Ion implanted GaAs varactor diodes: capacitance uniformity

Gallium arsenide varactor diodes with low series resistance (~0.25 ?) for u.h.f. t.v. tuners are developed. Uniformity and reproducibility of diode capacitance is improved markedly by using improved ion implantation and l.p.e. techniques. The standard deviation of diode capacitance distribution is 0.74% at V = 3.0 V within a wafer. A good r.f. tracking characteristic can be obtained in varactor tuners.     

Studies on polymer blends. II. Butadiene–styrene copolymers and polybutadiene–polystyrene blends

The properties of butadiene–styrene copolymers and of polybutadiene–polystyrene blends were compared. Polybutadiene, polystyrene, and four copolymers having styrene contents of 20, 40, 60, and 80% were prepared. The copolymers were compared with blends having various styrene contents and prepared by means of latex blending and roll blending. Vulcanizates were prepared by three different curing methods, i.e., sulfur cure, peroxide cure, and radiation cure. The results of the benzene extraction of three vulcanizates showed that the polystyrene blended was not cured by any of the curing methods used. The properties of the vulcanizates of the copolymers were markedly different from those of the blends, i.e., in the case of the blends the properties showed a linear relationship with their blending ratio, while in the copolymers the properties showed a curvilinear relationship which had an inflection point at a styrene content of about 60%. From this phenomenon of the copolymers, it was proposed that the second-order transition point of styrene is the cause of the properties showing this peculiar point. From the results, it was found that the behavior of styrene in copolymers is essentially different from that in blends.     

Factors influencing microstructural development in equal-channel angular pressing

Processing through the imposition of severe plastic deformation (SPD) provides an opportunity for achieving very significant grain refinement in bulk materials. Although different SPD procedures are available, the process of equal-channel angular pressing (ECAP) is especially attractive because it can be scaled easily to produce relatively large samples. This paper describes the principles of ECAP processing and demonstrates the potential for achieving unusual mechanical properties in the samples subjected to ECAP. Special emphasis is placed on the possibility of attaining a high strain rate superplastic forming capability in the as-pressed materials: examples are presented for an Al−Mg−Sc alloy prepared in the laboratory by casting and for a commercial Al-2024 alloy. This article is based on a presentation made in the 2002 Korea-US symposium on the “Phase Transformations of Nano-Materials,” organized as a special program of the 2002 Annual Meeting of the Korean Institute of Metals and Materials, held at Yonsei University, Seoul, Korea on October 25–26, 2002.     

The design and implementation of a personal sequential inference machine: PSI

A Personal Sequential Inference Machine, called PSI, is a personal computer designed as a software development tool for the Fifth Generation Computer Systems (FGCS) project. PSI has a logic based, highlevel machine instruction set, called Kernel Language Version 0 (KL0). The machine architecture of PSI is specialized for direct execution of KL0. “Unification” and “backtracking” are the principal operations in Logic Programming, and they are efficiently performed by PSI hardware/ firmware. Its estimated execution speed is 20K to 30K LIPS. The machine is also equipped with a large main memory with a maximum of 40 bits×16M words. This paper presents the key points of its design and the features of its machine architecture.     

Radical copolymerization of sulphur dioxide and styrene: 4. Intramolecular excimer formation in poly(styrene sulphone)s

Intramolecular excimer formation in poly(styrene sulphone)s with various compositions has been investigated based on the characteristic monomer sequence distributions which were determined experimentally. The fluorescence spectra of the poly(styrene sulphone)s show two emission bands at 285 nm and 330 nm as for polystyrene, corresponding to the monomer and the excimer bands, respectively. The ratio of the excimer to the monomer emission intensities (I_e/I_m) is linearly correlated with the mole fraction of styrene. This observation is a consequence of the characteristic sequence distributions in poly(styrene sulphone)s. containing a very small fraction of SMS units (S = SO₂; M = styrene). The efficiency of excimer formation in poly(styrene sulphone)s with regular styrene sequences, e.g. dyad sequence only, was calculated from the sequence distribution and empirical I_e/I_m. It is concluded that the excimer formation in poly(styrene sulphone)s is very efficient. Energy migration along the copolymer chain was also demonstrated by measuring the degree of polarization as a function of copolymer composition. The efficient excimer formation and the depolarization in poly(styrene sulphone)s suggest that the SO₂ unit in poly(styrene sulphone)s does not act as a barrier or trap to energy migration unlike the methyl methacrylate unit.     

Broad-band high-silica optical waveguide star coupler withasymmetric directional couplers

A broadband optical waveguide star coupler with asymmetric directional couplers is proposed. A coupling or splitting ratio of the coupler is flattened with respect to wavelength by choosing appropriate values for Δβ and complete power transfer length. The wavelength characteristics of uniform and alternating Δ&thetas;b directional couplers are investigated, and their broadband operation is shown theoretically. To demonstrate the feasibility of the new proposal, 8×8 star couplers composed of such asymmetric directional couplers are fabricated by using high-silica waveguides on a silicon chip. A star coupler composed of asymmetric directional couplers exhibited 2-dB loss variation in the wavelength range of 1.3-1.55 μm, and this value was almost one fourth of that of a star coupler composed of symmetric directional couplers     

Polarization- and wavelength-insensitive guided-wave optical switchwith semiconductor Y junction

A polarization- and wavelength-insensitive semiconductor guided-wave optical switch with a Y junction is proposed. The switch exhibits a digital response with respect to current, allowing its use as a wavelength-insensitive 1×2 optical switch. The switching characteristics are analyzed by using the beam propagation method, and a design example is given. The polarization- and wavelength-insensitive switching operation has been confirmed with a fabricated GaAs/GaAlAs switch at wavelengths of 1.3 and 1.55 μm, and the on/off ratio exceeded 20 dB at an injection current of 250 mA at these wavelengths