Fabrication of polymeric large-core waveguides for opticalinterconnects using a rubber molding process

Polymeric large-core (47 μm×41 μm) optical waveguides for optical interconnects have been fabricated by using a rubber molding process. For low-cost low-loss large-core waveguides, our newly developed thick-photoresist patterning process is used for a master fabrication. Also a low-loss thermocurable polymer, perfluorocyclobutane (PFCB), is used in fabricating optical waveguides by rubber molding for the first time. The propagation loss is measured to be 0.4 dB/cm at the wavelength of 1.3 μm, and 0.7 dB/cm at the wavelength of 1.55 μm     

A new on-chip interconnect crosstalk model and experimentalverification for CMOS VLSI circuit design

A new, simple closed-form crosstalk model is proposed. The model is based on a lumped configuration but effectively includes the distributed properties of interconnect capacitance and resistance. CMOS device nonlinearity is simply approximated as a linear device. That is, the CMOS gate is modeled as a resistance at the driving port and a capacitance at a driven port. Interconnects are modeled as effective resistances and capacitances to match the distributed transmission behavior. The new model shows excellent agreement with SPICE simulations. Further, while existing models do not support the multiple line crosstalk behaviors, our model can be generalized to multiple lines. That is, unlike previously published work, even if the geometrical structures are not identical, it can accurately predict crosstalk. The model is experimentally verified with 0.35-μm CMOS process-based interconnect test structures. The new model can be readily implemented in CAD analysis tools. This model can be used to predict the signal integrity for high-speed and high-density VLSI circuit design     

A 16-Bit by 16-Bit MAC Design Using Fast 5:3 Compressor Cells

3:2 counters and 4:2 compressors have been widely used for multiplier implementations. In this paper, a fast 5:3 compressor is derived for high-speed multiplier implementations. The fast 5:3 compression is obtained by applying two rows of fast 2-bit adder cells to five rows in a partial product matrix. As a design example, a 16-bit by 16-bit MAC (Multiply and Accumulate) design is investigated both in a purely logical gate implementation and in a highly customized design. For the partial product reduction, the use of the new 5:3 compression leads to 14.3% speed improvement in terms of XOR gate delay. In a dynamic CMOS circuit implementation using 0.225 m bulk CMOS technology, 11.7% speed improvement is observed with 8.1% less power consumption for the reduction tree.     

Bandwidth Adaptation Algorithms for Adaptive Multimedia Services in Mobile Cellular Networks

The fluctuation of available link bandwidth in mobilecellular networks motivates the study of adaptive multimediaservices, where the bandwidth of an ongoing multimedia call can bedynamically adjusted. We analyze the diverse objectives of theadaptive multimedia framework and propose two bandwidth adaptationalgorithms (BAAs) that can satisfy these objectives. The firstalgorithm, BAA-RA, takes into consideration revenue and``anti-adaptation' where anti-adaptation means that a user feelsuncomfortable whenever the bandwidth of the user's call ischanged. This algorithm achieves near-optimal total revenue withmuch less complexity compared to an optimal BAA. The secondalgorithm, BAA-RF, considers revenue and fairness, and aims at themaximum revenue generation while satisfying the fairnessconstraint defined herein. Comprehensive simulation experimentsshow that the difference of the total revenue of BAA-RA and thatof an optimal BAA is negligible. Also, numerical results revealthat there is a conflicting relationship between anti-adaptationand fairness.     

A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

A new physics-based noise model of a GaAs PHEMT is developed using the characteristic potential method (CPM). The model calculates the intrinsic noise current sources using CPM. Combined with the extrinsic noise parameters extracted from the measured S-parameters, the model reproduces four noise parameters of the device accurately under low drain bias voltages without using any fitting parameters. The model is verified with a 0.2-/spl mu/m GaAs PHEMT and shows excellent agreement with the measurements for all the noise parameters up to a drain voltage of 1 V Also, the proposed method allows the simulation of the microscopic noise distribution and thus allows one to obtain a physical understanding of noise mechanisms inside the device.     

CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-/spl mu/m VCSELs grown by MOCVD

We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-/spl mu/m vertical-cavity surface-emitting laser operating continuous wave up to 35/spl deg/C. The structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In/sub 0.4/Al/sub 0.6/As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.     

Features of the Kinetics of Bulk and Heterogeneous Processes in CHF3 + Ar and C4F8 + Ar Plasma Mixtures

Russian Microelectronics - We carry out a comparative study of the kinetics of plasma-chemical processes and plasma composition in CHF3 + Ar and C4F8 + Ar mixtures under the conditions of a...     

Effect of Ta addition on magnetic properties of (Fe45Pt55)1−x-Tax thin films

It was studied that FePt-Ta thin films prepared on MgO (1 0 0) buffer-layer by DC/RF magnetron co-sputtering have shown better magnetic properties and micro structural improvement. The Ta-doped FePt-Ta films indicate somewhat differences in micro structural ordering and the aspect of grain growth after annealing. With respect to magnetic property, the sample having 30% increased coercivity was obtained after a heat treatment at 700 °C. In particular the addition of Ta (5.5%) enhances the L1₀ ordering of FePt at relatively high temperature (above 500 °C).