon substrates by reactive ion beam sputtering. The thickness of the thin film is about 100nm. The phase transition temperature of VO₂ is 65°C. The transmittance of the semiconducting phase VO₂ is about 50% and it is reduced to as low as 3% in metal phase at the infrared wavelenghth spectrum. The extinction ratio of the optical switches is 12dB. and the insertion loss is of 1-2dB. The switching time is about 1ms.